公开(公告)号：US12033860B2

公开(公告)日：2024-07-09

申请号：US17377864

申请日：2021-07-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Guan-Xuan Chen ,  Sheng-Liang Pan ,  Chia-Yang Hung ,  Po-Chuan Wang ,  Huan-Just Lin

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L21/28247 ,  H01L21/76877 ,  H01L21/76897 ,  H01L21/02063 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/02332 ,  H01L21/0234

摘要： A method for making a semiconductor device includes patterning at least one dielectric layer disposed over a conductive cap layer to form a via opening penetrating through the at least one dielectric layer to expose the conductive cap layer and to form a top portion of the conductive cap layer into a metal oxide layer; converting the metal oxide layer to a metal oxynitride layer by a soft ashing process using a processing gas containing nitrogen gas; removing the metal oxynitride layer from a remaining portion of the conductive cap layer; and forming a via contact in the via opening to electrically connect the remaining portion of the conductive cap layer.

公开(公告)号：US11923433B2

公开(公告)日：2024-03-05

申请号：US17195967

申请日：2021-03-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Liang Pan ,  Yungtzu Chen ,  Chung-Chieh Lee ,  Yung-Chang Hsu ,  Chia-Yang Hung ,  Po-Chuan Wang ,  Guan-Xuan Chen ,  Huan-Just Lin

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/08 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/6656 ,  H01L21/02126 ,  H01L21/0217 ,  H01L29/0847 ,  H01L29/4983 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

摘要： A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

公开(公告)号：US20210359104A1

公开(公告)日：2021-11-18

申请号：US17195967

申请日：2021-03-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Liang Pan ,  Yungtzu Chen ,  Chung-Chieh Lee ,  Yung-Chang Hsu ,  Chia-Yang Hung ,  Po-Chuan Wang ,  Guan-Xuan Chen ,  Huan-Just Lin

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/49 ,  H01L21/02

摘要： A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

公开(公告)号：US20200098588A1

公开(公告)日：2020-03-26

申请号：US16698398

申请日：2019-11-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jack Kuo-Ping Kuo ,  Sheng-Liang Pan ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/67

摘要： An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.

公开(公告)号：US12125898B2

公开(公告)日：2024-10-22

申请号：US17358606

申请日：2021-06-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Sheng-Liang Pan ,  Yung-Tzu Chen ,  Chung-Chieh Lee ,  Yung-Chang Hsu ,  Chia-Yang Hung ,  Po-Chuan Wang ,  Guan-Xuan Chen ,  Huan-Just Lin

IPC分类号： H01L29/66 ,  H01L21/762 ,  H01L29/417 ,  H01L29/51

CPC分类号： H01L29/6656 ,  H01L21/76224 ,  H01L29/41783 ,  H01L29/511 ,  H01L29/66795

摘要： A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

公开(公告)号：US10510553B1

公开(公告)日：2019-12-17

申请号：US15993178

申请日：2018-05-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jack Kuo-Ping Kuo ,  Sheng-Liang Pan ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01J37/32

摘要： An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.

公开(公告)号：US20190371619A1

公开(公告)日：2019-12-05

申请号：US15993178

申请日：2018-05-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jack Kuo-Ping Kuo ,  Sheng-Liang Pan ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01J37/32

摘要： An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.