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    Ink tank and production process of ink tank
    2.
    发明授权
    Ink tank and production process of ink tank 有权
    墨水罐和墨水罐的生产过程

    公开(公告)号：US08529037B2

    公开(公告)日：2013-09-10

    申请号：US13333761

    申请日：2011-12-21

    申请人： Takeho Miyashita ,  Yasuo Kotaki ,  Hitoshi Takada ,  Koichi Kubo ,  Hiroki Hayashi

    发明人： Takeho Miyashita ,  Yasuo Kotaki ,  Hitoshi Takada ,  Koichi Kubo ,  Hiroki Hayashi

    IPC分类号： B41J2/175

    CPC分类号： B41J2/17553

    摘要： An ink tank for being installed in an ink jet recording apparatus to supply ink thereto, including an ink storage portion, one side surface of a casing of the ink tank in which side surface an opening for supplying ink to the apparatus is formed, and a joint member for joining the one side surface to the apparatus by engaging with a connection member of the apparatus. The joint member has a welding portion for being welded to the one side surface along a peripheral portion of the opening, the welding portion corresponding to the peripheral portion; and a hollow portion forming a positioning hole for inserting therein and engaging therewith the connection member for determining a relative position of the apparatus and the one side surface. The hollow portion is provided on the outside of the welding portion and abuts to the one side surface without being welded.

    摘要翻译： 一种用于安装在用于向其供应墨水的喷墨记录装置中的墨水罐，包括墨水储存部分，墨水盒的壳体的一个侧表面，其中形成用于向装置供墨的开口的侧表面，以及 联接构件，用于通过与装置的连接构件接合来将一个侧表面连接到装置。 接头构件具有焊接部，其沿着开口的周边部焊接在一个侧面，焊接部对应于周边部; 以及形成用于插入其中并与其接合的定位孔的中空部分，用于确定装置和一个侧面的相对位置。 中空部设置在焊接部的外侧，并且不会被焊接而与一个侧面抵接。

    WASHING MACHINE
    3.
    发明申请
    WASHING MACHINE 审中-公开
    洗衣机

    公开(公告)号：US20120103026A1

    公开(公告)日：2012-05-03

    申请号：US13383027

    申请日：2010-07-12

    申请人： Makoto Oyama ,  Toshihiko Yasui ,  Koichi Kubo

    发明人： Makoto Oyama ,  Toshihiko Yasui ,  Koichi Kubo

    IPC分类号： D06F33/00 ,  D06F39/08 ,  D06F21/00

    CPC分类号： D06F39/083 ,  D06F33/02 ,  D06F39/004 ,  D06F39/085 ,  D06F2202/02 ,  D06F2202/10 ,  D06F2204/082

    摘要： A washing machine includes a cabinet, an outer tank, an inner tank, a circulation tube, and a circulation pump. The outer tank is held in the cabinet. The inner tank is rotatably mounted in the outer tank so as to accommodate and stir laundry. The circulation tube draws washing water kept in the outer tank and returns it to the outer tank. The circulation pump is located at some midpoint in the circulation tube so as to circulate the washing water. The washing machine further includes, at some midpoint in the circulation tube, a washing water-condition detector for detecting the condition of the washing water. This structure ensures the amount of washing water circulating through the washing water-condition detector, without depending on the operation of the inner tank. Thus, the washing machine can detect the degree of contamination of washing water with high accuracy while maintaining its washing efficiency.

    摘要翻译： 洗衣机包括机壳，外箱，内箱，循环管和循环泵。 外箱保持在柜体内。 内罐可旋转地安装在外罐中，以容纳和搅拌衣物。 循环管抽取保持在外罐中的洗涤水并将其返回到外罐。 循环泵位于循环管的一些中点，以便循环洗涤水。 洗衣机在循环管的一些中点还包括用于检测洗涤水的状况的洗涤水条件检测器。 这种结构确保洗涤水循环通过洗涤水条件检测器的量，而不依赖于内罐的操作。 因此，洗衣机能够在保持其洗涤效率的同时高精度地检测洗涤水的污染程度。

    Resistance change memory device for storing information in a non-volatile manner by changing resistance of memory material
    5.
    发明授权
    Resistance change memory device for storing information in a non-volatile manner by changing resistance of memory material 有权
    电阻变化存储装置，用于通过改变存储材料的电阻来以不挥发的方式存储信息

    公开(公告)号：US07989794B2

    公开(公告)日：2011-08-02

    申请号：US12820996

    申请日：2010-06-22

    申请人： Haruki Toda ,  Koichi Kubo

    发明人： Haruki Toda ,  Koichi Kubo

    IPC分类号： H01L29/02

    CPC分类号： G11C8/14 ,  G11C13/0007 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2213/31 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147

    摘要： A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of which serves as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.

