公开(公告)号：US20190115222A1

公开(公告)日：2019-04-18

申请号：US16219835

申请日：2018-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Ying LIAO ,  Chung-Bin TSENG ,  Po-Zen CHEN ,  Yi-Hung CHEN ,  Yi-Jie CHEN

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/308 ,  H01L21/28 ,  H01L21/033 ,  H01L21/027 ,  H01L29/66

CPC classification number: H01L21/3065 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/31127 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/78

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.

公开(公告)号：US20170170024A1

公开(公告)日：2017-06-15

申请号：US15444039

申请日：2017-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Ying LIAO ,  Chung-Bin TSENG ,  Po-Zen CHEN ,  Yi-Hung CHEN ,  Yi-Jie CHEN

IPC: H01L21/3065 ,  H01L29/66 ,  H01L21/28 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/31127 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/78

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.

公开(公告)号：US20170154891A1

公开(公告)日：2017-06-01

申请号：US15134262

申请日：2016-04-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Keng-Ying LIAO ,  Po-Zen CHEN ,  Yi-Jie CHEN ,  Yi-Hung CHEN

IPC: H01L27/115 ,  H01L21/311 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L21/31116 ,  H01L29/6653 ,  H01L29/66825

Abstract: The present disclosure provides a method of fabricating a semiconductor structure, and the method includes following steps. A gate structure is formed on a substrate, and a liner layer is formed to cover the gate structure and the substrate. A spacer layer is formed on the liner layer, and an etching gas is continuously provided to remove a portion of the spacer layer while maintaining the substrate at a second pressure, which the etching gas has a first pressure. The second pressure is greater than the first pressure.