公开(公告)号：US20130052763A1

公开(公告)日：2013-02-28

申请号：US13424155

申请日：2012-03-19

申请人： Tae-Young CHOI ,  Bo-Sung KIM ,  Kwang-Yeol LEE ,  See-Won KIM

发明人： Tae-Young CHOI ,  Bo-Sung KIM ,  Kwang-Yeol LEE ,  See-Won KIM

IPC分类号： H01L33/28 ,  C01B13/14 ,  C01G9/02 ,  B82Y30/00 ,  B82Y20/00 ,  B82Y40/00

CPC分类号： C01B13/32 ,  B82Y30/00 ,  B82Y40/00 ,  C01G1/02 ,  C01G9/02 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64

摘要： A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.

摘要翻译： 纳米棒的制造方法以及其中形成有包含金属氧化物的种子的显示基板的制造方法。 通过使种子与有机溶剂中的金属前体反应形成纳米棒。 因此，可以容易地形成纳米棒，并且可以提高纳米棒的制造可靠性和使用纳米棒的显示基板。

公开(公告)号：US20120100649A1

公开(公告)日：2012-04-26

申请号：US13100149

申请日：2011-05-03

申请人： Young-Min KIM ,  Seon-Pil JANG ,  Bo-Sung KIM ,  Yeon-Taek JEONG ,  Yong-Su LEE ,  Tae-Young CHOI ,  Ki-Beom LEE ,  Kang Moon JO

发明人： Young-Min KIM ,  Seon-Pil JANG ,  Bo-Sung KIM ,  Yeon-Taek JEONG ,  Yong-Su LEE ,  Tae-Young CHOI ,  Ki-Beom LEE ,  Kang Moon JO

IPC分类号： H01L33/08 ,  B05D3/06 ,  H01L21/336 ,  B05D5/00 ,  H01L21/26 ,  B05D3/02 ,  B05D5/06

CPC分类号： H01L29/7869 ,  H01L21/02667 ,  H01L21/324 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78633

摘要： Provided is a method for manufacturing a film structure.The method for manufacturing the film structure n includes forming a layer of a precursor material on a substrate, preheating the precursor material, and irradiating the precursor material with microwave radiation to form the film structure.

摘要翻译： 提供一种膜结构的制造方法。 制造薄膜结构体n的方法包括在基材上形成前体材料层，预热前体材料，并用微波辐射照射前体材料，形成薄膜结构体。

公开(公告)号：US20130234169A1

公开(公告)日：2013-09-12

申请号：US13619075

申请日：2012-09-14

申请人： Bo-Sung KIM ,  Jun-Ho SONG ,  Doo-Na KIM ,  Kang-Moon JO ,  Tae-Young CHOI ,  Masataka KANO ,  Yeon-Taek JEONG

发明人： Bo-Sung KIM ,  Jun-Ho SONG ,  Doo-Na KIM ,  Kang-Moon JO ,  Tae-Young CHOI ,  Masataka KANO ,  Yeon-Taek JEONG

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

摘要： In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

摘要翻译： 在制造薄膜晶体管的方法中，在具有栅电极的基底基板的快速表面上，在基底基板的第一表面，氧化物半导体层，绝缘层和光致抗蚀剂层上形成栅电极。 使用第一光致抗蚀剂图案对绝缘层和氧化物半导体层进行构图，以形成蚀刻停止层和活性图案。 源极和漏极形成在具有有源图案的基底基板上，并且蚀刻停止器，源极电极和漏电极与蚀刻停止器的两端重叠并且彼此间隔开。 因此，当形成活性图案和蚀刻停止物时，可以通过省略掩模来降低制造成本。

公开(公告)号：US20110233536A1

公开(公告)日：2011-09-29

申请号：US12839705

申请日：2010-07-20

申请人： Young-Min KIM ,  Yeon-Taek JEONG ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Bo-Sung KIM ,  Tae-Young CHOI

发明人： Young-Min KIM ,  Yeon-Taek JEONG ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Bo-Sung KIM ,  Tae-Young CHOI

IPC分类号： H01L29/786 ,  H01L21/368

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66969

摘要： A thin film transistor array panel including an oxide semiconductor layer realizing excellent stability and electrical characteristics and an easy method of manufacturing the same are provided. A thin film transistor array panel includes: a substrate; an oxide semiconductor layer disposed on the substrate and including a metal oxide selected from the group consisting of zinc oxide, tin oxide, and hafnium oxide; a gate electrode overlapping the oxide semiconductor layer; a gate insulating film disposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed to at least partially overlap the oxide semiconductor layer and separated from each other.

摘要翻译： 提供了包括实现优异的稳定性和电特性的氧化物半导体层的薄膜晶体管阵列面板及其制造方法。 薄膜晶体管阵列面板包括：基板; 设置在所述基板上并且包括选自氧化锌，氧化锡和氧化铪的金属氧化物的氧化物半导体层; 与氧化物半导体层重叠的栅电极; 设置在所述氧化物半导体层和所述栅电极之间的栅极绝缘膜; 以及源电极和漏电极，其设置成至少部分地与氧化物半导体层重叠并且彼此分离。

公开(公告)号：US20080073648A1

公开(公告)日：2008-03-27

申请号：US11859033

申请日：2007-09-21

申请人： Tae-Young CHOI ,  Bo-Sung KIM

发明人： Tae-Young CHOI ,  Bo-Sung KIM

IPC分类号： H01L51/10 ,  H01L29/04

CPC分类号： H01L27/283 ,  H01L51/102

摘要： A thin film transistor array panel includes a gate electrode formed on a substrate, a gate insulator covering the gate electrode, a source electrode including a first transparent material and disposed on the gate insulator, a drain electrode including a second transparent material and disposed on the gate insulator, and an organic semiconductor formed on the source and drain electrodes, and the gate insulator therebetween. The source electrode includes a first boundary opposing a second boundary of the drain electrode relative to the gate electrode, and the opposing boundaries overlap boundaries of the gate electrode with an alignment margin in the range of about −1 to +5 microns.