    摘要翻译： 一种电阻变化存储装置，包括基板，形成在基板上方彼此绝缘的第一和第二布线，以及设置在第一和第二布线之间的存储单元，其中存储单元包括：可变电阻元件，用于存储为 信息电阻值; 和与可变电阻元件串联连接的肖特基二极管。 可变电阻元件具有：由包含至少一个过渡元素和用于容纳阳离子离子的空腔部位的复合化合物形成的记录层; 以及形成在记录层的相对侧上的电极，其中一个用作写入或擦除模式的阳离子源，用于将阳离子供应到要容纳在其中的腔室位置的记录层。

    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20100263722A1

    公开(公告)日：2010-10-21

    申请号：US12729331

    申请日：2010-03-23

    申请人： Koichi Kubo ,  Takahiro Mishima

    发明人： Koichi Kubo ,  Takahiro Mishima

    IPC分类号： H01L31/00 ,  H01L31/18

    CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

    摘要： The invention provides a solar cell of increased manufacturing productivity. An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a back surface disposed at the opposite side from the light-receiving surface; a n-type semiconductor region and a p-type semiconductor region both formed on the back surface; and a protection layer formed on the light-receiving surface, the protection layer includes a first surface formed on the semiconductor substrate side and a second surface formed on the opposite side from the first surface, and the second surface has a higher acid-resistance than the first surface.

    摘要翻译： 本发明提供了一种提高制造生产率的太阳能电池。 本发明的一个方面提供了一种太阳能电池，其包括具有光接收表面和设置在与光接收表面相对的一侧的后表面的半导体衬底; 在后表面上形成的n型半导体区域和p型半导体区域; 以及形成在所述受光面上的保护层，所述保护层包括形成在所述半导体衬底侧的第一表面和与所述第一表面相反的一侧上形成的第二表面，并且所述第二表面具有比 第一个表面。

    Microbubble generating device and hair washing device utilizing the same
    7.
    发明授权
    Microbubble generating device and hair washing device utilizing the same 有权
    微泡发生装置和利用其的洗发装置

    公开(公告)号：US07758024B2

    公开(公告)日：2010-07-20

    申请号：US11580851

    申请日：2006-10-16

    申请人： Tsunejiro Takahashi ,  Toshitaka Okumura ,  Koichi Kubo

    发明人： Tsunejiro Takahashi ,  Toshitaka Okumura ,  Koichi Kubo

    IPC分类号： B01F3/04

    CPC分类号： B01F3/0446 ,  A45D19/10 ,  A45D19/14 ,  A45D44/06 ,  B01F3/04985 ,  B01F5/0682 ,  B01F5/0694 ,  B01F2003/04858 ,  Y10S261/75

    摘要： A dissolving water making unit and a bubble generating unit are provided. The dissolving water making unit includes a gas dissolving device for dissolving gas in water. The bubble generating unit includes a bubble generating nozzle and a bubble generating cartridge. The dissolving water making unit sucks water from a water source, and sucks gas to make dissolving water from a mixed solution in which the water and the gas are mixed together. The dissolving water is obtained by dissolving the gas in the water. The bubble generating unit generates microbubbles from the dissolving water supplied from the dissolving water making unit. The gas dissolving device includes a closed vessel; an inflow port which is provided in the closed vessel, and which is provided for causing the mixed liquid sucked from the source to flow into the closed vessel; an exhaust valve which is provided in an upper portion of the closed vessel, and which is provided for exhausting excess gas from the mixed liquid; and an outflow port which is provided near a bottom portion of the closed vessel, and which is provided for causing the dissolving water to flow out from the closed vessel to the bubble generating unit. Between the inflow port and the outflow port, the closed vessel has a retention region in which the dissolving water flows slowly, in which air is dissolved in the dissolving water to substantial saturation, and in which the dissolving water hardly contains fine bubbles.

