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42 条记录 (耗时 0.027 秒)

    1,3-benzoxathiole derivatives
    2.
    发明授权
    1,3-benzoxathiole derivatives 失效
    1,3-苯并硫杂衍生物

    公开(公告)号：US4691027A

    公开(公告)日：1987-09-01

    申请号：US716171

    申请日：1985-03-26

    申请人： Takao Yoshioka ,  Eiichi Kitazawa ,  Mitsuo Yamazaki ,  Yoshio Iizuka

    发明人： Takao Yoshioka ,  Eiichi Kitazawa ,  Mitsuo Yamazaki ,  Yoshio Iizuka

    IPC分类号： A61K31/39 ,  A61K31/695 ,  A61P3/06 ,  A61P7/02 ,  A61P9/00 ,  A61P37/08 ,  C07D327/04 ,  C07F7/18 ,  C07D497/00

    CPC分类号： C07C323/00 ,  C07D327/04 ,  C07F7/1856

    摘要： Compounds formula (I): ##STR1## in which: R.sup.1 represents a hydrogen atom, an alkyl group, a substituted alkyl group, a C.sub.2 -C.sub.6 alkenyl group, an aryl group, a substituted aryl group or an alkoxycarbonyl group wherein the alkoxy part has from 1 to 6 carbon atoms; R.sup.2 represents a hydrogen atom, a C.sub.1 -C.sub.6 alkyl group or a C.sub.3 or C.sub.4 alkenyl group; R.sup.3 represents a hydrogen atom or a C.sub.1 -C.sub.6 alkyl group; R.sup.4 represents a hydroxy group, a C.sub.1 -C.sub.21 aliphatic acyloxy group or a carbocyclic aryl carboxylic acyloxy group; R.sup.5 represents a C.sub.1 -C.sub.12 alkyl group, a C.sub.1 -C.sub.6 alkoxy group, a hydroxy group, a C.sub.1 -C.sub.7 aliphatic acyloxy group or a carbocyclic aryl carboxylic acyloxy group; R.sup.6 represents a hydrogen atom, a C.sub.1 -C.sub.6 alkyl group or a C.sub.1 -C.sub.6 alkoxy group; and n is 0, 1, or 2; and pharmaceutically acceptable salts thereof are valuable in the treatment of circulatory disorders and allergies.

    摘要翻译： 化合物式（I）：其中：R 1表示氢原子，烷基，取代的烷基，C 2 -C 6烯基，芳基，取代的芳基或烷氧基羰基，其中 烷氧基部分具有1至6个碳原子; R2表示氢原子，C1-C6烷基或C3或C4链烯基; R3表示氢原子或C1-C6烷基; R4代表羟基，C1-C21脂族酰氧基或碳环芳基羧酰氧基; R5表示C1-C12烷基，C1-C6烷氧基，羟基，C1-C7脂族酰氧基或碳环芳基羧酰氧基; R6表示氢原子，C1-C6烷基或C1-C6烷氧基; 并且n为0,1或2; 及其药学上可接受的盐在治疗循环障碍和过敏中是有价值的。

    Thiazolidine derivatives, their preparation and compositions containing them
    4.
    发明授权
    Thiazolidine derivatives, their preparation and compositions containing them 失效
    噻唑烷衍生物，其制备方法和含有它们的组合物

    公开(公告)号：US4572912A

    公开(公告)日：1986-02-25

    申请号：US644996

    申请日：1984-08-28

    申请人： Takao Yoshioka ,  Eiici Kitazawa ,  Tomoyuki Kurumada ,  Mitsuo Yamazaki ,  Kazou Hasegawa

    发明人： Takao Yoshioka ,  Eiici Kitazawa ,  Tomoyuki Kurumada ,  Mitsuo Yamazaki ,  Kazou Hasegawa

