公开(公告)号：US20240186115A1

公开(公告)日：2024-06-06

申请号：US18515129

申请日：2023-11-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi KANEKO ,  Satoru Kawakami ,  Eiki Kamata

IPC: H01J37/32

CPC classification number: H01J37/32247 ,  H01J37/32238

Abstract: A plasma processing apparatus comprises a processing chamber accommodating a substrate, and defining a processing space by an upper wall, a side wall, and a lower wall, a microwave generator configured to generate a microwave for generating plasma, a plurality of microwave radiators provided above the upper wall, and configured to radiate the microwave toward the processing chamber, a plurality of microwave transmission windows provided at positions corresponding to the plurality of microwave radiators in the upper wall, and formed of a dielectric, and a plurality of resonator array structures disposed on lower surfaces of the plurality of microwave transmission windows, respectively. The resonator array structures are formed by arranging a plurality of resonators that are capable of resonance with a magnetic field component of the microwave and are smaller in size than a wavelength of the microwave.

公开(公告)号：US11842886B2

公开(公告)日：2023-12-12

申请号：US17063260

申请日：2020-10-05

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Hirokazu Ueda ,  Eiki Kamata ,  Mitsutoshi Ashida ,  Isao Gunji

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32266 ,  B08B7/0035 ,  H01J37/3244 ,  H01J2237/335

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

公开(公告)号：US11887825B2

公开(公告)日：2024-01-30

申请号：US17076463

申请日：2020-10-21

Applicant: Tokyo Electron Limited

Inventor： Mikio Sato ,  Eiki Kamata ,  Taro Ikeda

IPC: H01L21/26 ,  H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/52 ,  H01L21/66

CPC classification number: H01J37/32972 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3222 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of controlling a scanning-type plasma processing apparatus using a phased array antenna, includes observing light emission of plasma generated inside a processing container through observation windows provided at multiple positions in the processing container, calculating an in-plane distribution of values representing characteristics of the plasma on a substrate, based on data on the observed light emission of the plasma, and correcting a scanning pattern and/or a plasma density distribution of the plasma based on the calculated in-plane distribution of the values representing the characteristics of the plasma on the substrate.

公开(公告)号：US11600475B2

公开(公告)日：2023-03-07

申请号：US16942145

申请日：2020-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Mikio Sato ,  Eiki Kamata

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

公开(公告)号：US11164730B2

公开(公告)日：2021-11-02

申请号：US16122226

申请日：2018-09-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Tomohito Komatsu ,  Yuki Osada ,  Hiroyuki Miyashita ,  Susumu Saito ,  Kazuhiro Furuki ,  Mikio Sato ,  Eiki Kamata

IPC: H01J37/32

Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

公开(公告)号：US20240186114A1

公开(公告)日：2024-06-06

申请号：US18515120

申请日：2023-11-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi KANEKO ,  Satoru Kawakami ,  Hiroshi Kondo ,  Eiki Kamata ,  Shin Oowada

IPC: H01J37/32

CPC classification number: H01J37/32247 ,  H01J37/3222 ,  H01J37/32449

Abstract: Provided is a plasma processing apparatus comprising a processing container configured to provide a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied to the processing space; a dielectric provided with a first surface thereof facing the processing space; an electromagnetic wave supply portion configured to supply the electromagnetic waves to the processing space through the dielectric; and a resonator array structure located along the first surface of the dielectric within the processing container, wherein the resonator array structure includes a base plate having a groove on a surface on the processing space side; a plurality of resonators capable of resonating with a magnetic field component of the electromagnetic wave and having a size smaller than a wavelength of the electromagnetic wave; and a pressing member configured to press the plurality of resonators.

公开(公告)号：US11967485B2

公开(公告)日：2024-04-23

申请号：US17083709

申请日：2020-10-29

Applicant: Tokyo Electron Limited

Inventor： Eiki Kamata ,  Taro Ikeda ,  Mikio Sato ,  Nobuhiko Yamamoto

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3222 ,  H01J37/32238 ,  H05H1/46

Abstract: There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

公开(公告)号：US11721528B2

公开(公告)日：2023-08-08

申请号：US17010035

申请日：2020-09-02

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Mikio Sato ,  Eiki Kamata

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32174 ,  H01J37/32559 ,  H01J37/32935

Abstract: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.

公开(公告)号：US12165846B2

公开(公告)日：2024-12-10

申请号：US17411992

申请日：2021-08-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki Kamata ,  Taro Ikeda ,  Haruhiko Furuya

IPC: H01J37/32 ,  C23C16/455

Abstract: There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.

公开(公告)号：US20240312767A1

公开(公告)日：2024-09-19

申请号：US18592336

申请日：2024-02-29

Applicant: Tokyo Electron Limited

Inventor： Taro HAYAKAWA ,  Taro Ikeda ,  Eiki Kamata

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32229 ,  H01J2237/327

Abstract: A plasma processing apparatus comprises a processing chamber having an upper opening, a dielectric ceiling plate that is disposed to close the opening and partitions an inner space and an outer space of the processing chamber, and a plurality of electromagnetic wave supplies disposed on the dielectric ceiling plate and configured to supply electromagnetic waves into the processing chamber. The dielectric ceiling plate has a cavity between the plurality of electromagnetic wave supplies. The cavity is formed in a surface of the dielectric ceiling plate in contact with the outer space or formed inside the dielectric ceiling plate.