    摘要翻译： 提供溶解水制造单元和气泡发生单元。 溶解制水单元包括用于将气体溶解在水中的气体溶解装置。 气泡发生单元包括气泡生成喷嘴和气泡产生盒。 溶解水制造单元从水源吸水，吸入气体，使水和气体混合在一起的混合溶液中溶解水。 溶解水通过将气体溶解在水中而获得。 气泡产生单元从溶解水制造单元供应的溶解水产生微泡。 气体溶解装置包括密闭容器; 设置在所述密闭容器中的流入口，其设置成使从所述源吸入的混合液体流入所述密闭容器; 排气阀，其设置在所述密闭容器的上部，并且设置成用于排出来自所述混合液体的过剩气体; 以及设置在所述密闭容器的底部附近的流出口，其设置成使所述溶解水从所述密闭容器流出到所述气泡发生单元。 在流入口和流出口之间，封闭容器具有滞留区域，其中溶解水缓慢流动，其中空气溶解在溶解水中至基本饱和，并且其中溶解水几乎不含有微小气泡。

    Resistance change memory device
    8.
    发明授权
    Resistance change memory device 有权
    电阻变化记忆装置

    公开(公告)号：US07706167B2

    公开(公告)日：2010-04-27

    申请号：US11761808

    申请日：2007-06-12

    申请人： Haruki Toda ,  Koichi Kubo

    发明人： Haruki Toda ,  Koichi Kubo

    IPC分类号： G11C11/00

    CPC分类号： G11C8/08 ,  G11C11/36 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675

    摘要： A resistance change memory device including: a substrate; cell arrays stacked thereabove, each including a matrix layout of memory cells; a write circuit configured to write a pair cell constituted by two neighboring memory cells; and a read circuit configured to read complementary resistance value states of the pair cell as one bit of data, wherein the memory cell includes a variable resistance element for storing as information a resistance value. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.

    摘要翻译： 一种电阻变化存储器件，包括：衬底; 单元阵列堆叠在其上，每个包括存储单元的矩阵布局; 写入电路，被配置为写入由两个相邻存储器单元构成的对单元; 以及读取电路，被配置为读取所述对单元的互补电阻值状态作为数据的一位，其中所述存储单元包括用于存储作为信息电阻值的可变电阻元件。 可变电阻元件具有：由包含至少一个过渡元素和用于容纳阳离子离子的空腔部位的复合化合物形成的记录层; 以及形成在记录层的相对侧上的电极，其中一个电极用作写入或擦除模式中的阳离子源，用于将阳离子供应到要容纳在其中的腔室位置的记录层。

    Resistance change memory device with a variable resistance element formed of a first and a second composite compound
    9.
    发明授权
    Resistance change memory device with a variable resistance element formed of a first and a second composite compound 有权
    具有由第一和第二复合化合物形成的可变电阻元件的电阻变化存储器件

    公开(公告)号：US07692951B2

    公开(公告)日：2010-04-06

    申请号：US12140818

    申请日：2008-06-17

    申请人： Haruki Toda ,  Koichi Kubo

    发明人： Haruki Toda ,  Koichi Kubo

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0007 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/004 ,  G11C2013/0042 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72

    摘要： A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate, each memory cell having a stack structure of a variable resistance element and an access element, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate as underlying the cell array, wherein the variable resistance element comprises a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

    摘要翻译： 一种电阻变化存储器件，包括：半导体衬底; 形成在所述半导体衬底上的至少一个单元阵列，每个存储单元具有可变电阻元件和存取元件的堆叠结构，所述存取元件具有在十倍或更多的一定电压范围内的截止电阻值 与选择状态一样高; 以及形成在半导体基板上的读/写电路，其形成在单元阵列的下方，其中可变电阻元件包括由由AxMyOz表示的第一复合化合物形成的记录层（其中“A”和“M”是每个不同的阳离子元素 另一个“O”氧;和0.5和nlE; x和nlE; 1.5,0.5＆amp; nlE; y＆nlE; 2.5和1.5＆amp; nlE; z＆nlE; 4.5）和含有至少一个过渡元素和用于容纳阳离子离子的空腔部位的第二复合化合物。