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    Method of manufacturing a semiconductor device
    1.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US09318340B2

    公开(公告)日：2016-04-19

    申请号：US14353451

    申请日：2012-10-25

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Takayuki Katsunuma ,  Masanobu Honda ,  Kazuhiro Kubota ,  Hironobu Ichikawa

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/768

    CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/6833 ,  H01L21/76811 ,  H01L21/76813

    Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

    Abstract translation: 一种制造半导体器件的方法，该半导体器件包括使用等离子体蚀刻装置的晶片，该等离子体蚀刻装置包括：室，设置在该腔室中的卡盘，以设置待处理的晶片;设置在卡盘的周缘部分的聚焦环， 气体供给机构，被配置为根据晶片的径向位置供应各种类型的气体。 该方法包括：将形成有有机膜的晶片放置在卡盘上; 引入蚀刻气体，其将晶片上的有机膜从处理气体供给机构蚀刻到晶片的中心部分; 将具有与蚀刻气体反应的性质的蚀刻抑制因子气体从气体供给机构引入到晶片的周缘部; 并使用蚀刻气体在晶片上进行等离子体蚀刻。

    Method of etching silicon oxide film
    2.
    发明授权
    Method of etching silicon oxide film 有权
    蚀刻氧化硅膜的方法

    公开(公告)号：US09257301B2

    公开(公告)日：2016-02-09

    申请号：US14462658

    申请日：2014-08-19

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Masahiro Ogasawara ,  Masafumi Urakawa ,  Yoshinobu Hayakawa ,  Kazuhiro Kubota ,  Hikaru Watanabe

    IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01J37/32

    CPC classification number: H01L21/31144 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/76802

    Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

    Abstract translation: 提供了蚀刻氧化硅膜的方法。 该方法包括将包括氧化硅膜的工件和形成在氧化硅膜上的掩模暴露于处理气体的等离子体以蚀刻氧化硅膜。 掩模包括形成在氧化硅膜上的第一膜和形成在第一膜上的第二膜，并且第二膜由相对于等离子体中的活性种类具有比第一膜低的蚀刻速率的膜构成 。

    Plasma processing apparatus and plasma processing method
    3.
    发明授权
    Plasma processing apparatus and plasma processing method 有权

    公开(公告)号：US10886097B2

    公开(公告)日：2021-01-05

    申请号：US15121075

    申请日：2015-02-20

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kazuhiro Kubota ,  Masanobu Honda

    IPC: C23C16/00 ,  H01L21/326 ,  H01J37/05 ,  H01J37/32 ,  H01L21/311

    Abstract: Disclosed is a plasma processing apparatus including a processing container, an ion trapping member partitioning the inside of the processing container into a processing space and a non-processing space and transmitting radicals and trap ions, a placing table, a first gas supply unit supplying a first processing gas into the non-processing space, a second gas supply unit supplying a second processing gas into the processing space, a first high frequency power supply supplying a high frequency power to generate radicals and ions in the non-processing space, a second high frequency power supply supplying a high frequency power to generate radicals and ions in the processing space, and a third high frequency power supply supplying a high frequency power of a lower frequency than that of the high frequency power supplied from the second high frequency power supply to draw the ions generated in the processing space into the workpiece.

    ETCHING METHOD AND ETCHING APPARATUS
    6.
    发明申请
    ETCHING METHOD AND ETCHING APPARATUS 有权
    蚀刻方法和蚀刻装置

    公开(公告)号：US20150140821A1

    公开(公告)日：2015-05-21

    申请号：US14402780

    申请日：2013-06-24

    Applicant: Tokyo Electron Limited

    Inventor： Kazuhiro Kubota

    IPC: H01L21/4757 ,  H01L21/768 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

    CPC classification number: H01L21/47573 ,  H01J37/32091 ,  H01J37/32431 ,  H01J2237/334 ,  H01L21/0262 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/76802

    Abstract: An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (CF) based gas into a processing chamber, generating a plasma from the etching gas, and etching a silicon oxide film through a polysilicon mask using the plasma. The polysilicon film has a predetermined pattern and is arranged on the silicon oxide film. The silicon oxide film has at least one of a silicon content per unit volume, a fluorine content per unit volume, and a volume density that varies in a depth direction.

    Abstract translation: 提供一种蚀刻方法，其包括以下步骤：将含有氟碳（CF）的气体的蚀刻气体供应到处理室中，从蚀刻气体产生等离子体，并使用等离子体通过多晶硅掩模蚀刻氧化硅膜。 多晶硅膜具有预定的图案并且布置在氧化硅膜上。 氧化硅膜具有每单位体积的硅含量，每单位体积的氟含量和在深度方向上变化的体积密度中的至少一种。

    PLASMA ETCHING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    8.
    发明申请
    PLASMA ETCHING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    等离子体蚀刻方法和半导体器件制造方法

    公开(公告)号：US20140234992A1

    公开(公告)日：2014-08-21

    申请号：US14346986

    申请日：2012-09-25

    Applicant: Tokyo Electron Limited

    Inventor： Kazuhiro Kubota ,  Masanobu Honda ,  Takayuki Katsunuma

    IPC: H01L21/66 ,  H01L21/768

    CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76877 ,  H01L22/26 ,  H01L2221/1015 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.

    Abstract translation: 提供了一种等离子体蚀刻方法，用于在包括用于调节向衬底提供蚀刻气体的供应条件的供应条件调节单元的蚀刻装置内蚀刻对应于蚀刻对象的衬底，温度调节单元，用于调节衬底的温度 放置在沿径向的台面上，以及等离子体产生单元，用于在供应条件调节单元和台之间的空间内产生等离子体。 等离子体蚀刻方法包括：控制步骤，其中温度调节单元控制衬底的温度在衬底的衬底平面内均匀;以及调节步骤，其中供应条件调节单元调节所含活性物质的浓度分布 在等离子体产生单元产生的等离子体中，在衬底上方的空间内。

    Etching method and etching apparatus
    10.
    发明授权
    Etching method and etching apparatus 有权
    蚀刻方法和蚀刻装置

    公开(公告)号：US09396968B2

    公开(公告)日：2016-07-19

    申请号：US14402780

    申请日：2013-06-24

    Applicant: Tokyo Electron Limited

    Inventor： Kazuhiro Kubota

    IPC: H01L21/4757 ,  H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/768

    CPC classification number: H01L21/47573 ,  H01J37/32091 ,  H01J37/32431 ,  H01J2237/334 ,  H01L21/0262 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/76802

    Abstract: An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (CF) based gas into a processing chamber, generating a plasma from the etching gas, and etching a silicon oxide film through a polysilicon mask using the plasma. The polysilicon film has a predetermined pattern and is arranged on the silicon oxide film. The silicon oxide film has at least one of a silicon content per unit volume, a fluorine content per unit volume, and a volume density that varies in a depth direction.

    Abstract translation: 提供一种蚀刻方法，其包括以下步骤：将含有氟碳（CF）的气体的蚀刻气体供应到处理室中，从蚀刻气体产生等离子体，并使用等离子体通过多晶硅掩模蚀刻氧化硅膜。 多晶硅膜具有预定的图案并且布置在氧化硅膜上。 氧化硅膜具有每单位体积的硅含量，每单位体积的氟含量和在深度方向上变化的体积密度中的至少一种。

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