    IPC分类号： C07D311/72 ,  A61K31/425 ,  A61P3/06 ,  C07D311/58 ,  C07D407/12 ,  C07D417/12 ,  C07D417/14

    CPC分类号： C07D417/12 ,  C07D311/58 ,  C07D417/14

    摘要： The compounds of formula (I): ##STR1## [in which: R.sup.1 and R.sup.2 are the same or different and each represents hydrogen or C.sub.1 -C.sub.5 alkyl;R.sup.3 represents hydrogen, an acyl group, a (C.sub.1 -C.sub.6 alkoxy)carbonyl group or an aralkyloxycarbonyl group;R.sup.4 and R.sup.5 are the same or different and each represents hydrogen, C.sub.1 -C.sub.5 alkyl or C.sub.1 -C.sub.5 alkoxy, or R.sup.4 and R.sup.5 together represent a C.sub.1 14 C.sub.4 alkylenedioxy group;n is 1, 2 or 3;W represents the --CH.sub.2 --, >CO or >CH--OR.sup.6 group (in which R.sup.6 represents any one of the atoms or groups defined for R.sup.3 and may be the same as or different from R.sup.3); andY and Z are the same or different and each represents oxygen or imino]and pharmaceutically acceptable salts thereof have various valuable therapeutic effects on the blood system and may be prepared by a process which includes reacting a corresponding halopropionic acid derivative with thiourea.

    摘要翻译： 式（I）的化合物：其中：R 1和R 2相同或不同，各自表示氢或C 1 -C 5烷基; R3表示氢，酰基，（C1-C6烷氧基）羰基或芳烷氧基羰基; R4和R5相同或不同，各自表示氢，C1-C5烷基或C1-C5烷氧基，或R4和R5一起表示C114 C4亚烷基二氧基; n为1,2或3; W表示-CH 2 - ，> CO或> CH-OR 6基团（其中R 6表示对R 3定义的任何一个原子或基团，可以与R 3相同或不同）; 并且Y和Z相同或不同并且各自表示氧或亚氨基]及其药学上可接受的盐对血液系统具有各种有价值的治疗作用，并且可以通过包括使相应的卤代丙酸衍生物与硫脲反应的方法来制备。

    Digital signal receiver
    5.
    发明授权
    Digital signal receiver 有权
    数字信号接收机

    公开(公告)号：US07957464B2

    公开(公告)日：2011-06-07

    申请号：US12759535

    申请日：2010-04-13

    申请人： Mitsuo Yamazaki

    发明人： Mitsuo Yamazaki

    IPC分类号： H03K7/04

    CPC分类号： H04L25/4902 ,  H04L25/4908

    摘要： A digital signal receiver including: a signal edge detector configured to receive a signal including a code and detect an edge of the signal; a reference point detector configured to detect a reference point for pulse width detection from a rising time point or falling time point of the edge detected by the signal edge detector; a pulse width detector configured to detect a pulse width from the rising time point or falling time point of the edge and the reference point; a sampling point determination module configured to generate a histogram of the pulse width and determines a sampling point of the code based on an analysis result of the histogram; and a sampling module configured to perform a sampling of the code based on the sampling point determined by the sampling point determination module.

    摘要翻译： 一种数字信号接收机，包括：信号边缘检测器，被配置为接收包括码的信号并检测信号的边缘; 参考点检测器，被配置为从由信号边缘检测器检测的边沿的上升时间点或下降时间点检测用于脉冲宽度检测的参考点; 脉冲宽度检测器，被配置为从所述边缘和所述参考点的上升时间点或下降时间点检测脉冲宽度; 采样点确定模块，被配置为生成所述脉冲宽度的直方图，并且基于所述直方图的分析结果确定所述代码的采样点; 以及采样模块，被配置为基于由所述采样点确定模块确定的采样点来执行所述代码的采样。

    Silicon thin-film and method of forming silicon thin-film
    6.
    发明授权
    Silicon thin-film and method of forming silicon thin-film 有权
    硅薄膜和硅薄膜的形成方法

