公开(公告)号：US20120189823A1

公开(公告)日：2012-07-26

申请号：US13394537

申请日：2010-09-10

申请人： Naoto Ohtake ,  Makoto Matsuo ,  Yoshinao Iwamoto

发明人： Naoto Ohtake ,  Makoto Matsuo ,  Yoshinao Iwamoto

IPC分类号： B32B3/10 ,  B05D3/06

CPC分类号： C23C16/042 ,  C23C14/04 ,  C23C14/042 ,  C23C16/04 ,  C23C16/26 ,  Y10T428/24802

摘要： The problems in accordance with the present invention are: to provide a DLC film, wherein a protective film having a segmented shape is easily formed, quality control of the protective film is improved, segmented shapes with a high degree of freedom (that are complicated) are possible, and the application of the DLC film is possible not only to two-dimensional shapes but also to three-dimensional shapes; and to provide a method for forming the DLC film. As solutions to the problems, there are provided a protective film and a method for producing the protective film, characterized by, when forming on a substrate the protective film having a segmented shape formed by depositing a film so that the film is formed divided into segments, masking the substrate using a drawing material so that segments having predetermined shapes are obtained, thereafter depositing the protective film, and then removing the masked part to form a spacing between segments.

摘要翻译： 根据本发明的问题是：提供一种DLC膜，其中容易形成具有分段形状的保护膜，提高了保护膜的质量控制，高自由度（复杂）的分段形状， 是可能的，并且DLC膜的应用不仅可以是二维形状，而且也可以是三维形状; 并提供形成DLC膜的方法。 作为这些问题的解决方案，提供了保护膜和保护膜的制造方法，其特征在于，在基板上形成具有通过沉积膜形成的分段形状的保护膜，使得膜形成为分段 使用拉伸材料掩蔽基板，从而获得具有预定形状的段，然后沉积保护膜，然后除去掩模部分以在段之间形成间隔。

公开(公告)号：US20110104241A1

公开(公告)日：2011-05-05

申请号：US13000635

申请日：2009-06-22

申请人： Naoto Ohtake ,  Yuuki Koide

发明人： Naoto Ohtake ,  Yuuki Koide

IPC分类号： A61K9/70 ,  A61K31/70 ,  A61K9/00

CPC分类号： A61K9/7053 ,  A61K9/0014 ,  A61K9/7061 ,  A61K9/7069 ,  A61K47/14 ,  A61K47/20 ,  A61K47/26

摘要： Provided are a percutaneous absorption enhancer excellent in an enhancing effect on percutaneous absorption of a wide range of drugs and excellent in compatibility with an adhesive base, and a transdermal preparation using the percutaneous absorption enhancer. The percutaneous absorption enhancer includes a sulfosuccinate or a salt thereof and an alkyl glycoside or an alkyl thioglycoside.

摘要翻译： 提供了对广泛的药物的经皮吸收增强效果优异的经皮吸收增强剂和与粘合剂基质的相溶性优异的透皮吸收增强剂，以及使用经皮吸收促进剂的透皮制剂。 经皮吸收增强剂包括磺基琥珀酸盐或其盐和烷基糖苷或烷基硫代糖苷。

公开(公告)号：US09506143B2

公开(公告)日：2016-11-29

申请号：US13394537

申请日：2010-09-10

申请人： Naoto Ohtake ,  Makoto Matsuo ,  Yoshinao Iwamoto

发明人： Naoto Ohtake ,  Makoto Matsuo ,  Yoshinao Iwamoto

IPC分类号： B05D3/06 ,  C23C16/04 ,  C23C16/26 ,  C23C14/04

摘要： The problems in accordance with the present invention are: to provide a DLC film, wherein a protective film having a segmented shape is easily formed, quality control of the protective film is improved, segmented shapes with a high degree of freedom (that are complicated) are possible, and the application of the DLC film is possible not only to two-dimensional shapes but also to three-dimensional shapes; and to provide a method for forming the DLC film. As solutions to the problems, there are provided a protective film and a method for producing the protective film, characterized by, when forming on a substrate the protective film having a segmented shape formed by depositing a film so that the film is formed divided into segments, masking the substrate using a drawing material so that segments having predetermined shapes are obtained, thereafter depositing the protective film, and then removing the masked part to form a spacing between segments.

摘要翻译： 根据本发明的问题是：提供一种DLC膜，其中容易形成具有分段形状的保护膜，提高了保护膜的质量控制，高自由度（复杂）的分段形状， 是可能的，并且DLC膜的应用不仅可以是二维形状，而且也可以是三维形状; 并提供形成DLC膜的方法。 作为这些问题的解决方案，提供了保护膜和保护膜的制造方法，其特征在于，在基板上形成具有通过沉积膜形成的分段形状的保护膜，使得膜形成为分段 使用拉伸材料掩蔽基板，从而获得具有预定形状的段，然后沉积保护膜，然后除去掩模部分以在段之间形成间隔。

公开(公告)号：US20110045208A1

公开(公告)日：2011-02-24

申请号：US12867044

申请日：2009-02-10

申请人： Naoto Ohtake ,  Makoto Matsuo ,  Yoshinao Iwamoto

发明人： Naoto Ohtake ,  Makoto Matsuo ,  Yoshinao Iwamoto

IPC分类号： C23C16/503 ,  C23C16/26

CPC分类号： C23C16/26 ,  C23C16/042 ,  C23C16/517 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32871 ,  H01J2237/2001

摘要： The present invention relates to a diamond-like carbon film forming apparatus and a method of forming a diamond-like carbon film.A diamond-like carbon film forming apparatus using plasma chemical vapor deposition of the present invention is provided with a member (4) comprised of a substrate (2) surrounded by a conductive mask material (3) and a DC single pulse power supply (6) and superimposition DC power supply (26) and/or high frequency power supply (7) for supplying power voltage with the wall of the chamber (5) of the diamond-like carbon film forming apparatus, which apparatus selects and applies to the member (4) either a negative single pulse voltage from the DC single pulse power supply (6) and said superimposition DC power supply (26) or a high frequency voltage of the high frequency power supply (7) so as to form a segment structure diamond-like carbon film on the substrate (2) surrounded by the mask material (3).

