摘要:
An inexpensive mechanical fuse having a high fatigue limit ratio and high rupture reliability, and superior in forming performance, and a method of manufacturing the same are presented. The mechanical fuse is composed of Fe-based sintered alloy, and comprises an inner rim 2 fixed to one power transmission shaft, an outer rim 3 fixed to the other power transmission shaft, and plural arms 4 for linking the inner rim 2 and outer rim 3, which are formed integrally. The arms 4 include rupture portions 6 which are ruptured when exposed to an overload torque. By treating in steam, an iron oxide phase is formed in the surface layer and pore inner wall. The iron oxide phase is effective to form round pores and lower the notch sensitivity. As a result, the fatigue strength and fatigue limit ratio are enhanced.
摘要:
A high strength aluminum alloy casting obtained by casting an aluminum alloy comprised of 7.5 to 11.5 wt % of Si, 3.8 to 4.8 wt % of Cu, 0.45 to 0.65 wt % of Mg, 0.4 to 0.7 wt % of Fe, 0.35 to 0.45 wt % of Mn, and the balance of Al and not more than 0.2 wt % of unavoidable impurities, wherein this aluminum alloy has 0.1 to 0.3 wt % of Ag added to it or contains 0.1 to 1.0 wt % of at least one element selected from the group of second additive elements comprised of Rb, K, Ba, Sr, Zr, Nb, Ta, V, and Pd and rare earth elements, and a method of production of a high strength aluminum alloy casting comprising the steps of filling a melt of an aluminum alloy in a mold to obtain a casting, taking out the aluminum alloy casting from the mold, solubilizing the high strength aluminum alloy casting by heating in a temperature range of 495 to 505° C. for 2 to 6 hours, quenching the high strength aluminum alloy casting after the solubilization, and age hardening the high strength aluminum alloy casting by heating in a temperature range of 160 to 220° C. for 2 to 6 hours after quenching.
摘要:
The present application provides a technique for simultaneously bending and drawing.In a stamping device, the timing at which an upper pad moves downward and grips a work piece between the upper pad and a first supporting surface is adjusted so as not to be later than the timing at which an upper bending steel makes contact with the work piece. The height of a lower end of the upper bending steel after the timing at which the upper bending steel has made contact with the work piece, and the height of a lower surface of a drawing pad after the timing at which the work piece has been gripped between the drawing pad and a third supporting surface are adjusted such that the lower end of the upper bending steel and the lower surface of the drawing pad move downward while maintaining the same height at a boundary between the upper bending steel and the drawing pad.
摘要:
The present invention provides an electronic device with a secondary cell which has a simple structure and is capable of extending a continuous operating period by compensating for power consumption through effective utilization of a light source and external light. On a rear face of a casing 201 of a mobile phone, a light source 204, a conductive key sheet 203 having a plurality of operation keys 206 and a solar battery 202 are layered. Each of the operation keys 206 is exposed outwards through a through-hole 208 of the solar battery 202 and a through-hole 207 of the casing 201. The key sheet 203 guides the light from the light source 204 and the light from the outside of the casing 201 to the solar battery 202 and guides the light from the light source 204 onto the operation key 206. The solar battery 202 receives the light from the light source 204 and the outside of the casing 201 through the key sheet 203 and converts the light into electric energy to be charged into a secondary cell.
摘要:
This invention relates to a plastic formed article having a vapor-deposited film on a surface of a plastic substrate by a plasma CVD method, the vapor-deposited film including an organosilicon vapor-deposited layer on the surface of the plastic substrate 1 and containing no oxygen, and a silicon oxide vapor-deposited layer on the organosilicon vapor-deposited layer. The plastic formed article not only features favorable gas-barrier property but also effectively prevents the generation of offensive odor at the time of vapor deposition and, further, offers excellent flavor-retaining property.
摘要:
A display voltage generating circuit (2-1) for generating display voltages needed to drive an LCD has switches (SW1-1 to SW1-5), of which each has one end connected to one of capacitors (C1 to C5) for smoothing display voltages (V1 to V5) and has the other end connected through one of resistors (R11 to R15) to a supplied voltage (VCC). By an output from a timer (T-1), the switches are kept on for a predetermined period after electric power starts being supplied, so that the capacitors are charged with the supply voltage.
摘要:
A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.
摘要:
A high strength aluminum alloy casting obtained by casting an aluminum alloy comprised of 7.5 to 11.5 wt % of Si, 3.8 to 4.8 wt % of Cu, 0.45 to 0.65 wt % of Mg, 0.4 to 0.7 wt % of Fe, 0.35 to 0.45 wt % of Mn, and the balance of Al and not more than 0.2 wt % of unavoidable impurities, wherein this aluminum alloy has 0.1 to 0.3 wt % of Ag added to it or contains 0.1 to 1.0 wt % of at least one element selected from the group of second additive elements comprised of Rb, K, Ba, Sr, Zr, Nb, Ta, V, and Pd and rare earth elements, and a method of production of a high strength aluminum alloy casting comprising the steps of filling a melt of an aluminum alloy in a mold to obtain a casting, taking out the aluminum alloy casting from the mold, solubilizing the high strength aluminum alloy casting by heating in a temperature range of 495 to 505° C. for 2 to 6 hours, quenching the high strength aluminum alloy casting after the solubilization, and age hardening the high strength aluminum alloy casting by heating in a temperature range of 160 to 220° C. for 2 to 6 hours after quenching.
摘要:
A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.
摘要:
A main circuit includes a first logic circuit behaving as a critical path and a second logic circuit operating comparatively fast. The second logic circuit is fed with a first supply voltage. The first logic circuit is usually fed with a second supply voltage to ensure normal operation of the main circuit. When a clock feed circuit is not feeding a clock, or when an input signal from a signal source remains at a fixed potential, the supply voltage to the first logic circuit is lowered to the first supply voltage.