公开(公告)号：US20100330781A1

公开(公告)日：2010-12-30

申请号：US12825005

申请日：2010-06-28

申请人： Takafumi SASAKI ,  Sadao NAKASHIMA ,  Yoshinori IMAI ,  Koei KURIBAYASHI

发明人： Takafumi SASAKI ,  Sadao NAKASHIMA ,  Yoshinori IMAI ,  Koei KURIBAYASHI

IPC分类号： H01L21/20 ,  C23C16/54

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/4412 ,  C23C16/45514 ,  C23C16/45578 ,  C23C16/54 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529

摘要： There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.

摘要翻译： 提供了一种用于在高温条件下生长SiC外延膜的衬底处理装置，半导体器件的制造方法和制造衬底的方法。 基板处理装置包括：反应室; 第一气体供给系统，其配置为至少供给含有硅原子的气体和含有氯原子的气体，或者含有硅和氯原子的气体; 配置成供给至少一种还原气体的第二气体供给系统; 第三气体供给系统，被配置为至少提供含有碳原子的气体; 连接到第一气体供应系统或第一和第三气体供应系统的第一气体供应喷嘴; 连接到第二气体供应系统或第二和第三气体供应系统的第二气体供应喷嘴; 以及控制器，被配置为控制第一至第三气体供应系统。

公开(公告)号：US20100297832A1

公开(公告)日：2010-11-25

申请号：US12782090

申请日：2010-05-18

申请人： Yoshinori IMAI ,  Hideji SHIBATA ,  Takafumi SASAKI

发明人： Yoshinori IMAI ,  Hideji SHIBATA ,  Takafumi SASAKI

IPC分类号： H01L21/205 ,  C23C16/32 ,  C23C16/455

CPC分类号： H01L21/205 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/14 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/0262

摘要： Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.

摘要翻译： 提供了一种基板处理装置，半导体装置制造方法和基板制造方法。 基板处理装置包括：被配置为处理基板的反应室; 配置为至少提供含硅气体和含氯气体或至少含有硅和氯的气体的第一气体供给系统; 连接到第一气体供应系统的第一气体供应单元; 构造成供给至少一种还原气体的第二气体供给系统; 连接到第二气体供应系统的第二气体供应单元; 第三气体供给系统，被配置为至少提供含碳气体，并连接到所述第一气体供给单元和所述第二气体供给单元中的至少一个; 以及控制单元，被配置为控制所述第一至第三气体供应系统。

公开(公告)号：US20080111862A1

公开(公告)日：2008-05-15

申请号：US11936922

申请日：2007-11-08

申请人： Takafumi SASAKI

发明人： Takafumi SASAKI

IPC分类号： B41J2/04

CPC分类号： B41J2/055 ,  B41J2/14274

摘要： A liquid dispenser head includes nozzles, pressure chambers, an energy generator, a shared chamber, a vibration member, and a specific wall portion. The nozzles discharge liquid. Each of the pressure chambers communicates with a corresponding one of the nozzles. The energy generator, provided for each of the pressure chambers, generates energy for pressurizing liquid in the pressure chamber. The shared chamber supplies liquid to the pressure chambers. The vibration member, forming a wall of each one of the pressure chambers, includes an energy-transmitting area configured to transmit the energy generated by the energy generator to each one of the pressure chambers. The specific wall portion, constituting at least a part of the same wall, or a different wall, of each of the pressure chambers, has a structural compliance set greater than a compression compliance of liquid in the pressure chamber.

摘要翻译： 液体分配头包括喷嘴，压力室，能量发生器，共用室，振动构件和特定的壁部分。 喷嘴排出液体。 每个压力室与相应的一个喷嘴连通。 为每个压力室提供的能量发生器产生用于对压力室中的液体加压的能量。 共用室向压力室供应液体。 形成每个压力室的壁的振动构件包括能量传递区域，其被配置为将由能量发生器产生的能量传递到每个压力室。 构成每个压力室的至少一部分壁或不同壁的特定壁部具有大于压力室中液体的压缩顺应性的结构顺应度。

公开(公告)号：US20170173887A1

公开(公告)日：2017-06-22

申请号：US15375738

申请日：2016-12-12

申请人： Takafumi SASAKI

发明人： Takafumi SASAKI

IPC分类号： B29C67/00 ,  B33Y50/02 ,  B33Y30/00

CPC分类号： B33Y50/02 ,  B29C64/165 ,  B29C64/386 ,  B29K2105/0058 ,  B29K2105/251 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/00

摘要： A three-dimensional shaping apparatus includes: a supplying unit configured to supply powder to a storage unit to form a layer of the powder; a discharging unit configured to discharge shaping liquid to solidify the powder onto the powder; and a controlling unit configured to generate a control signal for controlling the supplying unit and the discharging unit based on shaping data indicating a shape of a three-dimensional shaped object. The controlling unit is configured to generate the control signal for laminating at least one sacrificial layer separable from at least one shaping layer corresponding to the three-dimensional shaped object in such a position that the at least one sacrificial layer is under the at least one shaping layer, based on the shaping data and powder information stored in advance and indicating change in thickness of a layer of the powder caused by permeation of the shaping liquid.

