公开(公告)号：US20230227997A1

公开(公告)日：2023-07-20

申请号：US18018446

申请日：2021-08-04

Applicant: TOKUYAMA CORPORATION

Inventor： Masayuki FUKUDA ,  Hiroshi FURUYA

IPC: C30B25/18 ,  C30B29/40 ,  C30B33/00 ,  B08B1/00 ,  B08B3/04 ,  H01L21/02

CPC classification number: C30B25/186 ,  B08B1/001 ,  B08B3/04 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02052

Abstract: A method for washing an aluminum nitride single crystal substrate, the aluminum nitride single crystal substrate including: an aluminum-polar face; and a nitrogen-polar face opposite to the aluminum-polar face, the method including: (a) scrubbing a surface of the nitrogen-polar face.

公开(公告)号：US20160168752A1

公开(公告)日：2016-06-16

申请号：US14905559

申请日：2014-07-25

Applicant: TOKUYAMA CORPORATION

Inventor： Hiroshi FURUYA ,  Toshiyuki OBATA

IPC: C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  C30B25/20

CPC classification number: C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  H01L21/02043 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02658

Abstract: Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film.The method includes heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of AlAGaBInCN; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.

Abstract translation: 提供一种用于预处理具有高Al组成比的III族氮化物单晶衬底，用于制造高质量III族氮化物薄膜的方法。 该方法包括在生长第二组III族氮化物单晶层之前，在第一混合气体气氛下，在1000至1250℃的温度范围内加热基底基板不少于5分钟，其中第一混合气体包括 氢气和氮气; 所述基底基板至少在所述基底基板的表面上包括第一III族氮化物单晶层; 第一III族氮化物单晶由AlAGaBInCN的组成式表示; 并且第二III族氮化物单晶的层将在第一III族氮化物单晶的层上生长。