公开(公告)号：US20110212599A1

公开(公告)日：2011-09-01

申请号：US13036330

申请日：2011-02-28

申请人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

发明人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

摘要： Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, and including at least one second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the plurality of substrates are stacked, the method including the steps of: loading the plurality of substrates into the reaction chamber; and forming SiC films by supplying at least a silicon-containing gas and a chlorine-containing gas or a silicon/chlorine-containing gas through the first gas supply port and supplying at least a carbon-containing gas and a reduction gas through the second gas supply port.

摘要翻译： 提供一种使用基板处理设备制造半导体器件的方法，该基板处理设备包括其中多个基板以预定距离堆叠的反应室; 第一气体供给喷嘴，其安装成延伸到所述多个基板堆叠的区域; 第二气体供给喷嘴，其安装成在与堆叠所述多个基板的区域中延伸到与所述第一气体供给喷嘴的位置不同的位置; 第一分支喷嘴，其安装在所述第一气体供给喷嘴的平行于所述多个基板的主表面的方向上，所述第一分支喷嘴的至少一条线沿所述第二气体供给喷嘴的方向分支，并且包括至少一个第一气体供应 港口; 以及第二分支喷嘴，其在与所述多个基板的主表面平行的方向上安装在所述第二气体供给喷嘴处，所述第二分支喷嘴的至少一条线沿所述第一气体供给喷嘴的方向分支，并且包括至少一个第二喷嘴 供气口; 其特征在于，所述第一气体供给口和所述第二气体供给口沿所述多个基板层叠的方向彼此相邻地安装，所述方法包括以下步骤：将所述多个基板装载到所述反应室中; 以及通过经由所述第一气体供给口至少供给含硅气体和含氯气体或含硅/氯气体而形成SiC膜，并且通过所述第二气体供给至少含碳气体和还原气体 供应口。

公开(公告)号：US20090311873A1

公开(公告)日：2009-12-17

申请号：US11989488

申请日：2006-07-20

申请人： Jie Wang ,  Ryuji Yamamoto ,  Sadao Nakashima

发明人： Jie Wang ,  Ryuji Yamamoto ,  Sadao Nakashima

IPC分类号： H01L21/30

CPC分类号： H01L21/67109 ,  C23C16/4401

摘要： Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube.

摘要翻译： 公开了一种基板处理装置，其包括在其中处理基板的反应管，其中反应管包括外管，设置在外管内的内管和支撑部分，以支撑内管，内管和 支撑部分由石英或碳化硅制成，并且在支撑部分和内管之间设置有减震构件。

公开(公告)号：US20080268644A1

公开(公告)日：2008-10-30

申请号：US12068330

申请日：2008-02-05

申请人： Kenji Kameda ,  Naonori Akae ,  Kenichi Suzaki ,  Yushin Takasawa ,  Sadao Nakashima

发明人： Kenji Kameda ,  Naonori Akae ,  Kenichi Suzaki ,  Yushin Takasawa ,  Sadao Nakashima

IPC分类号： H01L21/306

CPC分类号： C23C16/4405 ,  H01L21/3185

摘要： There are provided the steps of loading a substrate into a reaction vessel; forming a film on the substrate while supplying a film forming gas into the reaction vessel; unloading the substrate after film formation from the reaction vessel; supplying a cleaning gas into the reaction vessel while lowering a temperature in the reaction vessel and removing a deposit deposited on at least an inner wall of the reaction vessel in the film forming step.

摘要翻译： 提供了将基底装载到反应容器中的步骤; 在将所述成膜气体供给到所述反应容器中的同时在所述基板上形成膜; 从反应容器中成膜后卸载基材; 在降低反应容器内的温度的同时将清洗气体供给到反应容器中，并且在成膜步骤中除去沉积在反应容器的至少内壁上的沉积物。

公开(公告)号：US5658809A

公开(公告)日：1997-08-19

申请号：US403518

申请日：1995-03-13

申请人： Sadao Nakashima ,  Katsutoshi Izumi ,  Norihiko Ohwada ,  Tatsuhiko Katayama

发明人： Sadao Nakashima ,  Katsutoshi Izumi ,  Norihiko Ohwada ,  Tatsuhiko Katayama

IPC分类号： H01L21/76 ,  H01L21/02 ,  H01L21/265 ,  H01L21/31 ,  H01L21/762 ,  H01L21/86 ,  H01L27/00 ,  H01L27/12

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.

