-
公开(公告)号：US6127211A
公开(公告)日：2000-10-03
申请号：US162450
申请日：1998-09-29
申请人： Takashi Hirao , Akihisa Yoshida , Toru Fukumoto , Kazuyasu Adachi
发明人： Takashi Hirao , Akihisa Yoshida , Toru Fukumoto , Kazuyasu Adachi
IPC分类号： H01L21/18 , H01L21/336 , H01L21/84 , H01L29/786
CPC分类号： H01L29/78621
摘要： In a method of manufacturing a semiconductor device having an LDD structure, source gases for generating plural types of impurity ions exhibiting different molecular weights and different projected ranges in a target during impurity implantation are supplied to a plasma space, ionized, accelerated with a voltage, and implanted in a semiconductor region on the target substrate. In the case of manufacturing a top-gate transistor, a gate electrode on the semiconductor region has a sufficient thickness to serve as a mask. In the case of manufacturing a bottom-gate transistor, a mask and a resistor are used. An implantation angle is set to an optimum value as desired. Thereafter, the impurity is activated as desired. Thus, the semiconductor device having the LDD structure is manufactured by a single step of impurity implantation.
摘要翻译： 在制造具有LDD结构的半导体器件的方法中，在杂质注入期间在靶中产生表现出不同分子量和不同投影范围的多种杂质离子的源气体被提供给等离子体空间，电离电压加速， 并注入目标衬底上的半导体区域。 在制造顶栅晶体管的情况下，半导体区域上的栅电极具有足够的厚度用作掩模。 在制造底栅晶体管的情况下，使用掩模和电阻器。 根据需要将植入角度设定为最佳值。 此后，根据需要激活杂质。 因此，具有LDD结构的半导体器件通过杂质注入的一个步骤来制造。
-
公开(公告)号：US06207282B1
公开(公告)日：2001-03-27
申请号：US08996762
申请日：1997-12-22
IPC分类号： B32B900
CPC分类号： C30B33/00 , C30B29/04 , H01J2237/0812 , Y10T428/24355 , Y10T428/24479 , Y10T428/30
摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
摘要翻译： 包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。 通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。 具有一定能量的簇粒子被照射到金刚石的表面上。 辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。 因此，金刚石的表面被有效地平滑和蚀刻。
-
公开(公告)号：US5766342A
公开(公告)日：1998-06-16
申请号：US544016
申请日：1995-10-17
IPC分类号： C23C16/24 , C23C16/448 , C30B23/06
CPC分类号： C23C16/4486 , C23C16/24 , Y10T117/1024
摘要： The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.
摘要翻译： 本发明的形成硅膜的方法包括以下步骤：在常压和常温下将含有硅和氯的化合物以液体形式引入反应室中，并将液体形式的化合物喷雾在 微粒状态到支撑在反应室中的基板的表面，并且通过从反应室外部施加的能量分解微细状态的化合物，并在支撑在反应室中的基板上沉积硅膜。
-
公开(公告)号：US5814194A
公开(公告)日：1998-09-29
申请号：US542008
申请日：1995-10-12
CPC分类号： C30B33/00 , C30B29/04 , H01J2237/0812 , Y10T428/24355 , Y10T428/24479 , Y10T428/30
摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
摘要翻译： 包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。 通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。 具有一定能量的簇粒子被照射到金刚石的表面上。 辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。 因此，金刚石的表面被有效地平滑和蚀刻。
-
公开(公告)号：US4859908A
公开(公告)日：1989-08-22
申请号：US100148
申请日：1987-09-23
申请人： Akihisa Yoshida , Kentaro Setsune , Takashi Hirao
发明人： Akihisa Yoshida , Kentaro Setsune , Takashi Hirao
CPC分类号： H01J37/32091 , C30B31/22 , H01J37/32357 , H01J37/3266
摘要： A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.
