公开(公告)号：US5752217A

公开(公告)日：1998-05-12

申请号：US653268

申请日：1996-05-24

申请人： Takashi Ishizaki ,  Hidetoshi Fujimoto

发明人： Takashi Ishizaki ,  Hidetoshi Fujimoto

IPC分类号： G09B29/00 ,  G01C21/00 ,  G01C21/34 ,  G08G1/0968 ,  G08G1/0969

CPC分类号： G08G1/096861 ,  G01C21/3446 ,  G08G1/096872

摘要： Route costs are computed using the Dijkstra algorithm based on link information and connection information and a destination route is set based on a connection of links which has the least route cost. The route cost is set to sub-nodes of each connection link. Therefore, optimal routes can be set even though traffic regulations such as no right turns or the like exist on certain nodes.

摘要翻译： 使用基于链路信息和连接信息的Dijkstra算法来计算路由成本，并且基于具有最小路由成本的链路的连接来设置目的地路由。 路由成本设置为每个连接链路的子节点。 因此，即使在某些节点上存在诸如没有右转等的交通规则，也可以设定最优路线。

公开(公告)号：US08759878B2

公开(公告)日：2014-06-24

申请号：US13238684

申请日：2011-09-21

申请人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

发明人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

IPC分类号： H01L29/66

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7787

摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.

摘要翻译： 根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。 第一，第二和第四半导体层包括氮化物半导体。 第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。 第三半导体层设置在第二半导体层上。 第三半导体层是GaN。 第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。 第一电极设置在第三半导体层的一部分上。 第四半导体层不设置在该部分上。

公开(公告)号：US08560573B2

公开(公告)日：2013-10-15

申请号：US13557567

申请日：2012-07-25

申请人： Takayuki Watanabe ,  Hidetoshi Fujimoto ,  Takamitsu Suzuki ,  Takayuki Suzuki ,  Kaoru Shibata ,  Akio Samizu

发明人： Takayuki Watanabe ,  Hidetoshi Fujimoto ,  Takamitsu Suzuki ,  Takayuki Suzuki ,  Kaoru Shibata ,  Akio Samizu

IPC分类号： G06F17/30

CPC分类号： G01C21/32 ,  G09B29/106

摘要： A map difference data generation apparatus includes: most recent and supplementary map data storage devices storing primary most recent and supplementary map data, respectively; a map update reflection device generating secondly most recent and supplementary map data according to an update of a first link, and generating tertiary most recent and supplementary map data according to an update of a second link; a determination device determining a dependency relationship between the update of the first and second links, in accordance with results of searching a route in the tertiary most recent and supplementary map data between first and second nodes, which are both ends of the second link; and a map difference data generation device generating map difference data, which defines a combination of the update of the first and second links, when the update of the first and second links have the dependency relationship.

摘要翻译： 地图差分数据生成装置包括：分别存储主要最新和附加地图数据的最新和补充地图数据存储装置; 地图更新反射装置，根据第一链路的更新生成第二最新和补充地图数据，并根据第二链路的更新生成第三最新和补充地图数据; 确定装置，根据在第三最新的路由搜索的结果和作为第二链路的两端的第一和第二节点之间的补充地图数据的结果来确定第一和第二链路的更新之间的依赖关系; 以及当所述第一和第二链路的更新具有依赖关系时，生成映射差异数据的地图差分数据生成装置，所述地图差分数据定义所述第一和第二链接的更新的组合。

公开(公告)号：US08519439B2

公开(公告)日：2013-08-27

申请号：US13239229

申请日：2011-09-21

申请人： Wataru Saito ,  Hidetoshi Fujimoto

发明人： Wataru Saito ,  Hidetoshi Fujimoto

IPC分类号： H01L29/66

CPC分类号： H01L29/42316 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7781

摘要： According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains AlXGa1-XN. A top layer of the first semiconductor layer is terminated by nitrogen. The semiconductor element includes a second semiconductor layer containing non-doped or first conductivity-type AlYGa1-YN formed on the first semiconductor layer. The semiconductor element includes a third semiconductor layer containing AlZGa1-ZN formed on the second semiconductor layer. The semiconductor element includes a first major electrode connected to the third semiconductor layer. The semiconductor element includes a second major electrode connected to the third semiconductor layer. The semiconductor element includes a gate electrode provided on the third semiconductor layer between the first major electrode and the second major electrode.

