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公开(公告)号：US20030205196A1
公开(公告)日：2003-11-06
申请号：US09820748
申请日：2001-03-30
发明人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano
IPC分类号： B05D003/12
CPC分类号： H01L21/6715 , B05D1/005 , B05D3/02 , G03F7/162 , G03F7/3021
摘要： A spin chuck on which a wafer is mounted is divided into a plurality of regions concentrically in a radial direction, and different temperatures are set for each of the regions so that the temperature gradually increases from the outer periphery to the center. The wafer is placed on this spin chuck, and a processing solution is applied to the wafer and spread over the wafer by centrifugal force, whereby the vaporization of a solvent of the processing solution which is spread on the outer periphery of the wafer is suppressed, and hence the timing of drying of the processing solution within the surface of the wafer can be made uniform. Consequently, a coating film with a uniform thickness within the wafer surface can be obtained.
摘要翻译： 其上安装有晶片的旋转卡盘在径向上同心地分成多个区域，并且为每个区域设定不同的温度，使得温度从外周逐渐增加到中心。 将晶片放置在该旋转卡盘上，并且将处理溶液施加到晶片并通过离心力分散在晶片上，从而抑制了扩散在晶片外周上的处理溶液的溶剂蒸发， 因此可以使晶片表面内的处理液的干燥时间一致。 因此，可以获得在晶片表面内具有均匀厚度的涂膜。
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公开(公告)号：US20030094137A1
公开(公告)日：2003-05-22
申请号：US10300760
申请日：2002-11-21
发明人： Hidefumi Matsui , Junichi Kitano
IPC分类号： B05D003/10 , B05D003/04 , B05D003/02 , C23C016/00
CPC分类号： H01L21/67178 , H01L21/67748 , H01L21/67751
摘要： The wafer coated with the resist is deliberately placed in the vapor before being transferred to an aligner that exposes the resist on the wafer, the vapor, for example, the moisture, uniformly adheres onto the resist on the wafer. As a result, the substrate can uniformly be exposed in the following exposing process, and the uniformity of the line width and the like can be improved.
摘要翻译： 涂覆有抗蚀剂的晶片被有意地放置在蒸气中，然后被转移到将晶片上的抗蚀剂暴露的对准器，例如水分的蒸气均匀地粘附在晶片上的抗蚀剂上。 结果，可以在随后的曝光工序中均匀地曝光基板，能够提高线宽等的均匀性。
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公开(公告)号：US20040050321A1
公开(公告)日：2004-03-18
申请号：US10649780
申请日：2003-08-28
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
IPC分类号： B05C005/00 , B05B007/00 , B05B015/04 , B05C011/00
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译： 在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。 在各个区域的底部设置用于各区域的排气的排气管。 通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供应区域供应到各个区域中并且从排气管排出各个区域中的气氛，将各个区域中的气氛保持在清洁状态。
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公开(公告)号：US20010025431A1
公开(公告)日：2001-10-04
申请号：US09819865
申请日：2001-03-29
发明人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano
IPC分类号： F26B005/04 , B05D003/00 , F26B021/06 , B05D003/02
CPC分类号： H01L21/67248
摘要： A controller controls the temperature of a hot plate and the degree of vacuum in a tightly closed space to a temperature and a pressure at levels at which a thinner contained in a resist applied to a wafer volatilizes and an acid generator, a quencher, and a polymer chain protecting group practically remain in the resist, for example, during heat processing. More specifically, the controller controls the temperature of the hot plate and the degree of vacuum in the tightly closed space to bring the temperature of the hot plate to about 40null C., and the degree of vacuum in the tightly closed space to approximately 5 Torr. Thereby, the heat processing can be performed for the wafer so that the acid generator is uniformly dispersed in the resist, or the quencher is uniformly formed on the front face of the resist without breakage of the polymer chain protecting group.
