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公开(公告)号：US11681225B2
公开(公告)日：2023-06-20
申请号：US16803885
申请日：2020-02-27
发明人： You-Hua Chou , Kuo-Sheng Chuang
IPC分类号： H01L21/00 , G03F7/06 , H01L21/033
CPC分类号： G03F7/06 , H01L21/0332 , H01L21/0337
摘要： A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.
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公开(公告)号：US11281091B2
公开(公告)日：2022-03-22
申请号：US16694348
申请日：2019-11-25
发明人： You-Hua Chou , Kuo-Sheng Chuang
摘要： A photomask includes a patterned photomask plate and a supporting member. The patterned photomask plate has a pattern region and a peripheral region surrounding the pattern region. The patterned photomask plate includes a plurality of openings in the pattern region. The supporting member directly abuts the patterned photomask plate and is in a peripheral region of the patterned photomask plate. The supporting member is formed from a different material than the patterned photomask plate.
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公开(公告)号：US10714575B2
公开(公告)日：2020-07-14
申请号：US16410346
申请日：2019-05-13
发明人： Kuo-Sheng Chuang , You-Hua Chou , Ming-Chi Huang
IPC分类号： H01L29/40 , H01L27/088 , H01L29/165 , H01L29/10 , H01L29/51 , H01L29/66 , H01L21/02 , H01L21/28 , H01L21/8234 , H01L21/67 , H01L21/677 , H01L21/311 , H01L29/78 , H01L29/08
摘要： A transistor includes a channel region, a gate stack, and source and drain structures. The channel region comprises silicon germanium and has a first silicon-to-germanium ratio. The gate stack is over the channel region and comprises a silicon germanium oxide layer over the channel region, a high-κ dielectric layer over the silicon germanium oxide layer, and a gate electrode over the high-κ dielectric layer. The silicon germanium oxide layer has a second silicon-to-germanium ratio. The second silicon-to-germanium ratio is substantially the same as the first silicon-to-germanium ratio. The channel region is between the source and drain structures.
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公开(公告)号：US10510572B2
公开(公告)日：2019-12-17
申请号：US16449452
申请日：2019-06-24
IPC分类号： H01L21/677
摘要： A semiconductor processing station including a platform, a load port, and a carrier transport track is provided. The platform includes an intake/outtake port and a plurality of processing modules. The load port includes a load chamber, a movable cover, and a carrier transfer module. The load chamber communicates with the intake/outtake port and has a load opening at its top end for receiving a transport carrier within the load chamber. The movable cover is disposed at the load opening and configured to seal the load opening. The carrier transfer module is configured to transfer the transport carrier to the intake/outtake port. The carrier transport track has a bottom side configured to open the load chamber.
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公开(公告)号：US20210272799A1
公开(公告)日：2021-09-02
申请号：US16803885
申请日：2020-02-27
发明人： You-Hua Chou , Kuo-Sheng Chuang
IPC分类号： H01L21/027 , G03F7/06
摘要： A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.
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6.发明授权公开(公告)号：US11067898B2
公开(公告)日：2021-07-20
申请号：US16896218
申请日：2020-06-09
发明人： You-Hua Chou , Kuo-Sheng Chuang
摘要： One of gamma ray lithography systems includes a gamma ray generator and a wafer stage. The gamma ray generator is configured to generate a substantially uniform gamma ray. The gamma ray generator includes a plurality of gamma ray sources and a rotational carrier. The rotational carrier is configured to hold the gamma ray sources and rotate along a rotational axis. The wafer stage is disposed below the gamma ray generator and configured to secure a wafer.
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7.发明申请公开(公告)号：US20210033980A1
公开(公告)日：2021-02-04
申请号：US16896218
申请日：2020-06-09
发明人： You-Hua Chou , Kuo-Sheng Chuang
摘要： One of gamma ray lithography systems includes a gamma ray generator and a wafer stage. The gamma ray generator is configured to generate a substantially uniform gamma ray. The gamma ray generator includes a plurality of gamma ray sources and a rotational carrier. The rotational carrier is configured to hold the gamma ray sources and rotate along a rotational axis. The wafer stage is disposed below the gamma ray generator and configured to secure a wafer.
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公开(公告)号：US10290716B2
公开(公告)日：2019-05-14
申请号：US15663791
申请日：2017-07-30
发明人： Kuo-Sheng Chuang , You-Hua Chou , Ming-Chi Huang
IPC分类号： H01L21/02 , H01L21/28 , H01L21/67 , H01L29/08 , H01L29/10 , H01L29/40 , H01L29/51 , H01L29/66 , H01L29/78 , H01L21/677 , H01L27/088 , H01L29/165 , H01L21/8234
摘要： A semiconductor device has a semiconductor substrate. A silicon germanium layer is disposed on the semiconductor substrate. The silicon germanium layer has a first silicon-to-germanium ratio. A first gate structure is disposed on the silicon germanium layer, and the first gate structure includes an interfacial layer on the silicon germanium layer. The interface layer has a second silicon-to-germanium ratio substantially the same as the first silicon-to-germanium ratio of the silicon germanium layer. The first gate structure also includes a high-dielectric layer on the interfacial layer and a first gate electrode on the high-κ dielectric layer.
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公开(公告)号：US20180284628A1
公开(公告)日：2018-10-04
申请号：US15471170
申请日：2017-03-28
发明人： You-Hua Chou , Kuo-Sheng Chuang
IPC分类号： G03F7/20
摘要： An apparatus for a lithography device is provided, which includes a laser-based particle eliminating component and a particle collector. The laser-based particle eliminating component includes a laser emitter and a laser absorbing member. The laser emitter is configured to emit laser beams for irradiating particles in a space near a photomask of the lithography device. The laser absorbing member is disposed opposite to the laser emitter for absorbing the laser beams. The particle collector is configured for collecting the irradiated particles.
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10.发明申请Integrated System, Integrated System Operation Method And Film Treatment Method 审中-公开综合系统，综合系统运行方法及薄膜处理方法公开(公告)号：US20150147826A1
公开(公告)日：2015-05-28
申请号：US14091630
申请日：2013-11-27
发明人： Weibo Yu , Wen-Yu Ku , Kuo-Sheng Chuang , Chin-Hsiang Lin
IPC分类号： H01L21/66 , G01N21/21 , H01L21/677 , H01L21/02 , H01L21/306 , G01B11/06 , H01L21/67
CPC分类号： H01L21/30604 , G01B11/0641 , G01N2201/025 , G01N2201/061 , H01L21/67253 , H01L22/12 , H01L22/20
摘要： An integrated system operation method is disclosed that includes the following steps: the film of a substrate is measured by a metrology apparatus to obtain a film information. The substrate is moved from the metrology apparatus to a process apparatus adjacent to the transfer apparatus. The film information is sent to the process apparatus. A film treatment is applied to the substrate in accordance with the film information.
摘要翻译： 公开了一种集成系统操作方法，其包括以下步骤：通过计量装置测量基板的膜以获得胶片信息。 基板从计量装置移动到与传送装置相邻的处理装置。 电影信息被发送到处理装置。 根据胶片信息对基材进行胶片处理。
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