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公开(公告)号：US20120112208A1
公开(公告)日：2012-05-10
申请号：US12942289
申请日：2010-11-09
申请人： THOMAS N. ADAM , Stephen W. Bedell , Abhishek Dube , Eric C.T. Harley , Judson R. Holt , Alexander Reznicek , Devendra K. Sadana , Dominic J. Schepis , Matthew W. Stoker , Keith H. Tabakman
发明人： THOMAS N. ADAM , Stephen W. Bedell , Abhishek Dube , Eric C.T. Harley , Judson R. Holt , Alexander Reznicek , Devendra K. Sadana , Dominic J. Schepis , Matthew W. Stoker , Keith H. Tabakman
IPC分类号： H01L29/772 , H01L29/24 , H01L21/336
CPC分类号： H01L29/78 , H01L21/28525 , H01L21/76805 , H01L21/76877 , H01L21/823807 , H01L21/823814 , H01L21/823871 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： An embedded, strained epitaxial semiconductor material, i.e., an embedded stressor element, is formed at the footprint of at least one pre-fabricated field effect transistor that includes at least a patterned gate stack, a source region and a drain region. As a result, the metastability of the embedded, strained epitaxial semiconductor material is preserved and implant and anneal based relaxation mechanisms are avoided since the implants and anneals are performed prior to forming the embedded, strained epitaxial semiconductor material.
摘要翻译： 在至少一个预制的场效应晶体管的覆盖区上形成嵌入的应变外延半导体材料，即嵌入的应力元件，该至少一个预制的场效应晶体管至少包括图案化的栅叠层，源极区和漏极区。 结果，保留嵌入的应变外延半导体材料的亚稳态，并且避免基于植入和退火的松弛机制，因为在形成嵌入的应变外延半导体材料之前执行注入和退火。
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公开(公告)号：US20120146050A1
公开(公告)日：2012-06-14
申请号：US12967323
申请日：2010-12-14
申请人： THOMAS N. ADAM , STEPHEN W. BEDELL , ERIC C. HARLEY , JUDSON R. HOLT , ANITA MADAN , CONAL E. MURRAY , TERESA L. PINTO
发明人： THOMAS N. ADAM , STEPHEN W. BEDELL , ERIC C. HARLEY , JUDSON R. HOLT , ANITA MADAN , CONAL E. MURRAY , TERESA L. PINTO
IPC分类号： H01L29/161 , G01N23/20
CPC分类号： H01L29/1054 , G01N23/207 , G01N2223/607 , G01N2223/6116 , H01L21/823807 , H01L22/12
摘要： A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.
摘要翻译： 在包括半导体器件的衬底上提供的单元结构的周期性阵列上进行通过X射线衍射的晶格间距的直接测量。 每个单位结构包括单晶应变材料区域和至少一个应力产生材料区域。 例如，单晶应变材料区域可以是模拟场效应晶体管的沟道的结构，并且所述至少一个应力产生材料区域可以是与单晶应变材料区域外延对准的单晶半导体区域。 可以在各种处理状态下原位执行直接测量，以提供在实际半导体器件中场效应晶体管中的应变的在线监测。
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公开(公告)号：US20130187205A1
公开(公告)日：2013-07-25
申请号：US13355691
申请日：2012-01-23
IPC分类号： H01L29/772 , H01L21/8238 , H01L21/336
CPC分类号： H01L29/0603 , H01L21/8238 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/092 , H01L29/165 , H01L29/41725 , H01L29/66628 , H01L29/772 , H01L29/78
摘要： Disclosed is a semiconductor article which includes a semiconductor substrate; a gate structure having a spacer adjacent to a conducting material of the gate structure wherein a corner of the spacer is faceted to create a faceted space between the faceted spacer and the semiconductor substrate; and a raised source/drain adjacent to the gate structure, the raised source/drain filling the faceted space and having a surface parallel to the semiconductor substrate. Also disclosed is a method of making the semiconductor article.
摘要翻译： 公开了一种半导体制品，其包括半导体衬底; 栅极结构具有与栅极结构的导电材料相邻的间隔物，其中间隔物的角被刻面以在刻面间隔物和半导体衬底之间产生刻面空间; 以及与栅极结构相邻的升高的源极/漏极，所述升高的源极/漏极填充所述刻面空间并具有平行于所述半导体衬底的表面。 还公开了制造半导体制品的方法。
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公开(公告)号：US20130146952A1
公开(公告)日：2013-06-13
申请号：US13314238
申请日：2011-12-08
IPC分类号： H01L27/088 , H01L21/336 , H01L21/02
CPC分类号： H01L27/1203 , H01L27/0629 , H01L29/94
摘要： A device including a semiconductor on insulator (SOI) substrate including a semiconductor device region and a capacitor device region. A semiconductor device present in the semiconductor device region. The semiconductor device including a gate structure present on a semiconductor on insulator (SOI) layer of the SOI substrate, extension source and drain regions present in the SOI layer on opposing sides of the gate structure, and raised source and drain regions composed of a first portion of an epitaxial semiconductor material on the SOI layer. A capacitor is present in the capacitor device region, said capacitor including a first electrode comprised of a second portion of the epitaxial semiconductor material that has a same composition and crystal structure as the first portion of the epitaxial semiconductor material, a node dielectric layer present on the second portion of the epitaxial semiconductor material, and a second electrode comprised of a conductive material.
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公开(公告)号：US20130193492A1
公开(公告)日：2013-08-01
申请号：US13360823
申请日：2012-01-30
申请人： THOMAS N. ADAM , Kangguo Cheng , Hong He , Ali Khakifirooz , Jinghong Li , Alexander Reznicek
发明人： THOMAS N. ADAM , Kangguo Cheng , Hong He , Ali Khakifirooz , Jinghong Li , Alexander Reznicek
CPC分类号： H01L21/0245 , H01L21/02381 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/0262 , H01L21/823807 , H01L21/823814 , H01L29/66636 , H01L29/7848
摘要： An improved silicon carbon film structure is disclosed. The film structure comprises multiple layers of silicon carbon and silicon. The multiple layers form stress film structures that have increased substitutional carbon content, and serve to induce stresses that improve carrier mobility for certain types of field effect transistors.
摘要翻译： 公开了一种改进的硅碳膜结构。 膜结构包括多层硅碳和硅。 多层形成具有增加的取代碳含量的应力膜结构，并且用于诱导改善某些类型的场效应晶体管的载流子迁移率的应力。
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