公开(公告)号：US20200033194A1

公开(公告)日：2020-01-30

申请号：US16438710

申请日：2019-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jen-Hao YEH ,  Chun-Lin CHANG ,  Han-Lung CHANG ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G01J4/04 ,  G02B5/30 ,  G03F7/20 ,  G02B27/28

Abstract: A light source system is provided. The light source system is capable of measuring a polarization angle and includes a light source configured to emit an original light beam, and the original light beam has an original polarization angle. The light source system further includes an amplifying module configured to amplify the original light beam and generate a forward beam for hitting a target, and the forward beam has a forward polarization angle that is equal to the original polarization angle. The light source system further includes a polarization measurement unit, and the polarization measurement unit includes a first polarization measurement module configured to receive a first return beam and measure a first polarization angle of the first return beam. The first return beam is reflected from the target.

公开(公告)号：US20170022611A9

公开(公告)日：2017-01-26

申请号：US14680105

申请日：2015-04-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Lin CHANG ,  Hsin-Hsien WU ,  Zin-Chang WEI ,  Chi-Ming YANG ,  Chyi Shyuan CHERN ,  Jun-Lin YEH ,  Jih-Jse LIN ,  Jo Fei WANG ,  Ming-Yu FAN ,  Jong-I MOU

IPC: C23C16/46 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67 ,  H01J37/32

CPC classification number: C23C16/4586 ,  C23C16/46 ,  G06F17/18 ,  G06K9/6284 ,  G06Q30/018 ,  H01J37/32724 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/67253

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract translation: 提供了一种用于控制电路的关键尺寸（CD）的装置和方法。 一种装置包括控制器，用于在第一基板上的蚀刻膜中的电路图案的各个位置处接收CD测量值，以及用于在第二基板上形成膜材料的第二膜的单晶片室。 单个晶片室响应于来自控制器的信号，以基于测量的CD来局部地调整第二胶片的厚度。 一种方法提供了蚀刻第一衬底上的膜的电路图案，测量电路图案的CD，基于所测量的CD调整单晶片室以在第二半导体衬底上形成第二膜。 基于测量的CD来局部地调整第二膜厚度。

公开(公告)号：US20200075190A1

公开(公告)日：2020-03-05

申请号：US16551294

申请日：2019-08-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ting-Ya CHENG ,  Chun-Lin CHANG ,  Li-Jui CHEN ,  Han-Lung CHANG

IPC: G21K1/06 ,  H05G2/00

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.

公开(公告)号：US20170152607A1

公开(公告)日：2017-06-01

申请号：US15154986

申请日：2016-05-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Wei WANG ,  Chun-Lin CHANG

IPC: C25D17/12 ,  C25D17/00

CPC classification number: C25D17/12 ,  C25D17/001 ,  C25D17/007 ,  C25D17/008

Abstract: A high resistance virtual anode for an electroplating cell includes a first layer and a second layer. The first layer includes a plurality of first holes through the first layer. The second layer is over the first layer and includes a plurality of second holes through the second layer.

公开(公告)号：US20150211122A1

公开(公告)日：2015-07-30

申请号：US14680105

申请日：2015-04-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Lin CHANG ,  Hsin-Hsien WU ,  Zin-Chang WEI ,  Chi-Ming YANG ,  Chyi Shyuan CHERN ,  Jun-Lin YEH ,  Jih-Jse LIN ,  Jo Fei WANG ,  Ming-Yu FAN ,  Jong-I MOU

IPC: C23C16/46 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67 ,  H01J37/32

CPC classification number: C23C16/4586 ,  C23C16/46 ,  G06F17/18 ,  G06K9/6284 ,  G06Q30/018 ,  H01J37/32724 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/67253

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract translation: 提供了一种用于控制电路的关键尺寸（CD）的装置和方法。 一种装置包括控制器，用于在第一基板上的蚀刻膜中的电路图案的各个位置处接收CD测量值，以及用于在第二基板上形成膜材料的第二膜的单晶片室。 单个晶片室响应于来自控制器的信号，以基于测量的CD来局部地调整第二胶片的厚度。 一种方法提供了蚀刻第一衬底上的膜的电路图案，测量电路图案的CD，基于所测量的CD调整单晶片室以在第二半导体衬底上形成第二膜。 基于测量的CD来局部地调整第二膜厚度。

公开(公告)号：US20200008290A1

公开(公告)日：2020-01-02

申请号：US16380423

申请日：2019-04-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Shuo SU ,  Chun-Lin CHANG ,  Han-Lung CHANG ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G03F7/20 ,  G21K1/06

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

公开(公告)号：US20150270103A1

公开(公告)日：2015-09-24

申请号：US14727957

申请日：2015-06-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Nai-Han CHENG ,  Chi-Ming YANG ,  Chin-Hsiang LIN

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3172 ,  H01J2237/12 ,  H01J2237/20228 ,  H01J2237/30477 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764

Abstract: A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.

Abstract translation: 提供了用于离子注入方法和装置的过程控制方法，以在衬底上产生高剂量区域，例如可以补偿所指出的不均匀性。 在离子注入工具中，分离的可控电极被设置为设置在离子束外部的多组相对的电极。 光束阻挡器可以定位到离子束中。 电极和光束阻挡器都是可控的，以减少入射到基板上的离子束的面积。 电极和光束阻挡器也改变入射在表面上的减小面积的离子束的位置。 衬底扫描通过离子束的速度可以在植入过程期间动态地改变，以在衬底中产生各种剂量浓度。

公开(公告)号：US20130330938A1

公开(公告)日：2013-12-12

申请号：US13964150

申请日：2013-08-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zin-Chang WEI ,  Hsin-Hsien WU ,  Chun-Lin CHANG

IPC: H01L21/324

CPC classification number: H01L21/324 ,  F27B17/0025 ,  H01L21/67109

Abstract: A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.

Abstract translation: 提供了一种使用半导体炉在半导体晶片上形成材料层的方法，该半导体炉包括具有多个可旋转加热器的加热系统的热反应室，用于提供均匀温度分布的加热区。 该方法使热反应室内的温度变化最小化并且促进沉积在晶片上的膜的均匀厚度。