公开(公告)号：US20120217626A1

公开(公告)日：2012-08-30

申请号：US13353666

申请日：2012-01-19

申请人： Taiji SAKAI ,  Kazukiyo Joshin ,  Tadahiro Imada ,  Nobuhiro Imaizumi ,  Keishiro Okamoto

发明人： Taiji SAKAI ,  Kazukiyo Joshin ,  Tadahiro Imada ,  Nobuhiro Imaizumi ,  Keishiro Okamoto

IPC分类号： H01L23/495 ,  H01L21/58

CPC分类号： H03F1/3247 ,  H01L21/4825 ,  H01L23/49524 ,  H01L23/49558 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L24/84 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/181 ,  H03F3/189 ,  H03F3/24 ,  H03F2200/204 ,  H03F2200/451 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099 ,  H01L2224/84

摘要： A method for manufacturing a semiconductor device, includes: placing a seal layer including a connection conductive film on the surface so that the connection conductive film is in contact with an electrode of a semiconductor element and a lead; electrically coupling the electrode and the lead through the connection conductive film; and sealing the semiconductor element by the seal layer.

摘要翻译： 一种半导体器件的制造方法，其特征在于，包括：将具有连接导电膜的密封层放置在所述表面上，使得所述连接导电膜与半导体元件的电极和引线接触; 通过连接导电膜电连接电极和引线; 并通过密封层密封半导体元件。

公开(公告)号：US20090186425A1

公开(公告)日：2009-07-23

申请号：US12413898

申请日：2009-03-30

申请人： Masataka MIZUKOSHI ,  Yoshikatsu ISHIZUKI ,  Kanae NAKAGAWA ,  Keishiro OKAMOTO ,  Kazuo TESHIROGI ,  Taiji SAKAI

发明人： Masataka MIZUKOSHI ,  Yoshikatsu ISHIZUKI ,  Kanae NAKAGAWA ,  Keishiro OKAMOTO ,  Kazuo TESHIROGI ,  Taiji SAKAI

IPC分类号： H01L21/66 ,  H01L21/98 ,  H01L23/498 ,  H01L21/78 ,  H01L21/44

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/78 ,  H01L22/12 ,  H01L22/14 ,  H01L22/26 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11464 ,  H01L2224/11602 ,  H01L2224/11632 ,  H01L2224/1184 ,  H01L2224/13012 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73104 ,  H01L2224/749 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/81075 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2224/29099

摘要： A semiconductor substrate (1) is secured by suction to a rear face (1b) of a supporting face (11a) of a substrate supporting table (11). In this event, the thickness of the semiconductor substrate (1) is made fixed by planarization on the rear face (1b), and the rear face (1b) is forcibly brought into a state free from undulation by the suction to the supporting face (11a), so that the rear face (1b) becomes a reference face for planarization of a front face (1a). In this state, a tool (10) is used to cut surface layers of Au projections (2) and a resist mask (12) on the front face (1a), thereby planarizing the Au projections (2) and the resist mask (12) so that their surfaces become continuously flat. This can planarize the surfaces of fine bumps formed on the substrate at a low cost and a high speed in place of CMP.

摘要翻译： 半导体衬底（1）通过抽吸固定到衬底支撑台（11）的支撑面（11a）的后表面（1b）上。 在这种情况下，半导体衬底（1）的厚度通过在后表面（1b）上的平坦化而被固定，并且后表面（1b）被强制地进入到通过吸力而不起伏的状态到支撑面（ 11a），使得背面（1b）成为用于使正面（1a）平坦化的基准面。 在这种状态下，使用工具（10）来切割前表面（1a）上的Au突起（2）和抗蚀剂掩模（12）的表面层，从而使Au突起（2）和抗蚀剂掩模（12）平坦化 ），使其表面变得连续平坦。 这可以以低成本和高速代替CMP来平坦化形成在基板上的微细凸块的表面。

公开(公告)号：US20120244665A1

公开(公告)日：2012-09-27

申请号：US13404521

申请日：2012-02-24

申请人： Taiji SAKAI ,  Nobuhiro Imaizumi ,  Masataka Mizukoshi

发明人： Taiji SAKAI ,  Nobuhiro Imaizumi ,  Masataka Mizukoshi

IPC分类号： H01L21/60

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/75 ,  H01L2224/11013 ,  H01L2224/1184 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/75101 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2224/83192 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13064 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes: forming a first layer including crystals by processing a surface of a first electrode of a semiconductor element; forming a second layer including crystals by processing a surface of a second electrode of a mounting member on which the semiconductor element is mounted; reducing a first oxide film present over or in the first layer and a second oxide film present over or in the second layer at a first temperature, the first temperature being lower than a second temperature at which a first metal included in the first electrode diffuses in a solid state and being lower than a third temperature at which a second metal included in the second electrode diffuses in a solid state; and bonding the first layer and the second layer to each other by solid-phase diffusion.

摘要翻译： 一种制造半导体器件的方法包括：通过处理半导体元件的第一电极的表面，形成包括晶体的第一层; 通过加工其上安装有半导体元件的安装构件的第二电极的表面，形成包括晶体的第二层; 在第一温度下减少存在于第一层上或第一层中的第一氧化物膜和存在于第二层中或第二层中的第二氧化物膜，第一温度低于包含在第一电极中的第一金属扩散的第二温度 并且低于包含在第二电极中的第二金属以固态扩散的第三温度; 以及通过固相扩散将第一层和第二层彼此结合。