Rotor for reluctance type rotating machine
    1.
    发明申请
    Rotor for reluctance type rotating machine 有权
    磁阻式旋转电机转子

    公开(公告)号:US20050104468A1

    公开(公告)日:2005-05-19

    申请号:US10897009

    申请日:2004-07-23

    IPC分类号: H02K19/10 H02K1/27 H02K21/12

    CPC分类号: H02K1/2766

    摘要: A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference, the rotor core being divided into a plurality of blocks, the core materials constituting one of at least three blocks having the magnetic concave and convex portions shifted by a predetermined angle in one of a rotating direction of the rotor and a direction opposite the rotating direction of the rotor relative to a center line passing the key, the core materials constituting each one of the blocks located at both ends of the one block having the magnetic concave and convex portions shifted by a predetermined angle in the other of the rotating direction of the rotor and the direction opposite the rotating direction of the rotor relative to a center line passing the key, and a rotational shaft inserted through the central hole of the rotor core, the shaft having a key groove engaging the key of the rotor core.

    摘要翻译: 用于磁阻式旋转电机的转子包括通过堆叠多个环形芯材而形成的转子芯,每个环形芯材料包括在其外周交替形成的磁性凹凸部分和中心通孔,转子芯具有轴向 在外圆周上延伸,所述转子铁芯被分成多个块,所述铁芯材料构成至少三个块中的一个,所述至少三个块中的所述磁性凹凸部在所述转子的旋转方向之一上偏移了预定角度, 方向与转子相对于通过键的中心线的旋转方向相反的方向,构成位于具有磁性凹凸部的一个块的两端的块中的每一个的芯材料偏移预定角度 转子的旋转方向和与转子相对于中心线p的旋转方向相反的方向 并且该转轴通过转子芯的中心孔插入,该轴具有与转子芯的键接合的键槽。

    Rotor for reluctance type rotating machine
    2.
    发明授权
    Rotor for reluctance type rotating machine 有权
    磁阻式旋转电机转子

    公开(公告)号:US07057322B2

    公开(公告)日:2006-06-06

    申请号:US10897009

    申请日:2004-07-23

    IPC分类号: H02K1/27 H02K21/14

    CPC分类号: H02K1/2766

    摘要: A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference, the rotor core being divided into a plurality of blocks, the core materials constituting one of at least three blocks having the magnetic concave and convex portions shifted by a predetermined angle in one of a rotating direction of the rotor and a direction opposite the rotating direction of the rotor relative to a center line passing the key, the core materials constituting each one of the blocks located at both ends of the one block having the magnetic concave and convex portions shifted by a predetermined angle in the other of the rotating direction of the rotor and the direction opposite the rotating direction of the rotor relative to a center line passing the key, and a rotational shaft inserted through the central hole of the rotor core, the shaft having a key groove engaging the key of the rotor core.

    摘要翻译: 用于磁阻式旋转电机的转子包括通过堆叠多个环形芯材而形成的转子芯,每个环形芯材料包括在其外周交替形成的磁性凹凸部分和中心通孔,转子芯具有轴向 在外圆周上延伸,所述转子铁芯被分成多个块,所述铁芯材料构成至少三个块中的一个,所述至少三个块中的所述磁性凹凸部在所述转子的旋转方向之一上偏移了预定角度, 方向与转子相对于通过键的中心线的旋转方向相反的方向,构成位于具有磁性凹凸部的一个块的两端的块中的每一个的芯材料偏移预定角度 转子的旋转方向和与转子相对于中心线p的旋转方向相反的方向 并且该转轴通过转子芯的中心孔插入,该轴具有与转子芯的键接合的键槽。

    Solid-state imaging device and method for fabricating same
    5.
    发明申请
    Solid-state imaging device and method for fabricating same 有权
    固态成像装置及其制造方法

    公开(公告)号:US20070292984A1

    公开(公告)日:2007-12-20

    申请号:US11891535

    申请日:2007-08-10

    IPC分类号: H01L31/18

    摘要: A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

    摘要翻译: 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素,每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层,其沿着各个电荷累积区域的周边设置在阱区域的表面上,并且将各个像素彼此电隔离; 以及扩散层,其设置在元件隔离层下方,并且将各个像素彼此电隔离,所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

    Method of making CCD solid state image sensing device
    7.
    发明授权
    Method of making CCD solid state image sensing device 失效
    制作CCD固态摄像装置的方法

    公开(公告)号:US5476808A

    公开(公告)日:1995-12-19

    申请号:US065681

    申请日:1993-05-11

    摘要: In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

    摘要翻译: 在CCD固体摄像装置中,其中感光部分由在第一P型阱区域和形成在N型硅衬底上的N型杂质扩散区域之间的PN结形成的光电二极管构成,N 型杂质扩散区通过离子注入单一砷(As)形成。 根据该CCD固体摄像装置,可以减少图像感测画面上的亮度缺陷,这是图像感测画面遇到的缺陷之一。 此外,构造PN结的n型杂质扩散区域的尺寸可以减小,并且可以使CCD固态图像感测装置本身尺寸更小。 此外,还提供了一种制造CCD固态图像感测装置的方法。

    Solid-state image pickup device and method for producing the same

    公开(公告)号:US08652864B2

    公开(公告)日:2014-02-18

    申请号:US12903945

    申请日:2010-10-13

    IPC分类号: H01L21/00

    CPC分类号: H01L27/1463 H01L27/14643

    摘要: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

    Solid-state imaging device and method for fabricating same
    9.
    发明授权
    Solid-state imaging device and method for fabricating same 有权
    固态成像装置及其制造方法

    公开(公告)号:US07420234B2

    公开(公告)日:2008-09-02

    申请号:US11318176

    申请日:2005-12-23

    摘要: A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

    摘要翻译: 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素,每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层,其沿着各个电荷累积区域的周边设置在阱区域的表面上,并且将各个像素彼此电隔离; 以及扩散层,其设置在元件隔离层下方,并且将各个像素彼此电隔离,所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

    Solid-state image pickup device and method for producing the same
    10.
    发明授权
    Solid-state image pickup device and method for producing the same 有权
    固体摄像装置及其制造方法

    公开(公告)号:US07217961B2

    公开(公告)日:2007-05-15

    申请号:US11340180

    申请日:2006-01-26

    IPC分类号: H01L31/0328

    CPC分类号: H01L27/1463 H01L27/14643

    摘要: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

    摘要翻译: 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层,电隔离第一隔离扩散层下方的像素,其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中,第一隔离扩散层的内周部分形成 投影区域,具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合,并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。