Mechanical fuse and method of manufacturing the same
    1.
    发明授权
    Mechanical fuse and method of manufacturing the same 有权
    机械保险丝及其制造方法

    公开(公告)号:US07156743B2

    公开(公告)日:2007-01-02

    申请号:US09993562

    申请日:2001-11-27

    摘要: An inexpensive mechanical fuse having a high fatigue limit ratio and high rupture reliability, and superior in forming performance, and a method of manufacturing the same are presented. The mechanical fuse is composed of Fe-based sintered alloy, and comprises an inner rim 2 fixed to one power transmission shaft, an outer rim 3 fixed to the other power transmission shaft, and plural arms 4 for linking the inner rim 2 and outer rim 3, which are formed integrally. The arms 4 include rupture portions 6 which are ruptured when exposed to an overload torque. By treating in steam, an iron oxide phase is formed in the surface layer and pore inner wall. The iron oxide phase is effective to form round pores and lower the notch sensitivity. As a result, the fatigue strength and fatigue limit ratio are enhanced.

    摘要翻译: 提出了具有高疲劳极限比和高破裂可靠性并且成形性能优异的廉价的机械保险丝及其制造方法。 机械保险丝由Fe基烧结合金组成,包括固定在一个动力传递轴上的内轮缘2,固定在另一个动力传递轴上的外轮缘3和用于连接内轮缘2和外轮缘的多个臂4 3,它们一体形成。 臂4包括当暴露于过载扭矩时破裂的破裂部分6。 通过蒸汽处理,在表层和孔内壁形成氧化铁相。 氧化铁相有效地形成圆孔并降低切口灵敏度。 结果,提高了疲劳强度和疲劳极限比。

    High strength aluminum alloy casting and method of production of same
    2.
    发明授权
    High strength aluminum alloy casting and method of production of same 有权
    高强度铝合金铸造及其生产方法相同

    公开(公告)号:US08246763B2

    公开(公告)日:2012-08-21

    申请号:US12798288

    申请日:2010-04-01

    IPC分类号: C22C21/04

    CPC分类号: C22C21/04 C22F1/043

    摘要: A high strength aluminum alloy casting obtained by casting an aluminum alloy comprised of 7.5 to 11.5 wt % of Si, 3.8 to 4.8 wt % of Cu, 0.45 to 0.65 wt % of Mg, 0.4 to 0.7 wt % of Fe, 0.35 to 0.45 wt % of Mn, and the balance of Al and not more than 0.2 wt % of unavoidable impurities, wherein this aluminum alloy has 0.1 to 0.3 wt % of Ag added to it or contains 0.1 to 1.0 wt % of at least one element selected from the group of second additive elements comprised of Rb, K, Ba, Sr, Zr, Nb, Ta, V, and Pd and rare earth elements, and a method of production of a high strength aluminum alloy casting comprising the steps of filling a melt of an aluminum alloy in a mold to obtain a casting, taking out the aluminum alloy casting from the mold, solubilizing the high strength aluminum alloy casting by heating in a temperature range of 495 to 505° C. for 2 to 6 hours, quenching the high strength aluminum alloy casting after the solubilization, and age hardening the high strength aluminum alloy casting by heating in a temperature range of 160 to 220° C. for 2 to 6 hours after quenching.

    摘要翻译: 通过铸造由7.5〜11.5重量%的Si,3.8〜4.8重量%的Cu,0.45〜0.65重量%的Mg,0.4〜0.7重量%的Fe,0.35〜0.45重量%的铝构成的高强度铝合金铸件 的Mn,余量为Al和不大于0.2重量%的不可避免的杂质,其中该铝合金添加0.1至0.3重量%的Ag或含有0.1至1.0重量%的至少一种选自 由Rb,K,Ba,Sr,Zr,Nb,Ta,V和Pd以及稀土元素组成的第二添加元素组,以及制造高强度铝合金铸造的方法,包括以下步骤: 在模具中获得铝合金以获得铸件,从模具中取出铝合金铸件,通过在495至505℃的温度范围内加热将高强度铝合金铸件溶解2至6小时,淬火高 强度铝合金铸造后溶解,并且老化硬化高强度铝合金cas 在160-220℃的温度范围内加热淬火2至6小时。