公开(公告)号：US20160368214A1

公开(公告)日：2016-12-22

申请号：US15186731

申请日：2016-06-20

申请人： Takafumi SASAKI ,  Soyoung PARK ,  Hiroyuki MIYATA

发明人： Takafumi SASAKI ,  Soyoung PARK ,  Hiroyuki MIYATA

IPC分类号： B29C67/00 ,  B33Y30/00 ,  B33Y50/02 ,  B33Y10/00

CPC分类号： B29C67/0081 ,  B29C64/165 ,  B29C64/20 ,  B29C64/386 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02

摘要： A three-dimensional fabrication apparatus includes a fabrication chamber, a liquid discharge device, a vibration applicator, and a controller. In the fabrication chamber, powder is layered to form a powder layer, the powder of the powder layer is bonded together in a desired shape to form a layered fabrication object, and another layered fabrication object is laminated on the layered fabrication object. The liquid discharge device discharges a fabrication liquid onto the powder in the fabrication chamber. The vibration applicator applies vibration to the powder layer onto which the fabrication liquid is discharged from the liquid discharge device. The controller controls and drives the vibration applicator to apply vibration to the powder layer when the liquid discharge device discharges the fabrication liquid onto the powder layer to form the layered fabrication object.

摘要翻译： 三维制造装置包括制造室，液体排出装置，振动施加器和控制器。 在制造室中，将粉末层叠以形成粉末层，粉末层的粉末以期望的形状结合在一起以形成层叠的制造物体，并且另外的分层制造物体层叠在层叠的制造物上。 液体排出装置将制造液体排放到制造室中的粉末上。 振动施加器对从液体排出装置排出制造液体的粉末层施加振动。 当液体排出装置将制造液体排放到粉末层上时，控制器控制并驱动振动施加器以对粉末层施加振动，以形成分层制造物体。

公开(公告)号：US20100242682A1

公开(公告)日：2010-09-30

申请号：US12625675

申请日：2009-11-25

申请人： Takafumi SASAKI ,  Takayoshi FUJII

发明人： Takafumi SASAKI ,  Takayoshi FUJII

IPC分类号： C22B15/06 ,  C22B19/00 ,  C22B9/00 ,  C21B7/14 ,  C22B1/14 ,  C22B1/00

CPC分类号： C22B15/0054 ,  C22B5/12 ,  C22B7/04 ,  Y02P10/216

摘要： A method for processing converter slag produced in copper smelting includes feeding the converter slag into a reducing furnace, reducing zinc and copper contained in the converter slag by heating and removing the reduced zinc through volatilization in a reducing furnace. The slag discharged from the converter is transformed into a raw material for iron making.

摘要翻译： 一种处理在铜冶炼中生产的转炉渣的方法，包括将转炉炉渣送入还原炉中，通过在还原炉中挥发加热除去还原锌来还原转炉炉渣中所含的锌和铜。 从转炉排出的炉渣转化为炼铁原料。

公开(公告)号：US20140028756A1

公开(公告)日：2014-01-30

申请号：US13949589

申请日：2013-07-24

申请人： Hideaki NISHIMURA ,  Yukitoshi TAJIMA ,  Takafumi SASAKI

发明人： Hideaki NISHIMURA ,  Yukitoshi TAJIMA ,  Takafumi SASAKI

IPC分类号： B41J2/14

CPC分类号： B41J2/14 ,  B41J2/14233 ,  B41J2002/14362

摘要： A droplet discharge head includes a nozzle plate provided with a nozzle opening which discharges an ink drop, an actuator substrate which forms a pressurized liquid chamber communicating with the nozzle opening, and is provided with a pressure generator changing a pressure in the pressured liquid chamber, and a common liquid chamber-forming substrate which forms a common liquid chamber to which ink which is supplied to the pressurized liquid chamber is supplied, the common liquid chamber-forming substrate includes a first plate made of a metal material, a second plate made of a resin material provided on one surface of the first plate, and a third plate made of a resin material provided on the other surface of the first plate, and the first plate, the second plate, and the third plate being integrally molded in a thickness direction.

摘要翻译： 液滴喷射头包括：喷嘴板，其具有喷出墨滴的喷嘴开口;形成与喷嘴开口连通的加压液体室的致动器基板，并且设置有压力发生器，其改变加压液体室中的压力; 以及公共液体室形成基板，其形成供给到加压液体室的墨的公共液体室，所述公共液体室形成基板包括由金属材料制成的第一板，由 设置在第一板的一个表面上的树脂材料和设置在第一板的另一个表面上的由树脂材料制成的第三板，并且第一板，第二板和第三板一体地模制成厚度 方向。

