公开(公告)号：US20250011971A1

公开(公告)日：2025-01-09

申请号：US18708259

申请日：2022-12-08

Applicant: TOKUYAMA CORPORATION

Inventor： Masayuki FUKUDA ,  Tatsuya HITOMI ,  Reo YAMAMOTO

IPC: C30B33/00 ,  B24B7/22 ,  B28D5/00 ,  B28D5/04 ,  C30B29/40

Abstract: A method of producing a group III nitride single crystal substrate includes: processing a face of a group III nitride single crystal layer of a layered body, so that the face is parallel to a crystal lattice plane, the layered body including a base substrate, and the group III nitride single crystal layer over the base substrate; after said processing, cutting and separating a group III nitride single crystal in a form of plate from the base substrate or the group III nitride single crystal layer, or cutting and separating the base substrate and the group III nitride single crystal layer on an interface therebetween in a form of plate; and after said cutting and separating, polishing a cut surface of the group III nitride single crystal, the cut surface being formed by said cutting.

公开(公告)号：US20230313413A1

公开(公告)日：2023-10-05

申请号：US18022417

申请日：2022-08-17

Applicant: TOKUYAMA CORPORATION

Inventor： Masayuki FUKUDA ,  Reo YAMAMOTO

IPC: C30B23/02 ,  C30B33/00 ,  B08B3/08 ,  B08B3/12 ,  C11D7/24 ,  C30B29/40 ,  C11D7/30

CPC classification number: C30B33/00 ,  B08B3/08 ,  B08B3/12 ,  C11D7/24 ,  C11D7/30 ,  C30B23/02 ,  C30B29/403

Abstract: Provided are a method of cleaning a group III nitride single crystal substrate which enables the roughness of a nitrogen-polar face of the group III nitride single crystal substrate to be suppressed to remove foreign substances, and a method of producing a group III nitride single crystal substrate. The method of cleaning a group III nitride single crystal substrate having a group III element-polar face, and the nitrogen-polar face opposite the group III element-polar face includes: cleaning the nitrogen-polar face with a detergent including a fluoroorganic compound.

公开(公告)号：US20190093255A1

公开(公告)日：2019-03-28

申请号：US16085322

申请日：2017-03-22

Applicant: TOKUYAMA CORPORATION

Inventor： Toru NAGASHIMA ,  Reiko OKAYAMA ,  Masayuki FUKUDA ,  Hiroyuki YANAGI

IPC: C30B25/20 ,  C30B23/02 ,  C30B29/40 ,  C30B33/08 ,  H01L21/02

Abstract: A method for producing an AlN single crystal substrate, the method including: i) preparing a first base substrate consisting of a first AlN single crystal; ii) growing a first AlN single crystal layer over a main face of the first base substrate, to obtain a layered body; iii) cutting the first MN single crystal layer of the layered body, to separate the layered body into a second base substrate and a first part of the first AlN single crystal layer, the second base substrate including the first base substrate and a thin film layered thereon, the thin film being a second part of the first AlN single crystal layer; iv) polishing a surface of the thin film, to obtain a third base substrate consisting of a second AlN single crystal; and v) growing a second AlN single crystal layer over the polished surface of the third base substrate.

公开(公告)号：US20170330745A1

公开(公告)日：2017-11-16

申请号：US15525502

申请日：2015-11-09

Applicant: TOKUYAMA CORPORATION

Inventor： Toru NAGASHIMA ,  Masayuki FUKUDA

IPC: H01L21/02 ,  C30B29/40

CPC classification number: H01L21/02389 ,  C23C16/34 ,  C23C16/455 ,  C30B25/14 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/205

Abstract: An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.

公开(公告)号：US20230407521A1

公开(公告)日：2023-12-21

申请号：US18450161

申请日：2023-08-15

Applicant: TOKUYAMA CORPORATION

Inventor： Masayuki FUKUDA ,  Toru NAGASHIMA

IPC: C30B29/40 ,  C23C16/02 ,  C23C16/34 ,  C30B25/18 ,  C30B25/20 ,  H01L21/02 ,  H01L33/00

CPC classification number: C30B29/403 ,  C23C16/0209 ,  C23C16/34 ,  C30B25/186 ,  C30B25/20 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02658 ,  H01L33/0075

Abstract: A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (vA−vB)/vB is within the range of ±0.1%, wherein vA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and vB is an average value of peak wave numbers of micro-Raman spectra in the outer region.

公开(公告)号：US20230227997A1

公开(公告)日：2023-07-20

申请号：US18018446

申请日：2021-08-04

Applicant: TOKUYAMA CORPORATION

Inventor： Masayuki FUKUDA ,  Hiroshi FURUYA

IPC: C30B25/18 ,  C30B29/40 ,  C30B33/00 ,  B08B1/00 ,  B08B3/04 ,  H01L21/02

CPC classification number: C30B25/186 ,  B08B1/001 ,  B08B3/04 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02052

Abstract: A method for washing an aluminum nitride single crystal substrate, the aluminum nitride single crystal substrate including: an aluminum-polar face; and a nitrogen-polar face opposite to the aluminum-polar face, the method including: (a) scrubbing a surface of the nitrogen-polar face.

公开(公告)号：US20200299862A1

公开(公告)日：2020-09-24

申请号：US16649382

申请日：2018-09-21

Applicant: TOKUYAMA CORPORATION

Inventor： Masayuki FUKUDA ,  Toru NAGASHIMA

IPC: C30B29/40 ,  C30B25/20 ,  C30B25/18 ,  C23C16/34 ,  C23C16/02 ,  H01L33/00 ,  H01L21/02

Abstract: A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (νA−νB)/νB is within the range of ±0.1%, wherein νA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and νB is an average value of peak wave numbers of micro-Raman spectra in the outer region.

公开(公告)号：US20190287799A1

公开(公告)日：2019-09-19

申请号：US16422221

申请日：2019-05-24

Applicant: TOKUYAMA CORPORATION

Inventor： Toru NAGASHIMA ,  Masayuki FUKUDA

IPC: H01L21/02 ,  C30B25/14 ,  H01L21/205 ,  C23C16/455 ,  C23C16/34 ,  C30B29/40

Abstract: An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.