公开(公告)号：US07883750B2

公开(公告)日：2011-02-08

申请号：US10774454

申请日：2004-02-10

申请人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

发明人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/26 ,  C23C16/515 ,  H01J2237/32

摘要： An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrate 6 is mounted on at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 under a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material “A” including a carbon source to generate discharge plasma. A thin film 7 is thus formed on the substrate 6. The pulse voltage has a pulse duration of 10 to 1000 nsec.

摘要翻译： 本发明的目的是提供一种通过在100托或更高的较高压力的气氛中使用包含碳源的气态原料来产生放电等离子体而形成优质品质的方法。 基板6安装在相对电极4和5中的至少一个上。在包含碳源的气态原料“A”的气氛中，在100〜1600乇的压力下，在对置电极4,5上施加脉冲电压 以产生放电等离子体。 因此，在基板6上形成薄膜7.脉冲电压的脉冲持续时间为10〜1000nsec。

公开(公告)号：US20080282981A1

公开(公告)日：2008-11-20

申请号：US11976023

申请日：2007-10-19

申请人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

发明人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

IPC分类号： C23C16/453

CPC分类号： C23C16/515 ,  C23C16/045

摘要： An object of the present invention is to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film 22 is produced on an inner wall surface 20b of a substrate 20 facing a space 23 formed in the substrate 20. The substrate 20 is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space 23 and a pulse voltage is applied on the substrate 20 without substantially applying a direct bias voltage on the substrate 20 to form the thin film on the inner wall surface 20b.

摘要翻译： 本发明的目的是在通过等离子体CVD在面对形成在衬底中的空间的内壁表面上形成薄膜的工艺中可再现地形成薄膜。 在面向形成在基板20中的空间23的基板20的内壁面20b上产生薄膜22。 衬底20被包含在用于等离子体CVD工艺的腔室中。 然后将用于等离子体反应的气体流入空间23，并且在衬底20上施加脉冲电压，而基本上不施加直接偏置电压，以在内壁表面20b上形成薄膜。

公开(公告)号：US07303789B2

公开(公告)日：2007-12-04

申请号：US10766806

申请日：2004-01-30

申请人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

发明人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

IPC分类号： H05H1/24

CPC分类号： C23C16/515 ,  C23C16/045

摘要： Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on the substrate to form the thin film on the inner wall surface.

摘要翻译： 提供了在通过等离子体CVD在面对形成在衬底中的空间的内壁表面上形成薄膜的工艺中可再现地形成薄膜的方法。 在面向形成在基板中的空间的基板的内壁表面上产生薄膜。 基板被包含在用于等离子体CVD工艺的室中。 然后将用于等离子体反应的气体流入空间，并且在基板上施加脉冲电压，而基本上不施加直接偏置电压，以在内壁表面上形成薄膜。

公开(公告)号：US20060035083A1

公开(公告)日：2006-02-16

申请号：US11194619

申请日：2005-08-02

申请人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo

发明人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo

IPC分类号： H05H1/24 ,  B32B9/00

CPC分类号： C23C16/515 ,  C23C16/26 ,  Y10T428/30

摘要： A substrate 6 is provided over at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 in an atmosphere containing gaseous raw material including a carbon source to generate discharge plasma so that a thin film 7 is formed on the substrate 6. The applied pulse voltage includes positive pulse and negative pulses. The positive pulse has a pulse half value width of 1000 nsec or shorter and said negative pulse has a pulse half value width of 1000 nsec or shorter.

摘要翻译： 基板6设置在相对电极4和5中的至少一个上。 在包含碳源的气态原料的气氛中，在相对电极4和5上施加脉冲电压以产生放电等离子体，从而在基板6上形成薄膜7。 所施加的脉冲电压包括正脉冲和负脉冲。 正脉冲具有1000nsec以下的脉冲半值宽度，所述负脉冲的脉冲半值宽度为1000nsec以下。

公开(公告)号：US20080122368A1

公开(公告)日：2008-05-29

申请号：US11843771

申请日：2007-08-23

申请人： Takao Saito ,  Yoshimasa Kondo ,  Tatsuya Terazawa

发明人： Takao Saito ,  Yoshimasa Kondo ,  Tatsuya Terazawa

IPC分类号： H05H1/00

CPC分类号： H01J37/32027 ,  H01L21/28202 ,  H01L21/31138 ,  H01L21/3146 ,  H01L21/3185

摘要： A direct current pulse voltage is applied on a treatment gas to generate a discharge plasma. The duty ratio of the direct current pulse voltage is controlled within the range of 0.0001% or more and 8.0% or less. The rise time of the direct current pulse voltage is controlled in the range of not lower than 0.1 V/nsec and not higher than 10000 V/nsec. Alternatively, a positive pulse and a negative pulse are applied from a single power source for performing the discharge plasma and the impurity implantation.

