公开(公告)号：US09253862B2

公开(公告)日：2016-02-02

申请号：US14044659

申请日：2013-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo Hirasawa ,  Osamu Yokoyama ,  Chiaki Yasumuro ,  Toshiaki Fujisato ,  Ryota Yoshida ,  Takashi Sakuma ,  Cheonsoo Han

IPC: H05H1/24 ,  H05F3/00 ,  C23C16/50 ,  C23C14/34 ,  C23C14/50 ,  H01J37/34 ,  H01L21/683 ,  H01J37/32

CPC classification number: H05F3/00 ,  C23C14/34 ,  C23C14/50 ,  C23C16/50 ,  H01J37/32568 ,  H01J37/34 ,  H01L21/6833

Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.

Abstract translation: 在等离子体处理方法中，通过施加第一电压作为施加电压，将物体吸附并保持在静电卡盘上的状态下进行等离子体处理，并且向静电卡盘和静电卡盘之间的间隙供给导热气体 目的。 在等离子体处理完成时，施加电压降低，同时停止供给导热气体并排出残留在静电卡盘与物体之间的导热气体。 在施加电压降低之后，通过将静电卡盘的施加电压设定为零将物体与静电卡盘分离。

公开(公告)号：US10309005B2

公开(公告)日：2019-06-04

申请号：US15032688

申请日：2014-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko Kojima ,  Hiroshi Sone ,  Atsushi Gomi ,  Kanto Nakamura ,  Toru Kitada ,  Yasunobu Suzuki ,  Yusuke Suzuki ,  Koichi Takatsuki ,  Tatsuo Hirasawa ,  Keisuke Sato ,  Chiaki Yasumuro ,  Atsushi Shimada

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/16 ,  C23C14/08 ,  C23C14/00 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

公开(公告)号：US09406557B2

公开(公告)日：2016-08-02

申请号：US14316251

申请日：2014-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Osamu Yokoyama ,  Cheonsoo Han ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Tatsuo Hirasawa ,  Tadahiro Ishizaka ,  Kenji Suzuki

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/288

CPC classification number: H01L21/76877 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76867 ,  H01L21/76876 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.

Abstract translation: 提供了在形成在基板表面上的绝缘膜中形成为具有预定图案的凹部中形成铜（Cu）布线的方法。 所述方法包括：至少在所述凹部的表面上形成阻挡膜，所述阻挡膜用作阻挡Cu的扩散的阻挡层; 通过化学机械沉积（CVD）在阻挡膜上形成Ru膜; 通过物理气相沉积（PVD）在Ru膜上形成Cu合金膜以埋藏凹槽; 使用埋在凹部中的Cu合金膜形成Cu布线; 并在Cu布线上形成电介质膜。