摘要:
A solar cell includes a compound semiconductor, which is a laminated film having compound semiconductor layers, and low melting point glass. When the solar cell is heated by fire, the low melting point glass melts to seal the compound semiconductor so that toxic substances contained in the compound semiconductor are not released into the air.
摘要:
The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.
摘要:
The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.
摘要:
A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.
摘要:
A thin film solar cell having high conversion efficiency is provided. The band gap of the thin film solar cell can be controlled while keeping the quality superior to conventional solar cells. The absorber layer for photovoltaic energy conversion is a Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution where X and Y are in the range of the following Equation:0.317+0.176Y.gtoreq.X.gtoreq.0.117+0.176Y1>X+Y>0Y>0,The Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution has a specific chalcopyrite type crystal structure and its lattice constant ratio of c-axis to a-axis is extremely close to two. It is most preferable that the band gap is 1.4 eV, X is 0.3, and Y is 0.4, since the conversion efficiency of a homojunction solar cell will then become a maximum.
摘要:
There is provided an X-ray imaging apparatus which images a specimen. The X-ray imaging apparatus comprises: an X-ray source; a diffraction grating configured to diffract an X-ray from the X-ray source; an X-ray detector configured to detect the X-ray diffracted by the diffraction grating; and a calculator configured to calculate phase information of the specimen on the basis of an intensity distribution of the X-ray detected by the X-ray detector, wherein the calculator obtains a spatial frequency spectrum from the plural intensity distributions, and calculates the phase information from the obtained spatial frequency spectrum.
摘要:
There is provided an X-ray imaging apparatus which images a specimen. The X-ray imaging apparatus comprises: an X-ray source; a diffraction grating configured to diffract an X-ray from the X-ray source; an X-ray detector configured to detect the X-ray diffracted by the diffraction grating; and a calculator configured to calculate phase information of the specimen on the basis of an intensity distribution of the X-ray detected by the X-ray detector, wherein the calculator obtains a spatial frequency spectrum from the plural intensity distributions, and calculates the phase information from the obtained spatial frequency spectrum.
摘要:
A Talbot interferometer includes a diffraction grating, an image pickup device, a moving unit configured to move at least one of the diffraction grating and the image pickup device in an optical axis direction of the test object, and a computer configured to adjust a position of the at least one of the diffraction grating and the image pickup device using the moving unit so that a Talbot condition can be met, based on a spatial frequency spectrum obtained from a plurality of interference fringes captured by the image pickup device while moving the at least one of the diffraction grating and the image pickup device using the moving unit.
摘要:
The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.
摘要:
The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.