    公开(公告)号：US07776670B2

    公开(公告)日：2010-08-17

    申请号：US12304957

    申请日：2007-05-30

    申请人： Masamichi Yamashita ,  Takashi Iwade ,  Kohshi Taguchi ,  Mitsuo Yamazaki

    发明人： Masamichi Yamashita ,  Takashi Iwade ,  Kohshi Taguchi ,  Mitsuo Yamazaki

    IPC分类号： H01L21/00

    CPC分类号： C23C16/30 ,  C23C16/401 ,  H01L51/5256

    摘要： Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened crack and/or flaking, and providing a method for forming the silicon thin film.Solving Means A method for forming a silicon thin film according to the present invention is a method for forming a silicon thin film having isolation function or barrier function, on a substrate K using CVD method, and comprises a step for forming a first thin film on the substrate using plasma CVD method employing gas containing hydrogen element and a gas containing silicon element; a step for forming a second thin film using plasma CVD method employing a gas containing nitrogen element and a gas containing silicon element; and a step for forming a third thin film using plasma CVD method employing a gas containing oxygen element and a gas containing silicon element.

    摘要翻译： 问题提供能够防止在基板上形成的电子器件的损坏的硅膜可以防止装置排列变大，可以提高硅薄膜与基板的一致性，并且几乎不发生裂纹和/或 剥离，提供形成硅薄膜的方法。 解决方法根据本发明的形成硅薄膜的方法是使用CVD法在基板K上形成具有隔离功能或阻挡功能的硅薄膜的方法，并且包括用于形成第一薄膜的步骤 使用等离子体CVD法的基板，其使用含有氢元素的气体和含有硅元素的气体; 使用含有氮元素的气体和含有硅元素的气体的等离子体CVD法形成第二薄膜的工序; 以及使用含有氧元素的气体和含有硅元素的气体的等离子体CVD法形成第三薄膜的工序。

    SILICON THIN-FILM AND METHOD OF FORMING SILICON THIN-FILM
    10.
    发明申请
    SILICON THIN-FILM AND METHOD OF FORMING SILICON THIN-FILM 有权
    硅薄膜和形成硅薄膜的方法

    公开(公告)号：US20090321895A1

    公开(公告)日：2009-12-31

    申请号：US12304957

    申请日：2007-05-30

    申请人： Masamichi Yamashita ,  Takashi Iwade ,  Kohshi Taguchi ,  Mitsuo Yamazaki

    发明人： Masamichi Yamashita ,  Takashi Iwade ,  Kohshi Taguchi ,  Mitsuo Yamazaki

    IPC分类号： H01L21/31 ,  H01L29/06

    CPC分类号： C23C16/30 ,  C23C16/401 ,  H01L51/5256

    摘要： Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened crack and/or flaking, and providing a method for forming the silicon thin film.Solving Means A method for forming a silicon thin film according to the present invention is a method for forming a silicon thin film having isolation function or barrier function, on a substrate K using CVD method, and comprises a step for forming a first thin film on the substrate using plasma CVD method employing gas containing hydrogen element and a gas containing silicon element; a step for forming a second thin film using plasma CVD method employing a gas containing nitrogen element and a gas containing silicon element; and a step for forming a third thin film using plasma CVD method employing a gas containing oxygen element and a gas containing silicon element.

    摘要翻译： 问题提供能够防止在基板上形成的电子器件的损坏的硅膜可以防止装置排列变大，可以提高硅薄膜与基板的一致性，并且几乎不发生裂纹和/或 剥离，提供形成硅薄膜的方法。 解决方法根据本发明的形成硅薄膜的方法是使用CVD法在基板K上形成具有隔离功能或阻挡功能的硅薄膜的方法，并且包括用于形成第一薄膜的步骤 使用等离子体CVD法的基板，其使用含有氢元素的气体和含有硅元素的气体; 使用含有氮元素的气体和含有硅元素的气体的等离子体CVD法形成第二薄膜的工序; 以及使用含有氧元素的气体和含有硅元素的气体的等离子体CVD法形成第三薄膜的工序。