    Stamping device and stamping method
    3.
    发明申请
    Stamping device and stamping method 有权
    冲压装置和冲压方法

    公开(公告)号:US20100186476A1

    公开(公告)日:2010-07-29

    申请号:US12311623

    申请日:2008-05-30

    申请人: Kouji Yamada

    发明人: Kouji Yamada

    IPC分类号: B21D24/16 B21D22/00

    CPC分类号: B21D22/26 B21D5/01 B21D43/003

    摘要: The present application provides a technique for simultaneously bending and drawing.In a stamping device, the timing at which an upper pad moves downward and grips a work piece between the upper pad and a first supporting surface is adjusted so as not to be later than the timing at which an upper bending steel makes contact with the work piece. The height of a lower end of the upper bending steel after the timing at which the upper bending steel has made contact with the work piece, and the height of a lower surface of a drawing pad after the timing at which the work piece has been gripped between the drawing pad and a third supporting surface are adjusted such that the lower end of the upper bending steel and the lower surface of the drawing pad move downward while maintaining the same height at a boundary between the upper bending steel and the drawing pad.

    摘要翻译: 本申请提供了一种用于同时弯曲和拉伸的技术。 在冲压装置中,调整上垫片向下移动并夹持上垫和第一支撑面之间的工件的时间,以便不比上弯曲钢与工件接触的时间晚 片。 在上部弯曲钢与工件接触的时刻之后的上部弯曲钢的下端的高度以及在夹持工件的时刻之后的拉拔垫的下表面的高度 在上述的上述弯曲钢和上述拉拔板的边界保持相同的高度的同时,调整上述上述弯曲钢的下端和上述拉拔板的下表面向下方移动,

    ELECTRONIC DEVICE WITH POWER GENERATION FUNCTION
    4.
    发明申请
    ELECTRONIC DEVICE WITH POWER GENERATION FUNCTION 失效
    具有发电功能的电子设备

    公开(公告)号:US20100033125A1

    公开(公告)日:2010-02-11

    申请号:US12447518

    申请日:2007-10-26

    申请人: Kouji Yamada

    发明人: Kouji Yamada

    IPC分类号: H01M10/46

    摘要: The present invention provides an electronic device with a secondary cell which has a simple structure and is capable of extending a continuous operating period by compensating for power consumption through effective utilization of a light source and external light. On a rear face of a casing 201 of a mobile phone, a light source 204, a conductive key sheet 203 having a plurality of operation keys 206 and a solar battery 202 are layered. Each of the operation keys 206 is exposed outwards through a through-hole 208 of the solar battery 202 and a through-hole 207 of the casing 201. The key sheet 203 guides the light from the light source 204 and the light from the outside of the casing 201 to the solar battery 202 and guides the light from the light source 204 onto the operation key 206. The solar battery 202 receives the light from the light source 204 and the outside of the casing 201 through the key sheet 203 and converts the light into electric energy to be charged into a secondary cell.

    摘要翻译: 本发明提供一种具有二次电池的电子器件,其具有简单的结构,并且能够通过有效利用光源和外部光来补偿功率消耗来延长连续工作周期。 在移动电话的壳体201的后表面上分层有光源204,具有多个操作键206的导电键片203和太阳能电池202。 每个操作键206通过太阳能电池202的通孔208和壳体201的通孔207向外露出。按键板203将来自光源204的光和来自外部的光 壳体201到太阳能电池202,并将来自光源204的光引导到操作键206上。太阳能电池202通过按键板203从光源204和外壳201的外部接收光,并将 将光转换成电能以充入二次电池。

