公开(公告)号：US20190035636A1

公开(公告)日：2019-01-31

申请号：US16028574

申请日：2018-07-06

Applicant: Toshiba Memory Corporation

Inventor： Yasuhito Yoshimizu ,  Hiroyuki Yasui ,  Yuya Akeboshi ,  Fuyuma Ito

IPC: H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

Abstract: A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.

公开(公告)号：US20180269082A1

公开(公告)日：2018-09-20

申请号：US15920956

申请日：2018-03-14

Applicant: Toshiba Memory Corporation

Inventor： Yasuhito Yoshimizu ,  Yuya Akeboshi ,  Fuyuma Ito ,  Hakuba Kitagawa

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/67075 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139 ,  H01L21/67046 ,  H01L21/6708 ,  H01L21/67086

Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

公开(公告)号：US11171022B2

公开(公告)日：2021-11-09

申请号：US16278757

申请日：2019-02-19

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hakuba Kitagawa ,  Yasuhito Yoshimizu ,  Fuyuma Ito ,  Hiroyuki Tanizaki

IPC: H01L21/67 ,  H01L21/3213

Abstract: In one embodiment, a substrate treatment apparatus includes a supporter configured to support and rotate a substrate, and a liquid supplier configured to supply a liquid to the substrate. The apparatus further includes a wall provided separately from the supporter and at least partially surrounding the supporter, and a detector provided between the supporter and the wall and configured to detect a change in the liquid.

公开(公告)号：US20200091092A1

公开(公告)日：2020-03-19

申请号：US16288896

申请日：2019-02-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Fuyuma Ito ,  Yasuhito Yoshimizu ,  Hakuba Kitagawa

IPC: H01L23/00 ,  H01L21/67 ,  H01J37/32

Abstract: In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.

公开(公告)号：US10804221B2

公开(公告)日：2020-10-13

申请号：US16288896

申请日：2019-02-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Fuyuma Ito ,  Yasuhito Yoshimizu ,  Hakuba Kitagawa

IPC: H01L23/00 ,  H01L21/67 ,  H01J37/32

Abstract: In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.

公开(公告)号：US10720321B2

公开(公告)日：2020-07-21

申请号：US16296816

申请日：2019-03-08

Applicant: Toshiba Memory Corporation

Inventor： Yasuhito Yoshimizu ,  Fuyuma Ito ,  Naomi Yanai

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/033 ,  H01L21/306

Abstract: According to one embodiment, a substrate treating method includes: providing a first liquid onto a pattern on a substrate; providing, after the first liquid is provided, a second liquid containing a first substance to form a film containing the first substance on the pattern; providing, after the second liquid is provided onto the pattern, a third liquid; turning the third liquid into gas; and turning, after the third liquid is turned into gas, the film into gas.

公开(公告)号：US09991159B2

公开(公告)日：2018-06-05

申请号：US15449233

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Fuyuma Ito ,  Yasuhito Yoshimizu ,  Yuya Akeboshi ,  Hisashi Okuchi ,  Masayuki Kitamura

IPC: H01L21/768 ,  H01L21/027 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/0272 ,  H01L21/0273 ,  H01L21/76802 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238

Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved. The method includes removing the catalyst layer on the sacrificial film while leaving the catalyst layer on the base of the second groove unremoved. The method includes forming a second metal film in the second groove by the plating.