公开(公告)号：US20110065286A1

公开(公告)日：2011-03-17

申请号：US12841440

申请日：2010-07-22

申请人： Takafumi SASAKI ,  Masanao FUKUDA ,  Masayoshi MINAMI ,  Yasuhiro MEGAWA

发明人： Takafumi SASAKI ,  Masanao FUKUDA ,  Masayoshi MINAMI ,  Yasuhiro MEGAWA

IPC分类号： H01L21/71 ,  B05C11/00 ,  B05C21/00

CPC分类号： H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/67109 ,  H01L29/40114 ,  H01L29/7881

摘要： At a low temperature of 500° C. to 700° C., the concentration of atomic oxygen is controlled in a wafer stacked direction, and the thickness distribution of oxide films is kept uniform in the wafer stacked direction. A semiconductor device manufacturing method includes a process of oxidizing substrates by supplying oxygen-containing gas and hydrogen-containing gas through a mixing part from an end side of a substrate arrangement region where the substrates are arranged inside the process chamber so that the gases flow toward the other end side of the substrate arrangement region, and supplying hydrogen-containing gas from mid-flow locations corresponding to the substrate arrangement region. The oxygen-containing gas and the hydrogen-containing gas reacts with each other in the mixing part to produce an oxidation species containing atomic oxygen, and the oxidation species has a maximum concentration at an ejection hole through which the oxidation species is ejected from the mixing part into the process chamber.

摘要翻译： 在500℃〜700℃的低温下，原子氧的浓度在晶片堆叠方向上被控制，氧化膜的厚度分布在晶片堆叠方向上保持均匀。 半导体器件制造方法包括通过从基板布置区域的端面侧的混合部分供给含氧气体和含氢气体来进行氧化基板的处理，其中基板布置区域布置在处理室内，使得气体朝向 在衬底布置区域的另一端侧，并且从对应于衬底布置区域的中流动位置供给含氢气体。 含氧气体和含氢气体在混合部分中彼此反应以产生含有原子氧的氧化物质，氧化物质在喷射孔中具有最大浓度，氧化物质通过其从混合物中喷出 部分进入处理室。

公开(公告)号：US20170259456A1

公开(公告)日：2017-09-14

申请号：US15440023

申请日：2017-02-23

申请人： Takafumi SASAKI ,  Shinichiroh SATOH

发明人： Takafumi SASAKI ,  Shinichiroh SATOH

IPC分类号： B28B17/00 ,  B33Y50/02 ,  B33Y10/00 ,  B33Y30/00 ,  B28B1/00 ,  B22F3/00

CPC分类号： B28B17/0081 ,  B22F3/008 ,  B28B1/001 ,  B29C64/165 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02

摘要： An apparatus for producing three-dimensional objects is provided including a bonding liquid applier and a controller. The bonding liquid applier applies a bonding liquid to a powder layer to form a bonded layer. The controller controls the bonding liquid applier to repeatedly form an (n)th bonded layer by applying a predetermined amount of the bonding liquid per unit area, in multiple times, to a new bonding region in an (n)th powder layer, below which an (n−1)th bonded layer does not exist, and applying the predetermined amount of the bonding liquid per unit area, in a smaller number of times than the multiple times, to an existing bonding region in the (n)th powder layer, below which the (n−1)th bonded layer exists, while increasing a numeral (n) representing an integer of 1 and above in increment of 1, to laminate multiple bonded layers into a three-dimensional object.

公开(公告)号：US20120069071A1

公开(公告)日：2012-03-22

申请号：US13229859

申请日：2011-09-12

申请人： Takafumi SASAKI

发明人： Takafumi SASAKI

IPC分类号： B41J29/38

CPC分类号： B41J2/04581 ,  B41J2/0452 ,  B41J2/04563 ,  B41J2/04588 ,  B41J2/04593 ,  B41J2/04596

摘要： An image forming apparatus creates a drive waveform containing a first pulse to discharge the droplet and a second pulse to cause a liquid to flow within a recording head. A data creation part creates data to select a first or second droplet discharge pulse. The first droplet discharge pulse contains the first pulse and the second pulse. The second droplet discharge pulse does not contain the second pulse. When the first or second droplet discharge pulse is selected in a subsequent drive period and when neither the first nor second droplet discharge pulse is selected in a current drive period, the second pulse is selected in the current drive period when selecting the second droplet discharge pulse in the subsequent drive period, and the second pulse is not selected in the current drive period when selecting the first droplet discharge pulse in the subsequent drive period.

摘要翻译： 图像形成装置产生包含第一脉冲以驱动液滴的驱动波形和第二脉冲以使液体在记录头内流动。 数据创建部分创建数据以选择第一或第二液滴放电脉冲。 第一液滴喷射脉冲包含第一脉冲和第二脉冲。 第二液滴喷射脉冲不包含第二脉冲。 当在随后的驱动周期中选择第一或第二液滴喷射脉冲时，并且当在当前驱动周期中都不选择第一和第二液滴喷射脉冲时，在选择第二液滴喷射脉冲时在当前驱动周期中选择第二脉冲 并且在随后的驱动周期中选择第一液滴喷出脉冲时，在当前驱动周期中不选择第二脉冲。