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公开(公告)号：US07402461B2
公开(公告)日：2008-07-22
申请号：US11019157
申请日：2004-12-23
IPC分类号： H01L21/44
CPC分类号： H01L24/12 , H01L21/563 , H01L23/3157 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/1134 , H01L2224/1148 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81801 , H01L2224/81894 , H01L2224/83191 , H01L2224/83856 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/15311 , H01L2924/1579 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2924/00014 , H01L2924/0665 , H01L2224/29099
摘要： The present invention is aimed at providing a method of connecting base materials capable of forming metal terminals having a uniform height and smooth surface with a low cost, and of realizing a low-damage mounting, in which a work is planarized while keeping the temperature of the insulating film, possibly elevated due to frictional heat generated during cutting using a cutting tool, lower than 80° C., and keeping the temperature range lower than 80° C. throughout the entire period of the cutting, the electrodes and electrodes are opposed and brought into contact at a temperature of 80° C. or above but lower than the curing temperature of the insulating film, the insulating film is liquefied and a space between the electrodes and electrodes is filled with an insulating resin composing the insulating film, and the insulating resin is cured at the curing temperature or above.
摘要翻译： 本发明旨在提供一种能够以低成本形成具有均匀高度和平滑表面的金属端子的基材的方法，并且实现了低损伤安装，其中工件平坦化同时保持温度 绝缘膜由于在使用切割工具的切割期间产生的摩擦热可能升高，低于80℃，并且在切割的整个整个周期内保持温度范围低于80℃，电极和电极相对 并在80℃以上且低于绝缘膜的固化温度的温度下接触，使绝缘膜液化，并且用构成绝缘膜的绝缘树脂填充电极和电极之间的空间，以及 绝缘树脂在固化温度以上固化。
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公开(公告)号：US20050227474A1
公开(公告)日：2005-10-13
申请号：US11019157
申请日：2004-12-23
CPC分类号： H01L24/12 , H01L21/563 , H01L23/3157 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/1134 , H01L2224/1148 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81801 , H01L2224/81894 , H01L2224/83191 , H01L2224/83856 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/15311 , H01L2924/1579 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2924/00014 , H01L2924/0665 , H01L2224/29099
摘要： The present invention is aimed at providing a method of connecting base materials capable of forming metal terminals having a uniform height and smooth surface with a low cost, and of realizing a low-damage mounting, in which a work is planarized while keeping the temperature of the insulating film, possibly elevated due to frictional heat generated during cutting using a cutting tool, lower than 80° C., and keeping the temperature range lower than 80° C. throughout the entire period of the cutting, the electrodes and electrodes are opposed and brought into contact at a temperature of 80° C. or above but lower than the curing temperature of the insulating film, the insulating film is liquefied and a space between the electrodes and electrodes is filled with an insulating resin composing the insulating film, and the insulating resin is cured at the curing temperature or above.
摘要翻译： 本发明旨在提供一种能够以低成本形成具有均匀高度和平滑表面的金属端子的基材的方法，并且实现了低损伤安装，其中工件平坦化同时保持温度 绝缘膜由于在使用切割工具的切割期间产生的摩擦热可能升高，低于80℃，并且在切割的整个整个周期内保持温度范围低于80℃，电极和电极相对 并在80℃以上且低于绝缘膜的固化温度的温度下接触，使绝缘膜液化，并且用构成绝缘膜的绝缘树脂填充电极和电极之间的空间，以及 绝缘树脂在固化温度以上固化。
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公开(公告)号：US08409931B2
公开(公告)日：2013-04-02
申请号：US13404521
申请日：2012-02-24
IPC分类号： H01L21/60
CPC分类号： H01L24/81 , H01L24/11 , H01L24/13 , H01L24/75 , H01L2224/11013 , H01L2224/1184 , H01L2224/13111 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16245 , H01L2224/75101 , H01L2224/81065 , H01L2224/81075 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/8183 , H01L2224/83192 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13064 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes: forming a first layer including crystals by processing a surface of a first electrode of a semiconductor element; forming a second layer including crystals by processing a surface of a second electrode of a mounting member on which the semiconductor element is mounted; reducing a first oxide film present over or in the first layer and a second oxide film present over or in the second layer at a first temperature, the first temperature being lower than a second temperature at which a first metal included in the first electrode diffuses in a solid state and being lower than a third temperature at which a second metal included in the second electrode diffuses in a solid state; and bonding the first layer and the second layer to each other by solid-phase diffusion.