摘要翻译： 控制器将热板的温度和紧密封闭的空间中的真空度控制在施加到晶片上的抗蚀剂中含有的薄膜的温度和压力波动，酸产生剂，猝灭剂和 聚合物链保护基实际上保留在抗蚀剂中，例如在热处理期间。 更具体地，控制器控制热板的温度和紧密封闭的空间中的真空度，使热板的温度达到约40℃，并且紧密封闭空间中的真空度约为5 托尔 因此，可以对晶片进行热处理，使得酸发生剂均匀地分散在抗蚀剂中，或者猝灭剂均匀地形成在抗蚀剂的正面上而不会破坏聚合物链保护基。
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公开(公告)号：US20010021486A1
公开(公告)日：2001-09-13
申请号：US09799562
申请日：2001-03-07
发明人： Junichi Kitano
IPC分类号： G03F007/00 , B08B005/00
CPC分类号： H01L21/02046 , B08B7/0057 , G03F7/085 , G03F7/16 , H01L21/67028 , Y10S134/902
摘要： A closed container composed of a lid body and a lower container are provided in a cover body, and a supply pipe for nitrogen gas is connected to the cover body. A light source unit including UV lamps in the lid body is provided to face a mounting table in the closed container, and a gas supply path for HMDS gas is provided on the outer side from the light source unit. The inside of the cover body is first brought to a nitrogen atmosphere, a wafer is irradiated with ultraviolet rays with the lid body of the closed container opened to perform cleaning. Subsequently, the lid body is closed and the HMDS gas is introduced into the closed container to perform hydrophobic processing for the wafer. This removes deposits such as organic substances adhering to the wafer W through the irradiation with the ultraviolet rays, thereby improving coating properties of a resist solution.
摘要翻译： 由盖体和下容器构成的密闭容器设置在盖体内，氮气供给管与盖体连接。 在盖体内设置包括紫外灯的光源单元，以与封闭容器内的安装台相对，并且在从光源单元的外侧设置用于HMDS气体的气体供给路径。 首先将盖体的内部带入氮气氛，在密封容器的盖体开放的状态下用紫外线照射晶片进行清洗。 随后，关闭盖体，并将HMDS气体引入密封容器中以对晶片进行疏水处理。 通过紫外线的照射来除去附着在晶片W上的有机物质等沉积物，提高抗蚀剂溶液的涂布性。
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公开(公告)号：US20030119333A1
公开(公告)日：2003-06-26
申请号：US10354079
申请日：2003-01-30
IPC分类号： H01L021/31
CPC分类号： G03F7/168
摘要： The present invention relates to a method for performing coating and developing treatment for a substrate, which comprises the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, and further comprises the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the; exposure processing for the substrate. According to the present invention, the treatment gas is supplied to form the treatment film on the surface of the coating film after the step of forming the coating film and before the step of exposing the substrate, whereby the substrate can be protected from impurities such as oxygen and water vapor in an atmosphere by this treatment film.
摘要翻译： 本发明涉及对基材进行涂布和显影处理的方法，其特征在于包括以下步骤：向所述基材供给涂布溶液以在所述基材上形成涂膜; 对其上形成有涂膜的基板进行热处理; 热处理后冷却基板; 对形成在基板上的涂膜进行曝光处理; 并且在曝光处理之后显影衬底，并且还包括在形成涂膜的步骤之后和在执行步骤之前，在涂膜的表面上提供处理气体以形成处理膜的步骤; 底物的曝光处理。 根据本发明，在形成涂膜的步骤之后和暴露基板的步骤之前，供给处理气体以在涂膜的表面上形成处理膜，从而可以保护基板免受杂质如 通过该处理膜在大气中的氧气和水蒸汽。
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7.发明申请Evaluating method of hydrophobic process, forming method of resist pattern, and forming system of resist pattern 失效疏水工艺的评价方法，抗蚀剂图案的形成方法和抗蚀剂图案的成型体系公开(公告)号：US20020009592A1
公开(公告)日：2002-01-24
申请号：US09827095
申请日：2001-04-06
发明人： Junichi Kitano , Keiko Hada , Yuko Ono , Takayuki Katano , Hidefumi Matsui
IPC分类号： G03C005/00 , G01N027/26 , B32B005/16 , B32B009/00 , B32B021/02
CPC分类号： G03F7/16 , Y10T428/2995
摘要： A HMDS gas is supplied to a surface of a wafer W to perform a hydrophobic process, thereafter the wafer W is contained in an airtight container on a cassette stage, and is transferred to an analyzer provided at an external portion of a resist pattern forming apparatus. The analyzer performs mass spectrometry of the quantity of an ionic species such as CH9Sinull, C3H9Sinull, C3H9Osinull and the like on the surface of the wafer W using an analyzing section, for example, TOF-SIMS, whereby measuring a HMDS quantity (hexamethyldisilazane) on the surface of the wafer W. This method makes it possible to measure the HMDS quantity on the surface of the wafer W and to evaluate a hydrophobic process state with high reliability.
