公开(公告)号：US20220320304A1

公开(公告)日：2022-10-06

申请号：US17845066

申请日：2022-06-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Meng-Han Lin ,  Chih-Ren Hsieh

IPC分类号： H01L29/423 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/788 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/28

摘要： An integrated circuit device includes a semiconductor substrate having a memory area and a logic area. A memory cell in the memory area includes a select gate separated from a floating gate by a floating gate spacer. A select gate spacer is formed on a side of the select gate opposite the floating gate. The select gate spacer has a uniform thickness over most of the select gate. The first layer of the select gate spacer may be formed by oxidizing the select gate electrode. A second layer of the select gate spacer may be formed by atomic layer deposition. The memory area may be covered by a protective layer while spacers are formed adjacent logic gates in the logic region.

公开(公告)号：US11864381B2

公开(公告)日：2024-01-02

申请号：US17567613

申请日：2022-01-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Meng-Han Lin ,  Chih-Ren Hsieh ,  Ching-Wen Chan

IPC分类号： H10B41/50 ,  H10B41/40 ,  H10B41/43 ,  H10B41/10

CPC分类号： H10B41/50 ,  H10B41/40 ,  H10B41/43 ,  H10B41/10

摘要： In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

公开(公告)号：US20240147718A1

公开(公告)日：2024-05-02

申请号：US18406592

申请日：2024-01-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Meng-Han Lin ,  Chih-Ren Hsieh ,  Chen-Chin Liu ,  Chih-Pin Huang

IPC分类号： H10B41/50 ,  H01L21/033 ,  H01L21/28 ,  H01L21/308 ,  H01L21/321 ,  H01L29/423 ,  H01L29/51 ,  H10B41/10 ,  H10B41/41

CPC分类号： H10B41/50 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3212 ,  H01L29/40117 ,  H01L29/42328 ,  H01L29/518 ,  H10B41/10 ,  H10B41/41 ,  H10B43/35

摘要： Some embodiments of the present application are directed towards an integrated circuit (IC). The integrated circuit includes a semiconductor substrate including a logic region and a memory cell region. A logic device is arranged on the logic region. A memory device is arranged on the memory cell region. An isolation structure extends into a top surface of the semiconductor substrate, and laterally separates the logic region from the memory cell region. The isolation structure includes dielectric material and has an uppermost surface and a slanted upper surface extending from the uppermost surface to an edge of the isolation structure proximate to memory cell region.