摘要翻译： 根据一个实施例，半导体元件包括第一半导体层。 第一半导体层包含AlXGa1-XN。 第一半导体层的顶层由氮端接。 半导体元件包括形成在第一半导体层上的含有非掺杂或第一导电型AlYGa1-YN的第二半导体层。 半导体元件包括形成在第二半导体层上的含有AlZGa1-ZN的第三半导体层。 半导体元件包括连接到第三半导体层的第一主电极。 半导体元件包括连接到第三半导体层的第二主电极。 半导体元件包括设置在第一主电极和第二主电极之间的第三半导体层上的栅电极。

公开(公告)号：US20130062671A1

公开(公告)日：2013-03-14

申请号：US13420559

申请日：2012-03-14

申请人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

发明人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

IPC分类号： H01L29/78

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。

公开(公告)号：US08390030B2

公开(公告)日：2013-03-05

申请号：US12104818

申请日：2008-04-17

申请人： Wataru Saito ,  Hidetoshi Fujimoto ,  Takao Noda ,  Yasunobu Saito ,  Tomohiro Nitta

发明人： Wataru Saito ,  Hidetoshi Fujimoto ,  Takao Noda ,  Yasunobu Saito ,  Tomohiro Nitta

IPC分类号： H01L29/778

CPC分类号： H01L29/78 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/8618 ,  H01L29/872

摘要： A semiconductor device includes: a first semiconductor layer made of an AlxGa1−xN (0≦×

摘要翻译： 半导体器件包括：由Al x Ga 1-x N（0＆lt; n 1; x 1）制成的第一半导体层; 由第一半导体层提供并由未掺杂或第一导电类型的Al y Ga 1-y N（0

公开(公告)号：US07728354B2

公开(公告)日：2010-06-01

申请号：US11939976

申请日：2007-11-14

申请人： Wataru Saito ,  Akira Yoshioka ,  Hidetoshi Fujimoto ,  Takao Noda ,  Yasunobu Saito ,  Tomohiro Nitta ,  Yorito Kakiuchi

发明人： Wataru Saito ,  Akira Yoshioka ,  Hidetoshi Fujimoto ,  Takao Noda ,  Yasunobu Saito ,  Tomohiro Nitta ,  Yorito Kakiuchi

IPC分类号： H01L21/338

CPC分类号： H01L29/045 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0≦x≦1); a second semiconductor layer of n-type AlyGa1-yN (0

摘要翻译： 半导体器件包括：p型Al x Ga 1-x N（0＆amp; n 1; x＆n 1; 1）的第一半导体层; 在第一半导体层上形成的n型Al y Ga 1-y N（0

公开(公告)号：US20070208505A1

公开(公告)日：2007-09-06

申请号：US11712543

申请日：2007-03-01

申请人： Hidetoshi Fujimoto

发明人： Hidetoshi Fujimoto

IPC分类号： G01C21/32

CPC分类号： G09B29/106 ,  G01C21/32

摘要： An information center has an all-road updating data and a main-road updating data. The all-road updating data is a difference of all roads extracted from an all-road map data, and the main-road updating map data is a difference of specified roads extracted from the all-road map data. A map display system executes a reverse-updating to return the map data to a previous state not updated with the main-road updated map data, when its map data has already been updated with the main-road updated map data. The map display system then executes updating of the map data with the all-road updated map data.

