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1.发明申请Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals 审中-公开在超临界氨和拉格勒表面积氮化镓晶体中生长大面积氮化镓晶体的方法公开(公告)号：US20070234946A1
公开(公告)日：2007-10-11
申请号：US11784339
申请日：2007-04-06
申请人： Tadao Hashimoto , Makoto Saito , Shuji Nakamura
发明人： Tadao Hashimoto , Makoto Saito , Shuji Nakamura
CPC分类号： C30B29/406 , C30B7/10 , C30B9/00
摘要： A method for growing gallium nitride (GaN) crystals in supercritical ammonia using an autoclave is disclosed. Large surface area GaN crystals are created, which may include calcium, magnesium or vanadium or less than 1% indium.
摘要翻译： 公开了一种使用高压釜在超临界氨中生长氮化镓（GaN）晶体的方法。 产生大面积的GaN晶体，其可包括钙，镁或钒或小于1％的铟。
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公开(公告)号：US20130022528A1
公开(公告)日：2013-01-24
申请号：US13592750
申请日：2012-08-23
申请人： Tadao Hashimoto , Shuji Nakamura
发明人： Tadao Hashimoto , Shuji Nakamura
CPC分类号： C30B29/406 , C30B7/10
摘要： A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.
摘要翻译： 具有暴露的{10-10} m面和暴露（000-1）N极c面的多面体形状的氮化镓晶体，其中暴露（000-1）N-极性c-面的表面积， 平面大于10平方毫米，暴露的{10-10} m面的总表面积大于（000-1）N极C面的表面积的一半。 通过使用具有上部区域和下部区域的高压容器，通过与常规使用的温度和温度差更高的氨热法生长GaN本体晶体。 下部区域的温度为550℃以上，上部区域的温度为500℃以上，下部和上部区域之间的温度差保持在30℃以上。 使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。
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3.发明授权Method for growing group III-nitride crystals in supercritical ammonia using an autoclave 有权使用高压釜在超临界氨中生长III族氮化物晶体的方法公开(公告)号：US08709371B2
公开(公告)日：2014-04-29
申请号：US11921396
申请日：2005-07-08
申请人： Kenji Fujito , Tadao Hashimoto , Shuji Nakamura
发明人： Kenji Fujito , Tadao Hashimoto , Shuji Nakamura
CPC分类号： C30B7/105 , C30B7/10 , C30B29/403 , C30B29/406 , Y10T117/1096
摘要： A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.
摘要翻译： 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。
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公开(公告)号：US08253221B2
公开(公告)日：2012-08-28
申请号：US12234244
申请日：2008-09-19
申请人： Tadao Hashimoto , Shuji Nakamura
发明人： Tadao Hashimoto , Shuji Nakamura
IPC分类号： H01L29/20
CPC分类号： C30B29/406 , C30B7/10
摘要： A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, and using an autoclave having a high-pressure vessel with an upper region and a lower region. The temperature of the lower region of the high-pressure vessel is at or above 550° C., the temperature of the upper region of the high-pressure vessel is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.
摘要翻译： 具有暴露的{10-10} m面和暴露（000-1）N极c面的多面体形状的氮化镓晶体，其中暴露（000-1）N-极性c-面的表面积， 平面大于10平方毫米，暴露的{10-10} m面的总表面积大于（000-1）N极C面的表面积的一半。 通过具有比常规使用的更高的温度和温度差的氨热法生长GaN块状晶体，并且使用具有上部区域和下部区域的高压容器的高压釜。 高压容器的下部区域的温度为550℃以上，高压容器的上部区域的温度为500℃以上，下部温度差为 并且上部区域保持在30℃以上。使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。
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公开(公告)号：US20090072352A1
公开(公告)日：2009-03-19
申请号：US12234244
申请日：2008-09-19
申请人： Tadao Hashimoto , Shuji Nakamura
发明人： Tadao Hashimoto , Shuji Nakamura
IPC分类号： H01L29/20 , H01L21/3205 , C01B21/06
CPC分类号： C30B29/406 , C30B7/10
摘要： A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, and using an autoclave having a high-pressure vessel with an upper region and a lower region. The temperature of the lower region of the high-pressure vessel is at or above 550° C., the temperature of the upper region of the high-pressure vessel is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.