摘要翻译： 等离子体处理装置通过使用在RF功率和磁场的应用下在低压下产生的高激发等离子体，在半导体元件制造工艺中执行具有大面积的衬底的各种等离子体处理。 在该等离子体处理装置中，将气体引入到真空室中以用作离子源，通过气体将两相电极的两个电极施加RF功率，从而在真空室中产生等离子体， 从布置在预定位置的磁场源向等离子体施加磁场。 所施加的磁场的强度被设定为在所施加的RF功率的频率f处发生电子回旋共振的磁场强度的1.5倍或更多。 特别地，当RF功率的频率f为13.56MHz时，磁场强度被选择在从25高斯到35高斯的范围内。
-
公开(公告)号：US6123774A
公开(公告)日：2000-09-26
申请号：US867487
申请日：1997-06-02
IPC分类号： H01L21/00 , H01L21/205 , H01L21/223 , H01L21/265 , H01L21/28 , H01L21/336 , H01J37/00
CPC分类号： H01L21/2236 , H01L21/67213 , H01L29/66765
摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
摘要翻译： 可以以高生产率制造大面积半导体元件，其在金属和半导体的边界面处具有低电阻并且具有优异的特性和可靠性。 一种制造装置包括：离子照射装置，用于在减压下的气氛中同时向半导体膜或基板中含有含有半导体的掺杂剂的氢离子和离子的离子和离子;以及成膜装置，其形成薄膜或 进行热处理而不将样品暴露于空气的热处理装置。 当通过打开闸阀将具有a-Si：H薄膜的样品送入样品制备室时，将室排出至内部压力为102至10 -3 Pa，然后将样品送至 离子照射室从样品制备室经过其中压力保持在10 -3至10 -7 Pa的范围的中间室，并且照射诸如磷的离子。 在离子照射之后，打开闸阀以将样品转移到中间室，然后打开闸阀以将样品转移到沉积室。 随后，将Ar气体进入沉积室，通过溅射法沉积Al / Ti的金属膜。 沉积后，样品通过中间室送到样品进样室。
-
公开(公告)号：US5976919A
公开(公告)日：1999-11-02
申请号：US905052
申请日：1997-08-01
IPC分类号： H01L21/00 , H01L21/223 , H01L21/336 , H01L21/265 , H01L21/786
CPC分类号： H01L21/67213 , H01L21/2236 , H01L29/66765
摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
-
公开(公告)号：US5141885A
公开(公告)日：1992-08-25
申请号：US709495
申请日：1991-06-03
IPC分类号： H01L29/78 , H01L21/223 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/2236 , H01L29/78669
摘要： A method of fabricating a thin film transistor on an insulating substrate such as quartz or glass without defect in the channel region in semiconductor thin layer, or at the boundary between the semiconductor thin layer and gate insulation layer, but with high mobility and high integration. For that purpose, ions produced by the discharge-decomposition of a hydride gas including dopant are accelerated and implanted into the semiconductor thin layer, wherein the protecting insulation layer for protection of the channel region is of a thickness larger than the projected range of the hydrogen ion.
摘要翻译： 在半导体薄层的沟道区域或半导体薄层与栅极绝缘层之间的边界处，但具有高移动性和高集成度的绝缘基板（例如石英或玻璃等）的绝缘基板上制造薄膜晶体管的方法。 为此，通过包括掺杂剂的氢化物气体的放电分解产生的离子被加速并注入到半导体薄层中，其中用于保护沟道区的保护绝缘层的厚度大于氢的投影范围 离子。
-
9.发明授权Silicon structure, method for producing the same, and solar battery using the silicon structure 失效硅结构体及其制造方法以及使用硅结构的太阳能电池公开(公告)号：US06518494B1
公开(公告)日：2003-02-11
申请号：US08701292
申请日：1996-08-22
IPC分类号： H01L3100
CPC分类号： H01L31/0547 , H01L31/02363 , H01L31/035227 , Y02E10/52
摘要： A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.
摘要翻译： 具有太阳光反射少的硅结构，适用于太阳能电池。 在石英衬底的整个表面上，以约51μm的厚度沉积Mo以形成下电极。 在下电极的整个表面上，通过使用Si 2 Cl 6混合的主要包含硅的膜，形成厚度为30至40μm的包含多个主要由硅构成并具有随机取向的多个柱状硅构件的聚集体的ap型硅结构 与BCl3。 在p型硅结构的表面上，P通过使用POCl 3的热扩散法扩散，在柱状硅构件的周围形成n型区域。 在p型硅结构的整个表面上，形成厚度为30〜40μm的氧化铟锡的透明电极，在透明电极上形成厚度约为1μm的包含Al的上部电极。
-
公开(公告)号：US06984540B2
公开(公告)日：2006-01-10
申请号：US10626822
申请日：2003-07-23
申请人： Mitihiko Takase , Michio Okajima , Akihisa Yoshida , Kentaro Setsune , Kouzou Murakami , Kunihiro Fujii
发明人： Mitihiko Takase , Michio Okajima , Akihisa Yoshida , Kentaro Setsune , Kouzou Murakami , Kunihiro Fujii
IPC分类号： H01I21/00
CPC分类号： H03H3/08 , H01L2224/48227 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H03H9/02645 , H03H9/02921 , H03H9/14541
摘要： A surface acoustic wave device includes a piezoelectric substrate, a first interdigital transducer and a second interdigital transducer formed on the substrate so that the first and second interdigital transducers are opposed to each other. The substrate includes a doping region that is doped with a substance in at least one form selected from the group consisting of atoms, molecules and clusters in a surface between the first and second interdigital transducers.
摘要翻译： 表面声波装置包括形成在基板上的压电基板，第一叉指式换能器和第二叉指换能器，使得第一和第二叉指式换能器彼此相对。 衬底包括掺杂有选自第一和第二叉指换能器之间的表面中的原子，分子和簇的至少一种形式的物质的掺杂区域。
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.021 秒)