摘要翻译： 一种制造半导体器件的方法包括：通过处理半导体元件的第一电极的表面，形成包括晶体的第一层; 通过加工其上安装有半导体元件的安装构件的第二电极的表面，形成包括晶体的第二层; 在第一温度下减少存在于第一层上或第一层中的第一氧化物膜和存在于第二层中或第二层中的第二氧化物膜，第一温度低于包含在第一电极中的第一金属扩散的第二温度 并且低于包含在第二电极中的第二金属以固态扩散的第三温度; 以及通过固相扩散将第一层和第二层彼此结合。
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公开(公告)号：US20120244665A1
公开(公告)日：2012-09-27
申请号：US13404521
申请日：2012-02-24
IPC分类号： H01L21/60
CPC分类号： H01L24/81 , H01L24/11 , H01L24/13 , H01L24/75 , H01L2224/11013 , H01L2224/1184 , H01L2224/13111 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16245 , H01L2224/75101 , H01L2224/81065 , H01L2224/81075 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/8183 , H01L2224/83192 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13064 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes: forming a first layer including crystals by processing a surface of a first electrode of a semiconductor element; forming a second layer including crystals by processing a surface of a second electrode of a mounting member on which the semiconductor element is mounted; reducing a first oxide film present over or in the first layer and a second oxide film present over or in the second layer at a first temperature, the first temperature being lower than a second temperature at which a first metal included in the first electrode diffuses in a solid state and being lower than a third temperature at which a second metal included in the second electrode diffuses in a solid state; and bonding the first layer and the second layer to each other by solid-phase diffusion.
摘要翻译： 一种制造半导体器件的方法包括：通过处理半导体元件的第一电极的表面，形成包括晶体的第一层; 通过加工其上安装有半导体元件的安装构件的第二电极的表面，形成包括晶体的第二层; 在第一温度下减少存在于第一层上或第一层中的第一氧化物膜和存在于第二层中或第二层中的第二氧化物膜，第一温度低于包含在第一电极中的第一金属扩散的第二温度 并且低于包含在第二电极中的第二金属以固态扩散的第三温度; 以及通过固相扩散将第一层和第二层彼此结合。
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5.发明授权Method for processing a base that includes connecting a first base to a second base 有权用于处理包括将第一基座连接到第二基座的基座的方法公开(公告)号：US07816180B2
公开(公告)日：2010-10-19
申请号：US12403252
申请日：2009-03-12
IPC分类号： H01L21/58
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。
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6.发明授权Method for processing a base that includes connecting a first base to a second base with an insulating film 有权用于处理基底的方法，其包括用绝缘膜将第一基底连接到第二基底公开(公告)号：US07811835B2
公开(公告)日：2010-10-12
申请号：US12403283
申请日：2009-03-12
IPC分类号： H01L21/58
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。
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公开(公告)号：US20090181497A1
公开(公告)日：2009-07-16
申请号：US12403283
申请日：2009-03-12
IPC分类号： H01L21/60
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
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8.发明授权Method for processing a base that includes connecting a first base to a second base with an insulating film 有权用于处理基底的方法，其包括用绝缘膜将第一基底连接到第二基底公开(公告)号：US07514295B2
公开(公告)日：2009-04-07
申请号：US11196487
申请日：2005-08-04
IPC分类号： H01L21/60
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。
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公开(公告)号：US20060030071A1
公开(公告)日：2006-02-09
申请号：US11196487
申请日：2005-08-04
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。
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公开(公告)号：US20060027936A1
公开(公告)日：2006-02-09
申请号：US11017875
申请日：2004-12-22
CPC分类号： H01L21/563 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05684 , H01L2224/1147 , H01L2224/13099 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/45139 , H01L2224/45144 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81801 , H01L2224/83191 , H01L2224/83194 , H01L2224/838 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/0781 , H01L2924/13091 , H01L2924/1579 , H01L2924/19041 , H01L2924/00 , H01L2924/00015 , H01L2224/29099 , H01L2224/48 , H01L2924/013 , H01L2924/01049
摘要： Electrodes and an insulating film are both formed of materials which have characteristics that they are solid and do not exhibit adhesiveness at a room temperature, exhibit adhesiveness at and above a first temperature higher than this, and are cured at and above a second temperature higher than this. Planarication processing is carried out by performing cutting with a hard cutting tool made of diamond and the like so that surfaces film the electrodes and a surface of the insulating film become continuously planar.
摘要翻译： 电极和绝缘膜均由具有固体特性并且在室温下不具有粘合性的材料形成，在高于此的第一温度以上显示粘合性，并且在高于 这个。 通过使用由金刚石等制成的硬切割工具进行切割来进行平面化处理，使得电极的表面和绝缘膜的表面成为连续的平面。
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