摘要翻译： 一种通过将氧离子注入单晶硅衬底并在高温下在惰性气体气氛中进行退火处理的方法来制造具有电绝缘状态的掩埋氧化层上的单晶硅层的SOI衬底 以形成掩埋氧化物层。 在掩埋氧化物层的厚度成为与由注入氧形成的掩埋氧化物层的厚度一致的理论值的退火处理之后，基板的氧化处理在高温氧气氛中进行。

公开(公告)号：US20120315767A1

公开(公告)日：2012-12-13

申请号：US13580933

申请日：2011-02-22

申请人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

发明人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

IPC分类号： H01L21/31 ,  C23C16/32

CPC分类号： C23C16/45578 ,  C23C16/325 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S438/931

摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.

摘要翻译： 通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流 入口在这些气体流到达基板之前彼此交叉。 制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体 从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

公开(公告)号：US07901206B2

公开(公告)日：2011-03-08

申请号：US11887004

申请日：2006-03-27

申请人： Akira Morohashi ,  Iwao Nakamura ,  Ryota Sasajima ,  Keishin Yamazaki ,  Sadao Nakashima

发明人： Akira Morohashi ,  Iwao Nakamura ,  Ryota Sasajima ,  Keishin Yamazaki ,  Sadao Nakashima

IPC分类号： F27D1/18 ,  F27D3/16

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.

摘要翻译： 提供一种能够实现保持高度安全性的高精度加工的热处理装置及其制造方法。 热处理装置包括用于处理基板的反应管; 用于支撑反应管的歧管; 和设置在反应管周围的加热器以加热反应管内部的加热器; 其中所述反应管和所述歧管在它们的连续平坦表面彼此接触时彼此接触; 盖构件被设置成从外侧覆盖反应管和歧管之间的接触部分; 并且盖构件设置有至少一个与形成在盖构件，反应管和歧管之间的空间连通的气体供给口或排气口。

公开(公告)号：US07865070B2

公开(公告)日：2011-01-04

申请号：US11578963

申请日：2005-03-22

申请人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

发明人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

IPC分类号： A21B2/00

CPC分类号： H01L21/67306 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67309

摘要： To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

摘要翻译： 防止由于突起造成的两个滑动，以及由于过度平滑而产生的粘合力引起的滑移。 热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。 船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。 晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra为1μm〜1000μm。 可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

公开(公告)号：US20100148415A1

公开(公告)日：2010-06-17

申请号：US12654837

申请日：2010-01-06

申请人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

发明人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

IPC分类号： B23Q3/00

CPC分类号： H01L21/67306 ,  H01L21/67098 ,  H01L21/67309

摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.

摘要翻译： 热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置， 提供。 基体支撑体由主体部分和支撑部分形成。 在主体部分中，多个放置部分平行延伸，并且在放置部分上设置支撑部分。 将基板放置在支撑部上。 支撑部分具有比基板的平面的面积小的面积，并且由厚度大于基板厚度的硅板形成，从而减少热处理期间的变形。 支撑部分由硅制成，并且在支撑部分的基片放置面上形成涂有碳化硅（SiC）的层。

公开(公告)号：US20080267598A1

公开(公告)日：2008-10-30

申请号：US11578963

申请日：2005-03-22

申请人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

发明人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

IPC分类号： A21B2/00

CPC分类号： H01L21/67306 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67309

摘要： [Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.[Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

摘要翻译： [问题]防止由于凸起造成的两个滑移，以及由于过度平滑而产生的粘合力引起的滑移。 解决问题的手段热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。 船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。 晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra设定为1μm〜1000μm。 可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

公开(公告)号：US09074284B2

公开(公告)日：2015-07-07

申请号：US12768191

申请日：2010-04-27

申请人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

发明人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/32 ,  C23C16/44 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

CPC分类号： C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

摘要： Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the process chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

摘要翻译： 提供一种能够在多个基板上形成均匀厚度的膜的热处理装置。 所述热处理装置包括：处理室，被配置为在晶片上生长碳化硅（SiC）膜;舟状结构，用于在所述晶片垂直布置且大致水平定向的状态下保持多个晶片，以将所述晶片保持在所述晶片中 处理室，安装在处理室中的加热单元和构造成供应反应气体的气体供给喷嘴。 加热单元包括构造成覆盖船的至少一部分的基座和设置在船和基座之间的基座壁。