公开(公告)号：US20200312695A1

公开(公告)日：2020-10-01

申请号：US16830879

申请日：2020-03-26

Applicant: Tokyo Electron Limited

Inventor： Toru TAKAHASHI ,  Hiroshi TSUJIMOTO ,  Nobuaki SHINDO ,  Shigeru YONEDA

IPC: H01L21/683 ,  H01L21/66 ,  H01J37/32

Abstract: A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.

公开(公告)号：US20150000843A1

公开(公告)日：2015-01-01

申请号：US14489125

申请日：2014-09-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Noriyuki KOBAYASHI ,  Shigeru YONEDA ,  Kenichi HANAWA ,  Shigeru TAHARA ,  Masaru SUGIMOTO

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32174 ,  H01J2237/334 ,  H01J2237/3346 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76834

Abstract: A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.

Abstract translation: 等离子体蚀刻装置包括第一RF电源单元，被配置为将第一RF电力施加到等离子体产生的第一电极或第二电极，所述第一电极或第二电极彼此相对设置在被构造为被真空排出的处理容器中;第二RF电源 被配置为向第二电极施加用于离子吸引的第二RF功率的单元，以及被配置为控制第二RF电源单元的控制器。 第二RF电源单元包括第二RF电源和第二匹配单元。 控制器被预置为控制第二RF电源单元以在第一功率和第二功率之间的预定周期中执行功率调制的功率调制模式操作，同时控制第二匹配单元以与第一功率和第二功率同步地切换匹配操作 功率调制

公开(公告)号：US20210233793A1

公开(公告)日：2021-07-29

申请号：US17156068

申请日：2021-01-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasutaka HAMA ,  Nobuaki SHINDO ,  Shigeru YONEDA

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

Abstract: A method of processing a substrate includes: (a) placing the substrate on an electrostatic chuck, and applying a direct current voltage to the electrostatic chuck to hold the substrate on the electrostatic chuck; (b) supplying a radio frequency power to an electrode to generate plasma of an inert gas; (c) stopping the application of the direct current voltage to the electrostatic chuck; and (d) gradually decreasing the radio frequency power supplied to the electrode to 0 W.