    PLASTIC FORMED ARTICLE HAVING A VAPOR-DEPOSITED FILM BY A PLASMA CVD METHOD
    5.
    发明申请
    PLASTIC FORMED ARTICLE HAVING A VAPOR-DEPOSITED FILM BY A PLASMA CVD METHOD 审中-公开
    通过等离子体CVD方法制备蒸汽沉积膜的塑料制品

    公开(公告)号:US20090202762A1

    公开(公告)日:2009-08-13

    申请号:US12375140

    申请日:2007-07-26

    IPC分类号: B32B1/02 B32B9/04 C23C16/513

    摘要: This invention relates to a plastic formed article having a vapor-deposited film on a surface of a plastic substrate by a plasma CVD method, the vapor-deposited film including an organosilicon vapor-deposited layer on the surface of the plastic substrate 1 and containing no oxygen, and a silicon oxide vapor-deposited layer on the organosilicon vapor-deposited layer. The plastic formed article not only features favorable gas-barrier property but also effectively prevents the generation of offensive odor at the time of vapor deposition and, further, offers excellent flavor-retaining property.

    摘要翻译: 本发明涉及一种通过等离子体CVD法在塑料基板的表面上具有气相沉积膜的塑料成型体,该蒸镀膜包括在塑料基板1的表面上的有机硅气相沉积层, 氧和在有机硅气相沉积层上的氧化硅气相沉积层。 塑料成型体不仅具有良好的气体阻隔性,而且还有效地防止气相沉积时产生异味,进一步提供优异的保鲜性。

    LCD drive apparatus
    6.
    发明授权
    LCD drive apparatus 失效
    LCD驱动装置

    公开(公告)号:US06844867B2

    公开(公告)日:2005-01-18

    申请号:US10130766

    申请日:2001-09-25

    申请人: Kouji Yamada

    发明人: Kouji Yamada

    IPC分类号: G02F1/133 G09G3/20 G09G3/36

    摘要: A display voltage generating circuit (2-1) for generating display voltages needed to drive an LCD has switches (SW1-1 to SW1-5), of which each has one end connected to one of capacitors (C1 to C5) for smoothing display voltages (V1 to V5) and has the other end connected through one of resistors (R11 to R15) to a supplied voltage (VCC). By an output from a timer (T-1), the switches are kept on for a predetermined period after electric power starts being supplied, so that the capacitors are charged with the supply voltage.

    摘要翻译: 用于产生驱动LCD所需的显示电压的显示电压产生电路(2-1)具有开关(SW1-1至SW1-5),每个开关的一端连接到用于平滑显示的电容器(C1至C5)之一 电压(V1〜V5),另一端通过电阻(R11〜R15)之一连接到供电电压(VCC)。 通过来自定时器(T-1)的输出,在供电开始之后,保持开关一段预定的时间,使得电容器被充满电源电压。

    Microwave plasma processing device and plasma processing gas supply member
    7.
    发明授权
    Microwave plasma processing device and plasma processing gas supply member 有权
    微波等离子体处理装置和等离子体处理气体供应部件

    公开(公告)号:US07582845B2

    公开(公告)日:2009-09-01

    申请号:US10546283

    申请日:2004-03-11

    IPC分类号: B23K10/00

    摘要: A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

    摘要翻译: 微波等离子体处理装置能够在待处理的基板上形成均匀的薄膜。 微波等离子体处理装置包括用于将待处理基板固定在等离子体处理室中的中心轴上的定影装置,用于对基板内部和外部进行减压的排气装置,存在于基板中的金属加工气体供给部件和 与等离子体处理室一起形成可折入的圆柱形谐振系统,以及用于将微波引入等离子体处理室以进行处理的微波引入装置。 在定影装置的基板保持部的特定位置设置有微波密封构件,并且微波导入装置的连接位置被设定在从内部形成的场强分布的规定的弱场位置 等离子体处理室。