摘要翻译： 向晶片W的表面供给HMDS气体进行疏水性处理，然后将晶片W装入盒台的密闭容器中，并转移到设置在抗蚀剂图案形成装置的外部的分析装置 。 分析仪使用分析部分（例如TOF-SIMS）在晶片W的表面上进行CH9Si +，C3H9Si +，C3H9Oi等离子物质的量的质谱分析，由此测量HMDS量（六甲基二硅氮烷） 在晶片W的表面上。这种方法使得可以测量晶片W的表面上的HMDS量并且以高可靠性评估疏水处理状态。
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公开(公告)号：US20020000193A1
公开(公告)日：2002-01-03
申请号：US09820938
申请日：2001-03-30
发明人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano , Hiroyuki Hara
IPC分类号： B05C005/00
CPC分类号： H01L21/6715
摘要： In a coating apparatus for supplying a mixed solution of a resist solution and a thinner onto a wafer from a nozzle, the nozzle is connected to a mixed solution supply pipe, and the resist solution and the thinner are supplied to the mixed solution supply pipe from a resist solution supply pipe and a thinner supply pipe respectively through a junction pipe. The diameter of the junction pipe is set smaller than those of other supply pipes, whereby the resist solution and the thinner can be mixed efficiently in the junction pipe, and as a result the wafer is coated with the mixed solution so that a uniform film thickness can be obtained within the surface of the wafer.
摘要翻译： 在从喷嘴向晶片供给抗蚀剂溶液和稀释剂的混合溶液的涂布装置中，喷嘴连接到混合溶液供给管，并且将抗蚀剂溶液和稀释剂从混合溶液供给管供给到 分别通过连接管的抗蚀剂溶液供给管和更薄的供给管。 连接管的直径设定为小于其他供给管的直径，由此能够在接合管中有效地混合抗蚀剂溶液和稀释剂，结果，将晶片涂布在混合溶液中，使得均匀的膜厚 可以在晶片的表面内获得。
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公开(公告)号：US20010014372A1
公开(公告)日：2001-08-16
申请号：US09737473
申请日：2000-12-18
发明人： Takayuki Katano , Hidefumi Matsui , Junichi Kitano , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura
IPC分类号： B05D003/00 , B05C013/00
CPC分类号： H01L21/67178 , B05C11/08 , H01L21/67248 , H01L21/67742 , H01L21/67748 , H01L21/67754
摘要： A developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device. The temperature of an area to where the wafer is transferred is detected by a temperature/humidity detector and the temperature of the wafer which is cooled by the cooling plates is adjusted accordingly based on a detected value so that the temperature of the wafer when transferred to the coating unit becomes a coating temperature of a processing solution. Thereby, the wafer is transferred to the coating unit while maintaining its temperature with high accuracy to be coated with a resist solution, so that a formation of an uneven processing due to the temperature change can be prevented and a uniform processing can be performed.
摘要翻译： 显影单元，涂布单元和多个冷却板布置在执行抗蚀剂涂层等的处理站中，并且通过基板传送装置在晶片之间转印晶片。 通过温度/湿度检测器检测晶片转移到的区域的温度，并且基于检测值相应地调节由冷却板冷却的晶片的温度，使得晶片转移到 涂布单元成为处理溶液的涂布温度。 由此，将晶片转印到涂布单元，同时高精度地保持其温度以涂覆抗蚀剂溶液，从而可以防止由温度变化引起的不均匀处理的形成，并且可以进行均匀的处理。
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公开(公告)号：US20030079687A1
公开(公告)日：2003-05-01
申请号：US10309273
申请日：2002-12-04
IPC分类号： C23C016/00
CPC分类号： G03F7/168
摘要： The present invention relates to a method for performing coating and developing treatment for a substrate, which comprises the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, and further comprises the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the exposure processing for the substrate. According to the present invention, the treatment gas is supplied to form the treatment film on the surface of the coating film after the step of forming the coating film and before the step of exposing the substrate, whereby the substrate can be protected from impurities such as oxygen and water vapor in an atmosphere by this treatment film.
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