Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the same
    6.
    发明申请
    Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the same 审中-公开
    形成钽碳氮化物层的方法和使用其制造半导体器件的方法

    公开(公告)号:US20070059929A1

    公开(公告)日:2007-03-15

    申请号:US11438941

    申请日:2006-05-23

    IPC分类号: H01L21/44

    摘要: In some embodiments of the present invention, methods of forming a tantalum carbon nitride layer include introducing a source gas including a tantalum metal complex onto a substrate, wherein one or more of the ligands of the tantalum metal complex include nitrogen and one or more of the ligands of the tantalum metal complex include carbon; and thermally decomposing the tantalum metal complex to form a tantalum carbon nitride layer on the substrate. In some embodiments, the tantalum metal complex includes Ta(NR1)(NR2R3)3, wherein R1, R2 and R3 are each independently H or a C1-C6 alkyl group. In some embodiments, the tantalum metal complex may be [Ta(═NC(CH3)2C2H5)(N(CH3)2)3]. Methods of forming a gate structure, methods of manufacturing dual gate electrodes and methods of manufacturing a capacitor including tantalum carbon nitride are also provided herein.

    摘要翻译: 在本发明的一些实施例中,形成氮化钽层的方法包括将包含钽金属络合物的源气体引入到基底上,其中一个或多个钽金属络合物的配体包括氮和一个或多个 钽金属络合物的配体包括碳; 并且在所述衬底上热分解所述钽金属络合物以形成钽碳氮化物层。 在一些实施方案中,钽金属络合物包括Ta(NR 1)3(NR 2 R 3)3, 其中R 1,R 2和R 3各自独立地为H或C 1 -C 3 - 6烷基。 在一些实施方案中,钽金属络合物可以是[Ta(-NC(CH 3)2)2 H 2 H 5, (N(CH 3)2)3)3。 形成栅极结构的方法,制造双栅电极的方法以及制造包括氮化钽的电容器的方法也在本文中提供。