摘要:
A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.
摘要:
The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.
摘要:
An apparatus for producing a thin film of tantalum oxide comprising a vacuum chamber with a heater, an ampule of an organic tantalum compound, a container of a carrier gas, a container of an oxygen-containing gas, and a three way valve having a liquid inlet, a gas inlet and an outlet, the liquid inlet being connected with the ampule via a liquid flow controller, the gas inlet being connected with the containers of gas, the outlet being connected with the vacuum chamber, whereby the tantalum compound vaporized at the three way valve can obtain constant supply by the flow controller regardless of the ambient temperature, resulting in the tantalum oxide film of uniform quality.
摘要:
A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.
摘要:
A low vapor-pressure material feeding apparatus comprises a bubbler (4, 5), accommodating a low vapor-pressure material (6) therein, for bubbling the low vapor-pressure material (6) with an inert gas fed from an inert gas container (3). A bifurcated gas feeding passage (51, 8) is provided between the gas container (3) and a vacuum chamber (50). One branch passage directly introduces an inert gas into the vacuum chamber (50), and the other branch passage introduces an inert gas into the bubbler (4, 5). A gas mixture of a vaporized low vapor-pressure material (6) and the inert gas, is supplied from the bubbler (4, 5) to a vacuum chamber (50). A gas flow meter (7) detects a flow amount of the gas mixture. On a basis of a gas flow amount detected by the gas flow meter (7), an inert gas controller (10) adjusts a feeding amount of inert gas so that a total amount of an inert gas introduced directly into said vacuum chamber (50) and an inert gas introduced into the bubbler (4, 5) is kept at a constant value.
摘要:
An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要:
An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要:
A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
摘要:
A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
摘要:
A method of fabricating a thin film transistor on an insulating substrate such as quartz or glass without defect in the channel region in semiconductor thin layer, or at the boundary between the semiconductor thin layer and gate insulation layer, but with high mobility and high integration. For that purpose, ions produced by the discharge-decomposition of a hydride gas including dopant are accelerated and implanted into the semiconductor thin layer, wherein the protecting insulation layer for protection of the channel region is of a thickness larger than the projected range of the hydrogen ion.