摘要:
An electrically conductive bonding film useful in bonding an IC or LSI with a lead frame. The film comprises (A) a polyimide resin obtained by reacting a tetracarboxylic dianhydride component, in which the content of a tetracarboxylic dianhydride represented by the following formula (I): ##STR1## wherein n stands for an integer of 2-20 amounts to at least 70 mole %, with a diamine; and (B) an electrically conductive filler. Optionally, the film may further comprises a thermosetting resin or an imide compound having at least two thermally-crosslinking imido groups per molecule.
摘要:
Described is an electrically conductive bonding film useful in bonding an IC or LSI with a lead frame. The film comprises (A) a polyimide resin obtained by reacting a tetracarboxylic dianhydride component, in which the content of a tetracarboxylic dianhydride represented by the following formula (I): ##STR1## wherein n stands for an integer of 2-20 amounts to at least 70 mole %, with a diamine; (B) an electrically conductive filler, and a thermoset resin. Optionally, the film may further comprises a thermosetting resin or an imide compound having at least two thermally-crosslinking imido groups per molecule.
摘要:
A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.
摘要:
A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.
摘要:
Provided are a laminating method and machine for successively heating and compression-bonding a film-shaped organic die-bonding material on a leadframe. leadframe 7 is placed on a travelling table 8 and is heated there. A film-shaped organic die-bonding material 2 is punched out and the resulting film is tack-bonded to a die pad on the leadframe. The leadframe with the film tack-bonded thereon is then moved to a position B by the travelling table. After the film is pressed by a compression-bonding element at the position B, a chip is mounted on the film-shaped organic die-bonding material 2. It is therefore possible to bond a film-shaped organic die-bonding material under compression on a leadframe with good productivity but without voids and further to avoid package cracking upon mounting a chip.
摘要:
A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 Mpa or less at a temperature of 259° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.
摘要:
A laminating method and a machine are provided for successively heating and compression-bonding a film-shaped organic die-bonding material on a leadframe with good productivity but without voids and further to avoid package cracking upon mounting a chip. A leadframe 7 is placed on a travelling table 8 and is heated there. A film-shaped organic die-bonding material 2 is punched out and the resulting film is tack-bonded to a die pad on the leadframe. The leadframe with the film tack-bonded thereon is then moved to a position b by the travelling table. After the film is pressed by a compression-bonding element at the position B, a chip is mounted on the film-shaped organic die-bonding material 2.
摘要:
A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.
摘要:
A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.
摘要:
A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.