摘要翻译： 信息中心具有全路更新数据和主路更新数据。 全路更新数据是从全路地图数据提取的所有道路的差异，主道路更新地图数据是从全路地图数据提取的特定道路的差。 当地图数据已经用主路更新的地图数据更新时，地图显示系统执行反向更新以将地图数据返回到未被主路更新的地图数据更新的先前状态。 然后，地图显示系统使用全路更新的地图数据执行地图数据的更新。

公开(公告)号：US06835963B2

公开(公告)日：2004-12-28

申请号：US10465649

申请日：2003-06-20

申请人： Genichi Hatakoshi ,  Hidetoshi Fujimoto ,  Mamoru Terauchi

发明人： Genichi Hatakoshi ,  Hidetoshi Fujimoto ,  Mamoru Terauchi

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/145 ,  H01L33/385 ,  H01L33/46

摘要： This invention provides a light-emitting element that comprises a light-emitting portion made of a nitride semiconductor; and a first wavefront converter for converting the radiated shape of light that is emitted from the light-emitting portion into a radiated shape that is smaller than the wavelength thereof, and emitting the same as output light. In this case, the first wavefront converter has a small aperture of a diameter that is smaller than the wavelength of light that is emitted from the light-emitting portion. If the output light is made to comprise an evanescent wave that is emitted to the exterior through this small aperture, it is possible to obtain an extremely small light spot. This invention also relates to a surface-emitting type of light-emitting element comprising a multi-layered structure comprising a light-emitting layer; and a pair of electrodes for supplying a current to the light-emitting layer; wherein output light is emitted from a light-emitting surface on top of the multi-layered structure; and the pair of electrodes are recessed from the light-emitting surface to the light-emitting layer side. This makes it possible to bring the light-emitting surface extremely close to an object to be illuminated. The small aperture can be opened up in a self-aligning manner by using the light from the light-emitting portion. As a result, it is possible to provide a light-emitting element and a method of fabrication thereof that create beam characteristics that are suitable for use with an optical disc or the like.

摘要翻译： 本发明提供一种发光元件，其包括由氮化物半导体构成的发光部分; 以及第一波前转换器，用于将从发光部分发射的光的辐射形状转换成小于其波长的辐射形状，并将其发射为输出光。 在这种情况下，第一波前转换器具有比从发光部发射的光的波长小的直径的小孔径。 如果使输出光包括通过该小孔向外部发射的ev逝波，则可以获得极小的光点。 本发明还涉及包括发光层的多层结构的表面发射型发光元件; 以及一对用于向发光层供给电流的电极; 其中输出光从所述多层结构的顶部上的发光表面发射; 并且一对电极从发光面凹入发光层侧。 由此，能够使发光面与被照射体接近。 通过使用来自发光部的光，能够以自对准的方式打开小光圈。 结果，可以提供一种产生适合于与光盘等一起使用的光束特性的发光元件及其制造方法。

公开(公告)号：US6119066A

公开(公告)日：2000-09-12

申请号：US917847

申请日：1997-08-27

申请人： Wataru Sugiura ,  Osamu Kanematsu ,  Hidetoshi Fujimoto

发明人： Wataru Sugiura ,  Osamu Kanematsu ,  Hidetoshi Fujimoto

IPC分类号： G09B29/00 ,  G01C21/00 ,  G01C21/36 ,  G08G1/0969 ,  G06F165/00

CPC分类号： G01C21/3632 ,  G08G1/0969

摘要： When a vehicle is within a predetermined distance from an intersection during the execution of navigation operations, a navigation system displays an enlarged guide map of the same intersection. The guide map shows direction labels that are set for roads that are connected to a road to be approached by the vehicle. The direction labels are set for the connecting roads by tracking the connecting roads and by determining appropriate direction labels following a predetermined procedure. For example, names of tollgates, names of stations, names of special facilities, names of administrative units, names of highways or the like may be set as direction labels.

摘要翻译： 在导航操作执行期间，当车辆距交叉路口的预定距离内时，导航系统显示相同交叉口的放大引导图。 指南图显示了为连接到车辆接近的道路的道路设置的方向标签。 通过跟踪连接道路并按照预定程序确定适当的方向标签，为连接道路设置方向标签。 例如，可以将收件人姓名，车站名称，特殊设施名称，行政单位名称，公路名称等设置为方向标签。