公开(公告)号：US11205577B2

公开(公告)日：2021-12-21

申请号：US15905213

申请日：2018-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hikaru Watanabe ,  Akihiro Tsuji

IPC: H01L21/311 ,  H01L21/768

Abstract: An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas.

公开(公告)号：US20200211854A1

公开(公告)日：2020-07-02

申请号：US16069723

申请日：2017-05-02

Applicant: Tokyo Electron Limited

Inventor： Hikaru Watanabe ,  Ryosuke Ebihara

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306 ,  H01L21/3213

Abstract: An etching method of etching a silicon nitride region with high selectivity is provided. In the etching method, a processing target object, having a silicon nitride region and a silicon-containing region having a composition different from the silicon nitride region, is accommodated in a processing vessel, and the silicon nitride region is selectively etched. In a first process, a deposit containing hydrofluorocarbon is formed on the silicon nitride region and the silicon-containing region by generating plasma of a processing gas containing a hydrofluorocarbon gas within the processing vessel. In a second process, the silicon nitride region is etched by radicals of the hydrofluorocarbon contained in the deposit. The first process and the second process are repeated alternately.

公开(公告)号：US10580655B2

公开(公告)日：2020-03-03

申请号：US16112435

申请日：2018-08-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hikaru Watanabe ,  Akihiro Tsuji

IPC: H01L21/3065 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/311

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

公开(公告)号：US12230505B2

公开(公告)日：2025-02-18

申请号：US17677752

申请日：2022-02-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro Tsuji ,  Masanobu Honda ,  Hikaru Watanabe

IPC: H01L21/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/67 ,  H01L21/683

Abstract: An apparatus which selectively etches a first region with respect to a second region made of a material different from that of the first region. The apparatus is controlled to perform a first step for generating, in a processing container housing a workpiece to be treated, a plasma of a treatment gas from a gas supply including a fluorocarbon gas, an oxygen-containing gas, and an inert gas, and forming a deposit including fluorocarbon on the object to be treated, and a second step for etching the first region with radicals of the fluorocarbon included in the deposit. The apparatus is also controlled to perform the first step and the second step repeatedly.

公开(公告)号：US11107692B2

公开(公告)日：2021-08-31

申请号：US16069723

申请日：2017-05-02

Applicant: Tokyo Electron Limited

Inventor： Hikaru Watanabe ,  Ryosuke Ebihara

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching method of etching a silicon nitride region with high selectivity is provided. In the etching method, a processing target object, having a silicon nitride region and a silicon-containing region having a composition different from the silicon nitride region, is accommodated in a processing vessel, and the silicon nitride region is selectively etched. In a first process, a deposit containing hydrofluorocarbon is formed on the silicon nitride region and the silicon-containing region by generating plasma of a processing gas containing a hydrofluorocarbon gas within the processing vessel. In a second process, the silicon nitride region is etched by radicals of the hydrofluorocarbon contained in the deposit. The first process and the second process are repeated alternately.

公开(公告)号：US10109495B2

公开(公告)日：2018-10-23

申请号：US14995552

申请日：2016-01-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hikaru Watanabe ,  Akihiro Tsuji

IPC: H01L21/311 ,  H01L21/768

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

公开(公告)号：US09852922B2

公开(公告)日：2017-12-26

申请号：US15283703

申请日：2016-10-03

Applicant: Tokyo Electron Limited

Inventor： Hikaru Watanabe ,  Masanobu Honda

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/31116 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76877

Abstract: A plasma etching method includes: mounting a target substrate on a first electrode which is provided to be parallel with a second electrode with a preset gap within a processing chamber, a base material of the second electrode containing silicon or SiC; generating plasma of a fluorocarbon-based etching gas in a processing space; applying a low frequency AC power or a high frequency AC power having a frequency, which an ion in the plasma is allowed to follow, to the second electrode; and increasing an effective voltage value of the AC power to enhance sputtering at the second electrode such that silicon sputtered from the base material reacts with fluorine radicals generated from the fluorocarbon-based etching gas to produce a reaction product of SiF4, to irradiate electrons generated near the second electrode to the target substrate and to increase a plasma potential near a sidewall of the processing chamber.

公开(公告)号：US09257301B2

公开(公告)日：2016-02-09

申请号：US14462658

申请日：2014-08-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro Ogasawara ,  Masafumi Urakawa ,  Yoshinobu Hayakawa ,  Kazuhiro Kubota ,  Hikaru Watanabe

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/31144 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/76802

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Abstract translation: 提供了蚀刻氧化硅膜的方法。 该方法包括将包括氧化硅膜的工件和形成在氧化硅膜上的掩模暴露于处理气体的等离子体以蚀刻氧化硅膜。 掩模包括形成在氧化硅膜上的第一膜和形成在第一膜上的第二膜，并且第二膜由相对于等离子体中的活性种类具有比第一膜低的蚀刻速率的膜构成 。

公开(公告)号：US11264246B2

公开(公告)日：2022-03-01

申请号：US16750530

申请日：2020-01-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hikaru Watanabe ,  Akihiro Tsuji

IPC: H01L21/3065 ,  H01L21/768 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/311

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

公开(公告)号：US20160211148A1

公开(公告)日：2016-07-21

申请号：US14995269

申请日：2016-01-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hikaru Watanabe ,  Akihiro Tsuji

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/0212 ,  H01L21/02274

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride. The target object includes the second region, the first region and a mask. The etching method includes a first sequence and a second sequence. Each of sequence includes, a first step of generating a plasma of a processing gas containing a fluorocarbon gas in a processing chamber where the target object is accommodated and forming a deposit containing fluorocarbon on the target object, and a second step of etching the first region by radicals of fluorocarbon contained in the deposit. The first sequence is performed during a period including time when the second region is exposed, and an etching amount of the first region in the first sequence is smaller than an etching amount of the first region in the second sequence.

Abstract translation: 提供蚀刻方法，用于相对于氮化硅的第二区域选择性地蚀刻氧化硅的第一区域。 目标对象包括第二区域，第一区域和掩模。 蚀刻方法包括第一序列和第二序列。 每个序列包括在容纳目标物体的处理室中产生含有碳氟化合物气体的处理气体的等离子体的第一步骤，并且在目标物体上形成含有碳氟化合物的沉积物，以及蚀刻第一区域 通过沉积物中含有的碳氟化合物。 第一序列在包括第二区域暴露的时间的期间进行，第一序列中的第一区域的蚀刻量小于第二区域的蚀刻量。