摘要翻译： 具有暴露的{10-10} m面和暴露（000-1）N极c面的多面体形状的氮化镓晶体，其中暴露（000-1）N-极性c-面的表面积， 平面大于10平方毫米，暴露的{10-10} m面的总表面积大于（000-1）N极C面的表面积的一半。 通过具有比常规使用的更高的温度和温度差的氨热法生长GaN块状晶体，并且使用具有上部区域和下部区域的高压容器的高压釜。 高压容器的下部区域的温度为550℃以上，高压容器的上部区域的温度为500℃以上，下部温度差为 并且上部区域保持在30℃以上。使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。
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6.发明申请Method and materials for growing III-nitride semiconductor compounds containing aluminum 审中-公开用于生长含有铝的III族氮化物半导体化合物的方法和材料公开(公告)号：US20080083970A1
公开(公告)日：2008-04-10
申请号：US11801053
申请日：2007-05-08
CPC分类号： C04B35/581 , C23C16/4404 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L21/02573 , H01L21/0262
摘要： A method for growing III-nitride films containing aluminum using Hydride Vapor Phase Epitaxy (HVPE) is disclosed, and comprises using corrosion-resistant materials in an HVPE system, the region of the HVPE system containing the corrosion-resistant materials being an area that contacts an aluminum halide, heating a source zone with an aluminum-containing source above a predetermined temperature, and growing the III-nitride film containing aluminum within the HVPE system containing the corrosion-resistant material.
摘要翻译： 公开了使用氢化物气相外延（HVPE）生长含有铝的III族氮化物膜的方法，并且包括在HVPE系统中使用耐腐蚀材料，所述HVPE系统包含耐腐蚀材料的区域是接触 铝卤化物，将含铝源的源区加热到高于预定温度，并且在含有耐腐蚀材料的HVPE系统内生长含有铝的III族氮化物膜。
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7.发明授权Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth 有权使用通过氨热生长制备的N面或M面氮化镓衬底的光电子和电子器件公开(公告)号：US08263424B2
公开(公告)日：2012-09-11
申请号：US12792615
申请日：2010-06-02
申请人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
发明人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
摘要翻译： 使用氨热生长技术生长具有N面或M面的III-V族氮化物膜的方法。 该方法包括使用高压釜，加热高压釜，并将氨引入高压釜中以产生平滑的N面或M面氮化镓镓膜和体GaN。
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8.发明授权Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth 有权使用用氨热生长制备的N面或M面GaN衬底的光电子和电子器件公开(公告)号：US07755172B2
公开(公告)日：2010-07-13
申请号：US11765629
申请日：2007-06-20
申请人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
发明人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
摘要翻译： 使用氨热生长技术生长具有N面或M面的III-V族氮化物膜的方法。 该方法包括使用高压釜，加热高压釜，并将氨引入高压釜中以产生平滑的N面或M面氮化镓镓膜和体GaN。
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公开(公告)号：US09243344B2
公开(公告)日：2016-01-26
申请号：US13592750
申请日：2012-08-23
申请人： Tadao Hashimoto , Shuji Nakamura
发明人： Tadao Hashimoto , Shuji Nakamura
CPC分类号： C30B29/406 , C30B7/10
摘要： A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.
摘要翻译： 具有暴露的{10-10} m面和暴露（000-1）N极c面的多面体形状的氮化镓晶体，其中暴露（000-1）N-极性c-面的表面积， 平面大于10平方毫米，暴露的{10-10} m面的总表面积大于（000-1）N极C面的表面积的一半。 通过使用具有上部区域和下部区域的高压容器，通过与常规使用的温度和温度差更高的氨热法生长GaN本体晶体。 下部区域的温度为550℃以上，上部区域的温度为500℃以上，下部和上部区域之间的温度差保持在30℃以上。 使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。
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10.发明申请OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH 审中-公开使用通过热成型生长制备的N面或M-平板氮化镓底物的光电子和电子器件公开(公告)号：US20130015492A1
公开(公告)日：2013-01-17
申请号：US13605791
申请日：2012-09-06
申请人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
发明人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
摘要翻译： 使用氨热生长技术生长具有N面或M面的III-V族氮化物膜的方法。 该方法包括使用高压釜，加热高压釜，并将氨引入高压釜中以产生平滑的N面或M面氮化镓镓膜和体GaN。
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