摘要翻译： 本发明涉及一种类金刚石碳膜形成装置和形成类金刚石碳膜的方法。 使用本发明的等离子体化学气相沉积的类金刚石碳膜形成装置设置有由导电掩模材料（3）和DC单脉冲电源（6）围绕的基板（2）构成的部件（4） ）和用于向菱形碳膜形成装置的室（5）的壁提供电力电压的DC电源（26）和/或高频电源（7），该设备选择并应用于该成员 （4）来自直流单脉冲电源（6）的负单脉冲电压和所述叠加直流电源（26）或高频电源（7）的高频电压，以形成段结构金刚石 在由掩模材料（3）包围的基板（2）上的碳膜。

公开(公告)号：US07883750B2

公开(公告)日：2011-02-08

申请号：US10774454

申请日：2004-02-10

申请人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

发明人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/26 ,  C23C16/515 ,  H01J2237/32

摘要： An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrate 6 is mounted on at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 under a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material “A” including a carbon source to generate discharge plasma. A thin film 7 is thus formed on the substrate 6. The pulse voltage has a pulse duration of 10 to 1000 nsec.

摘要翻译： 本发明的目的是提供一种通过在100托或更高的较高压力的气氛中使用包含碳源的气态原料来产生放电等离子体而形成优质品质的方法。 基板6安装在相对电极4和5中的至少一个上。在包含碳源的气态原料“A”的气氛中，在100〜1600乇的压力下，在对置电极4,5上施加脉冲电压 以产生放电等离子体。 因此，在基板6上形成薄膜7.脉冲电压的脉冲持续时间为10〜1000nsec。

公开(公告)号：US08771724B2

公开(公告)日：2014-07-08

申请号：US13000635

申请日：2009-06-22

申请人： Naoto Ohtake ,  Yuuki Koide

发明人： Naoto Ohtake ,  Yuuki Koide

IPC分类号： A61K9/70

CPC分类号： A61K9/7053 ,  A61K9/0014 ,  A61K9/7061 ,  A61K9/7069 ,  A61K47/14 ,  A61K47/20 ,  A61K47/26

摘要： Provided are a percutaneous absorption enhancer excellent in an enhancing effect on percutaneous absorption of a wide range of drugs and excellent in compatibility with an adhesive base, and a transdermal preparation using the percutaneous absorption enhancer. The percutaneous absorption enhancer includes a sulfosuccinate or a salt thereof and an alkyl glycoside or an alkyl thioglycoside.

摘要翻译： 提供了对广泛的药物的经皮吸收增强效果优异的经皮吸收增强剂和与粘合剂基质的相溶性优异的透皮吸收增强剂，以及使用经皮吸收促进剂的透皮制剂。 经皮吸收增强剂包括磺基琥珀酸盐或其盐和烷基糖苷或烷基硫代糖苷。

公开(公告)号：US20080282981A1

公开(公告)日：2008-11-20

申请号：US11976023

申请日：2007-10-19

申请人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

发明人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

IPC分类号： C23C16/453

CPC分类号： C23C16/515 ,  C23C16/045

摘要： An object of the present invention is to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film 22 is produced on an inner wall surface 20b of a substrate 20 facing a space 23 formed in the substrate 20. The substrate 20 is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space 23 and a pulse voltage is applied on the substrate 20 without substantially applying a direct bias voltage on the substrate 20 to form the thin film on the inner wall surface 20b.

摘要翻译： 本发明的目的是在通过等离子体CVD在面对形成在衬底中的空间的内壁表面上形成薄膜的工艺中可再现地形成薄膜。 在面向形成在基板20中的空间23的基板20的内壁面20b上产生薄膜22。 衬底20被包含在用于等离子体CVD工艺的腔室中。 然后将用于等离子体反应的气体流入空间23，并且在衬底20上施加脉冲电压，而基本上不施加直接偏置电压，以在内壁表面20b上形成薄膜。

公开(公告)号：US07303789B2

公开(公告)日：2007-12-04

申请号：US10766806

申请日：2004-01-30

申请人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

发明人： Takao Saito ,  Yukinori Nakamura ,  Yoshimasa Kondo ,  Naoto Ohtake

IPC分类号： H05H1/24

CPC分类号： C23C16/515 ,  C23C16/045

摘要： Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on the substrate to form the thin film on the inner wall surface.

摘要翻译： 提供了在通过等离子体CVD在面对形成在衬底中的空间的内壁表面上形成薄膜的工艺中可再现地形成薄膜的方法。 在面向形成在基板中的空间的基板的内壁表面上产生薄膜。 基板被包含在用于等离子体CVD工艺的室中。 然后将用于等离子体反应的气体流入空间，并且在基板上施加脉冲电压，而基本上不施加直接偏置电压，以在内壁表面上形成薄膜。