公开(公告)号：US20160168752A1

公开(公告)日：2016-06-16

申请号：US14905559

申请日：2014-07-25

Applicant: TOKUYAMA CORPORATION

Inventor： Hiroshi FURUYA ,  Toshiyuki OBATA

IPC: C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  C30B25/20

CPC classification number: C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  H01L21/02043 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02658

Abstract: Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film.The method includes heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of AlAGaBInCN; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.

Abstract translation: 提供一种用于预处理具有高Al组成比的III族氮化物单晶衬底，用于制造高质量III族氮化物薄膜的方法。 该方法包括在生长第二组III族氮化物单晶层之前，在第一混合气体气氛下，在1000至1250℃的温度范围内加热基底基板不少于5分钟，其中第一混合气体包括 氢气和氮气; 所述基底基板至少在所述基底基板的表面上包括第一III族氮化物单晶层; 第一III族氮化物单晶由AlAGaBInCN的组成式表示; 并且第二III族氮化物单晶的层将在第一III族氮化物单晶的层上生长。

公开(公告)号：US20160005919A1

公开(公告)日：2016-01-07

申请号：US14765660

申请日：2014-02-02

Applicant: TOKUYAMA CORPORATION

Inventor： Toshiyuki OBATA

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/04 ,  H01L33/145 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/34333

Abstract: A nitride semiconductor deep ultraviolet light emitting device having a superior light emission efficiency is provided. A nitride semiconductor light emitting device having emission wavelength of 200 to 300 nm includes an n-type layer consisting of a single layer or a plurality of layers having different band gaps, a p-type layer consisting of a single layer or a plurality of layers having different band gaps, an active layer arranged between the n-type layer and the p-type layer, and an electron blocking layer having a band gap larger than any band gap of layers composing the active layer and the p-type layer. The p-type layer includes a first p-type layer having a band gap larger than a band gap of a first n-type layer which has a smallest band gap in the n-type layer. The electron blocking layer is arranged between the active layer and the first p-type layer.

Abstract translation: 提供了具有优异的发光效率的氮化物半导体深紫外线发光装置。 发光波长为200〜300nm的氮化物半导体发光元件具有由单层或多层具有不同带隙构成的n型层，由单层或多层构成的p型层 具有不同的带隙，布置在n型层和p型层之间的有源层以及具有比构成有源层和p型层的层的任何带隙大的带隙的电子阻挡层。 p型层包括具有比n型层中具有最小带隙的第一n型层的带隙大的带隙的第一p型层。 电子阻挡层配置在有源层与第一p型层之间。