Resist composition and method of forming resist pattern

    公开(公告)号:US11644751B2

    公开(公告)日:2023-05-09

    申请号:US17114941

    申请日:2020-12-08

    Abstract: A resist composition that generates an acid upon exposure is soluble in a developing solution, and is changed by action of an acid. The resist composition contains a resin component having solubility in a developing solution, which is changed by action of an acid, and has a constitutional unit represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a single bond or a linking group; Ax represents a sulfonyl group or a sulfoxide group; and Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group. In General Formula (a02-1), W represents a polymerizable group-containing group, Wax0 represents a cyclic group having an (nax0+1)-valent aromaticity, which may have a substituent, Wax0 may form a condensed ring with W, and nax0 represents an integer of 1 to 3

    RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

    公开(公告)号:US20240248403A1

    公开(公告)日:2024-07-25

    申请号:US18563358

    申请日:2022-06-06

    Abstract: A resist composition including a resin component (A1) which has a constitutional unit (a0) containing a photodegradable base that is decomposed upon light exposure and loses acid diffusion controllability, and an acid generator component (B) which contains a compound (BO) represented by General Formula (b0) in which X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, where 1≤nb1+nb2≤5 is satisfied, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater

    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND

    公开(公告)号:US20200174365A1

    公开(公告)日:2020-06-04

    申请号:US16700780

    申请日:2019-12-02

    Abstract: A resist composition containing a base material component of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, Rbd1 to Rbd3 each independently represent an aryl group which may have a substituent, provided that one or more of Rbd1 to Rbd3 are aryl groups having a fluorinated alkyl group which may have a substituent, and at least one of the fluorinated alkyl groups which may have a substituent in these aryl groups is bonded to a carbon atom adjacent to a carbon atom that is bonded to a sulfur atom in the formula, and a total number of the fluorinated alkyl groups which may have a substituent is 2 or more; X− represents a counter anion.

    Resist composition, method of forming resist pattern, and compound

    公开(公告)号:US11635686B2

    公开(公告)日:2023-04-25

    申请号:US16700846

    申请日:2019-12-02

    Abstract: A resist composition containing a base material component (A) of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, Rbd1 to Rbd3 each independently represent an aryl group which may have a substituent, provided that at least two of Rbd1 to Rbd3 are aryl groups having one or more fluorine atoms as substituents, and at least one of the fluorine atoms of the aryl group is bonded to a carbon atom adjacent to a carbon atom that is bonded to the sulfur atom in the formula, and the total number of the fluorine atoms is 4 or more; X− represents a counter anion.

    Resist composition, method of forming resist pattern, and compound

    公开(公告)号:US11460770B2

    公开(公告)日:2022-10-04

    申请号:US16700780

    申请日:2019-12-02

    Abstract: A resist composition containing a base material component of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, Rbd1 to Rbd3 each independently represent an aryl group which may have a substituent, provided that one or more of Rbd1 to Rbd3 are aryl groups having a fluorinated alkyl group which may have a substituent, and at least one of the fluorinated alkyl groups which may have a substituent in these aryl groups is bonded to a carbon atom adjacent to a carbon atom that is bonded to a sulfur atom in the formula, and a total number of the fluorinated alkyl groups which may have a substituent is 2 or more; X− represents a counter anion.

    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND

    公开(公告)号:US20200174366A1

    公开(公告)日:2020-06-04

    申请号:US16700846

    申请日:2019-12-02

    Abstract: A resist composition containing a base material component (A) of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, Rbd1 to Rbd3 each independently represent an aryl group which may have a substituent, provided that at least two of Rbd1 to Rbd3 are aryl groups having one or more fluorine atoms as substituents, and at least one of the fluorine atoms of the aryl group is bonded to a carbon atom adjacent to a carbon atom that is bonded to the sulfur atom in the formula, and the total number of the fluorine atoms is 4 or more; X− represents a counter anion.

    Resist composition and method of forming resist pattern

    公开(公告)号:US11635687B2

    公开(公告)日:2023-04-25

    申请号:US17114909

    申请日:2020-12-08

    Abstract: A resist composition that generates an acid upon exposure and has solubility in a developing solution, which is changed by action of an acid, the resist composition containing a resin component having a constitutional unit represented by General Formula (a01-1) and a constitutional unit represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a linking group; Ax represents a sulfonyl group or a sulfoxide group; Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group; s0 and v0 represent an integer of 0 to 6; and 1≤s0+v0≤6 and u0≤s0+v0. In General Formula (a02-1), Ra00 represents an acid-dissociable group represented by General Formula (a02-r2-1)

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