    High strength aluminum alloy casting and method of production of same
    8.
    发明申请
    High strength aluminum alloy casting and method of production of same 审中-公开
    高强度铝合金铸造及其生产方法相同

    公开(公告)号:US20080083478A1

    公开(公告)日:2008-04-10

    申请号:US11986853

    申请日:2007-11-27

    IPC分类号: C22F1/043 B22D18/02

    CPC分类号: C22C21/04 C22F1/043

    摘要: A high strength aluminum alloy casting obtained by casting an aluminum alloy comprised of 7.5 to 11.5 wt % of Si, 3.8 to 4.8 wt % of Cu, 0.45 to 0.65 wt % of Mg, 0.4 to 0.7 wt % of Fe, 0.35 to 0.45 wt % of Mn, and the balance of Al and not more than 0.2 wt % of unavoidable impurities, wherein this aluminum alloy has 0.1 to 0.3 wt % of Ag added to it or contains 0.1 to 1.0 wt % of at least one element selected from the group of second additive elements comprised of Rb, K, Ba, Sr, Zr, Nb, Ta, V, and Pd and rare earth elements, and a method of production of a high strength aluminum alloy casting comprising the steps of filling a melt of an aluminum alloy in a mold to obtain a casting, taking out the aluminum alloy casting from the mold, solubilizing the high strength aluminum alloy casting by heating in a temperature range of 495 to 505° C. for 2 to 6 hours, quenching the high strength aluminum alloy casting after the solubilization, and age hardening the high strength aluminum alloy casting by heating in a temperature range of 160 to 220° C. for 2 to 6 hours after quenching.

    摘要翻译: 通过铸造由7.5〜11.5重量%的Si,3.8〜4.8重量%的Cu,0.45〜0.65重量%的Mg,0.4〜0.7重量%的Fe,0.35〜0.45重量%的铝构成的高强度铝合金铸件 的Mn,余量为Al和不大于0.2重量%的不可避免的杂质,其中该铝合金添加0.1至0.3重量%的Ag或含有0.1至1.0重量%的至少一种选自 由Rb,K,Ba,Sr,Zr,Nb,Ta,V和Pd以及稀土元素组成的第二添加元素组,以及制造高强度铝合金铸造的方法,包括以下步骤: 在模具中获得铝合金以获得铸件,从模具中取出铝合金铸件,通过在495至505℃的温度范围内加热将高强度铝合金铸件溶解2至6小时,淬火高 强度铝合金铸造后溶解,并且老化硬化高强度铝合金cas 在160-220℃的温度范围内加热淬火2至6小时。

    Microwave plasma processing method

    公开(公告)号:US20070000879A1

    公开(公告)日:2007-01-04

    申请号:US10550509

    申请日:2004-04-12

    IPC分类号: B23K9/02

    摘要: A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.

    Semiconductor device
    10.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:US20060033533A1

    公开(公告)日:2006-02-16

    申请号:US11199931

    申请日:2005-08-08

    申请人: Kouji Yamada

    发明人: Kouji Yamada

    IPC分类号: H03K19/096

    CPC分类号: H03K19/1731 H03K19/0016

    摘要: A main circuit includes a first logic circuit behaving as a critical path and a second logic circuit operating comparatively fast. The second logic circuit is fed with a first supply voltage. The first logic circuit is usually fed with a second supply voltage to ensure normal operation of the main circuit. When a clock feed circuit is not feeding a clock, or when an input signal from a signal source remains at a fixed potential, the supply voltage to the first logic circuit is lowered to the first supply voltage.

    摘要翻译: 主电路包括表现为关键路径的第一逻辑电路和比较快速地工作的第二逻辑电路。 第二逻辑电路馈送有第一电源电压。 第一逻辑电路通常馈送有第二电源电压,以确保主电路的正常工作。 当时钟馈电电路没有馈送时钟时,或当来自信号源的输入信号保持在固定电位时,第一逻辑电路的电源电压降低到第一电源电压。