摘要翻译： 薄膜晶体管阵列面板包括形成在基板上的栅电极，覆盖栅电极的栅极绝缘体，包括第一透明材料并设置在栅极绝缘体上的源电极，包括第二透明材料的漏电极， 栅极绝缘体和形成在源极和漏极上的有机半导体以及栅极绝缘体之间。 源电极包括与漏电极相对于栅电极的第二边界相对的第一边界，并且相对的边界与栅电极的边界重叠，取向余量在约-1至+5微米的范围内。

公开(公告)号：US20120184058A1

公开(公告)日：2012-07-19

申请号：US13430280

申请日：2012-03-26

申请人： Tae-Young CHOI ,  Bo-Sung KIM ,  Young-Min KIM

发明人： Tae-Young CHOI ,  Bo-Sung KIM ,  Young-Min KIM

IPC分类号： H01L33/50

CPC分类号： H01L27/1225 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

摘要翻译： 本发明提供了一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。

公开(公告)号：US20120138965A1

公开(公告)日：2012-06-07

申请号：US13112381

申请日：2011-05-20

申请人： Tae-Young CHOI ,  Kang-Moon JO ,  Bo-Sung KIM ,  Young-Min KIM

发明人： Tae-Young CHOI ,  Kang-Moon JO ,  Bo-Sung KIM ,  Young-Min KIM

IPC分类号： H01L33/62

CPC分类号： H01L27/1288 ,  H01L27/1225 ,  H01L27/1292

摘要： A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element.

摘要翻译： 显示基板包括基底基板，数据线，栅极线，开关元件，自组装单层（SAM）和像素电极。 数据线形成在基底基板上。 栅极线跨越数据线形成。 开关元件包括电连接到数据线的源电极，与源电极间隔开的漏电极，覆盖源电极和漏电极的半导体图案，以及电连接到栅极线并面向半导体图案的栅电极。 SAM围绕半导​​体图案设置，并且包括数据线的导电图案。 像素电极电连接到开关元件。

公开(公告)号：US20110296418A1

公开(公告)日：2011-12-01

申请号：US13115881

申请日：2011-05-25

申请人： Bo-Sung KIM ,  Jong-Kyun SHIN ,  Hee-Deog KIM ,  Hyung-Chul JUNG

发明人： Bo-Sung KIM ,  Jong-Kyun SHIN ,  Hee-Deog KIM ,  Hyung-Chul JUNG

IPC分类号： G06F9/46

CPC分类号： G06F3/04842 ,  G06F3/04817 ,  G06F11/328 ,  G06F11/3409 ,  Y02D10/34

摘要： A method and an apparatus are provided for preventing battery power consumption and degradation of system performance due to the system resources being utilized by applications being executed, while providing a multi-tasking function through a plurality of applications. In the method, when a plurality of applications are executed, such execution of the plurality of applications is reported to the user, so as to enable the user to terminate one or more applications, thereby preventing unnecessary consumption of battery power.

摘要翻译： 提供了一种方法和装置，用于防止电池电力消耗和系统性能的恶化，这是由于正被执行的应用程序正在利用的系统资源，同时通过多个应用提供多任务功能。 在该方法中，当执行多个应用时，向用户报告多个应用的​​执行，以使用户能够终止一个或多个应用，从而防止不必要的电池电力消耗。

公开(公告)号：US20090111211A1

公开(公告)日：2009-04-30

申请号：US12325951

申请日：2008-12-01

申请人： Bo-Sung KIM ,  Joon-hak Oh ,  Yoag-uk Lee

发明人： Bo-Sung KIM ,  Joon-hak Oh ,  Yoag-uk Lee

IPC分类号： H01L51/40 ,  H01J9/00 ,  H01L21/70

CPC分类号： H01L51/0533

摘要： The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.

摘要翻译： 本公开涉及包括绝缘基板的显示装置; 绝缘基板上的源电极和漏极，并由沟道区分离; 有机半导体层，其形成在所述沟道区域中以及所述源电极和所述漏电极的至少一部分的至少一部分上; 以及具有设置在有机半导体层和源电极之间的第一部分的自组装单层和设置在有机半导体层和漏电极之间的第二部分，以减小电极和有机半导体层之间的接触电阻。 因此，本发明的实施例提供了一种显示装置，其包括增强其性能的TFT。

公开(公告)号：US20110296417A1

公开(公告)日：2011-12-01

申请号：US13115874

申请日：2011-05-25

申请人： Bo-Sung KIM ,  Jong-Kyun SHIN ,  Hee-Deog KIM ,  Hyung-Chul JUNG

发明人： Bo-Sung KIM ,  Jong-Kyun SHIN ,  Hee-Deog KIM ,  Hyung-Chul JUNG

IPC分类号： G06F9/46

CPC分类号： G06F3/04842 ,  G06F3/04817 ,  G06F11/328 ,  G06F11/3409 ,  Y02D10/34

摘要： A method and an apparatus are provided for preventing battery power consumption and degradation of system performance due to the system resources being utilized by applications being executed, while providing a multi-tasking function through a plurality of applications. In the method, when a plurality of applications are executed, such execution of the plurality of applications is reported to the user, so as to enable the user to terminate one or more applications, thereby preventing unnecessary consumption of battery power.