摘要翻译： 在处理气体上施加直流脉冲电压以产生放电等离子体。 直流脉冲电压的占空比控制在0.0001％以上且8.0％以下的范围内。 直流脉冲电压的上升时间控制在不低于0.1V / nsec且不高于10000V / ns的范围内。 或者，从用于执行放电等离子体和杂质注入的单个电源施加正脉冲和负脉冲。

公开(公告)号：US07914692B2

公开(公告)日：2011-03-29

申请号：US11843771

申请日：2007-08-23

申请人： Takao Saito ,  Yoshimasa Kondo ,  Tatsuya Terazawa

发明人： Takao Saito ,  Yoshimasa Kondo ,  Tatsuya Terazawa

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01J37/32027 ,  H01L21/28202 ,  H01L21/31138 ,  H01L21/3146 ,  H01L21/3185

摘要： A direct current pulse voltage is applied on a treatment gas to generate a discharge plasma. The duty ratio of the direct current pulse voltage is controlled within the range of 0.0001% or more and 8.0% or less. The rise time of the direct current pulse voltage is controlled in the range of not lower than 0.1 V/nsec and not higher than 10000 V/nsec. Alternatively, a positive pulse and a negative pulse are applied from a single power source for performing the discharge plasma and the impurity implantation.

摘要翻译： 在处理气体上施加直流脉冲电压以产生放电等离子体。 直流脉冲电压的占空比控制在0.0001％以上且8.0％以下的范围内。 直流脉冲电压的上升时间控制在不低于0.1V / nsec且不高于10000V / ns的范围内。 或者，从用于执行放电等离子体和杂质注入的单个电源施加正脉冲和负脉冲。

公开(公告)号：US20070175587A1

公开(公告)日：2007-08-02

申请号：US11653833

申请日：2007-01-17

申请人： Takao Saito ,  Tatsuya Terazawa ,  Yoshimasa Kondo

发明人： Takao Saito ,  Tatsuya Terazawa ,  Yoshimasa Kondo

IPC分类号： H01L21/306

CPC分类号： H01J37/32146 ,  H01J37/32091

摘要： A pulse voltage is applied on a process gas to generate discharge plasma. The pulse voltage has a duty ratio controlled in a range of 0.001 percent or more and 8.0 percent or less. Preferably, the discharge plasma has an electron density of 1×1010 cm−3 or larger and an electron temperature of 1.5 eV or lower at a supplied power of 1.0 W/cm2 or more per a unit area of a discharge electrode.

摘要翻译： 对工艺气体施加脉冲电压以产生放电等离子体。 脉冲电压的占空比控制在0.001％以上且8.0％以下的范围内。 优选地，放电等离子体的供电功率为1.0W / cm 2，电子密度为1×10 9 cm -3以上，电子温度为1.5eV以下， 每放电电极的单位面积的SUP> 2以上。

公开(公告)号：US07750574B2

公开(公告)日：2010-07-06

申请号：US11653833

申请日：2007-01-17

申请人： Takao Saito ,  Tatsuya Terazawa ,  Yoshimasa Kondo

发明人： Takao Saito ,  Tatsuya Terazawa ,  Yoshimasa Kondo

IPC分类号： H05B31/26

CPC分类号： H01J37/32146 ,  H01J37/32091

摘要： A pulse voltage is applied on a process gas to generate discharge plasma. The pulse voltage has a duty ratio controlled in a range of 0.001 percent or more and 8.0 percent or less. Preferably, the discharge plasma has an electron density of 1×1010 cm−3 or larger and an electron temperature of 1.5 eV or lower at a supplied power of 1.0 W/cm2 or more per a unit area of a discharge electrode.

摘要翻译： 对工艺气体施加脉冲电压以产生放电等离子体。 脉冲电压的占空比控制在0.001％以上且8.0％以下的范围内。 优选地，放电等离子体的放电电极的单位面积的1.0W / cm 2以上的供给功率的电子密度为1×10 10 cm -3以上，电子温度为1.5eV以下。

公开(公告)号：US08408630B2

公开(公告)日：2013-04-02

申请号：US12859989

申请日：2010-08-20

申请人： Takao Saito ,  Toshinao Wada ,  Masaki Sugimoto

发明人： Takao Saito ,  Toshinao Wada ,  Masaki Sugimoto

IPC分类号： B60N2/10

CPC分类号： B60N2/366 ,  B60N2/2245

摘要： A slide member is slidable along a slide rail provided at a vehicle-body side portion. When lock pawls provided at the slide member are engaged with the slide rail, the slide member is locked. The slide member is unlocked by operating an operation cable connected to the lock pawls. The operation cable is fitted to a fitting portion of an attachment bracket connected to the slide rail. A portion from a fixed portion fixed to the fitting portion to a movable portion (one end portion) extends through a region where a non-contact portion is disposed, and does not contact the non-contact portion. The movable portion is connected to the slide member and moved integrally with the slide member.

摘要翻译： 滑动构件可沿着设置在车体侧部分的滑轨滑动。 当设置在滑动构件上的锁定爪与滑轨接合时，滑动构件被锁定。 通过操作连接到锁定爪的操作电缆来解锁滑动构件。 操作电缆安装到连接到滑轨的附件支架的装配部分。 从固定到配合部分的固定部分到可移动部分（一个端部）的部分延伸穿过非接触部分设置的区域，并且不接触非接触部分。 可动部与滑动部件连接，与滑动部件一体移动。

公开(公告)号：US20090246942A1

公开(公告)日：2009-10-01

申请号：US12411507

申请日：2009-03-26

申请人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

发明人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

IPC分类号： H01L21/20 ,  C23C16/503

CPC分类号： H01J37/32568 ,  C23C16/24 ,  C23C16/515 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/3244

摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

摘要翻译： 一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。 随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从 气体出口，从而将室中的压力控制在大于1kPa的压力。 然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。