摘要:
An image sensor comprises, a substrate, a plurality of photoelectric converters mounted on the substrate, for each of which a photoelectric conversion layer is formed of an organic compound layer and is sandwiched between an anode and a cathode so as to perform photoelectric conversion based on incident light, drive circuits for detecting output provided by a signal current generated by the photoelectric converters and for reading signal charges, and a wiring for electrically connecting the photoelectric converters and the drive circuits, wherein, for the plurality of the photoelectric converters that form one read pixels, the size of a photoelectric conversion area differs in accordance with a sensitivity of each of the plurality of photoelectric converters.
摘要:
The organic photoelectric conversion element in accordance with the invention comprises at least one pair of electrodes 12 and 16, a photoelectric conversion region (layer) 15 arranged between the electrodes and containing at least an electron donating organic material and an electron accepting organic material, and a buffer layer 14 containing at least one inorganic matter and inserted between the photoelectric conversion region and at least one electrode of the above-cited pair of electrodes.
摘要:
An image sensor 1 includes a glass substrate 10, a plurality of photoelectric converting elements 20 made of an organic material, a plurality of IC chips 30 on which driving circuits made of single crystal silicon are respectively mounted, and wirings 40 which connect the plurality of photoelectric converting elements 20 to the respective driving circuits mounted on the IC chips 30. The plurality of photoelectric converting elements 20 are integrally and seamlessly formed with a predetermined arrangement pitch over a predetermined sensor length. The arrangement pitch of a plurality of detecting means formed on the driving circuits mounted on the IC chips 30 is equal to or less than that of the photoelectric converting elements.
摘要:
Method for manufacturing organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process.
摘要:
A light emitter and a method of manufacturing a light emitter. The light emitter includes a first electrode, a charge injection transport layer, a light-emitting layer, and a second electrode that are layered in this order. At least the light-emitting layer is defined by a bank that has at least one liquid-repellent surface. The charge injection transport layer is principally composed of a metal compound that is more liquid-philic than the surface of the bank. The charge injection transport layer includes a recessed structure so that in a region defined by the bank, the charge injection transport layer is lower than a bottom surface of the bank.
摘要:
An organic information reading sensor comprising a plurality of light receiving sections for interposing at least one kind of organic material between electrodes and converting a light signal into an electric signal, wherein a non-translucent insulator is provided between the light receiving sections.
摘要:
An organic thin-film electroluminescent display device comprising a substrate, hole injection electrodes, an organic thin film layer, electron injection electrodes, an electrode-driving IC for driving the electron injection electrodes and the electron injection electrodes and lead wires for connecting the hole injection electrodes and the electron injection electrodes to the electrode-driving IC. The lead wires each include a lead underlayer made of the same material of the hole injection electrode and a lead electroconductive layer formed on the lead underlayer and having a higher electroconductivity than that of the lead underlayer and or the electron injection electrodes each may include an underlayer for the electron injection electrode and an electroconductive layer for the electron injection electrode formed on the underlayer for the electron injection electrode and having a higher electroconductivity than that of the underlayer for the electron. The device injection electrode can prevent fluctuations in luminescence brightness due to different ohmic losses of lead wires connecting the hole injection electrodes and the electron injection electrodes to the electrode-driving IC and due to different electric resistances of electron injection electrodes.
摘要:
A semiconductor memory device comprises eight memory arrays arranged in one column. A peripheral circuit is arranged in the central portion of the eight memory arrays, two column decoders being arranged with the peripheral circuit interposed therebetween. Each of the eight memory arrays is provided with a row decoder. A plurality of first column selecting lines are provided so as to cross the three memory arrays arranged on one side of the peripheral circuit from the column decoder. In addition, a plurality of second column selecting lines are provided so as to intersect with the three memory arrays arranged on the other side of the peripheral circuit from the column decoder.
摘要:
An input signal is inverted by a CMOS inverter and provided for an output signal line. The CMOS inverter is provided between a power supply and a ground, and its node on the side of the power supply is charged all the time to prevent the potential thereof from being lowered. An output signal provided for the output signal line is delayed by a delay circuit to be applied to a boosting capacitor. The potential of the node is further boosted by this boosting capacitor. Consequently, the potential of the output signal is also boosted. When the potential of the node is raised higher than a supply voltage, an N channel MOSFET for charging is turned off to prevent a reverse flow of a charge.
摘要:
An organic EL panel comprises anodes, a cathode, organic light-emitting layers, and first functional layers each including a hole injection layer and a hole transport layer. The hole injection layer of each of the R, G, and B colors is made of only a metal oxide including tungsten oxide, and has a thickness of 5 nm to 40 nm. At least one of the hole injection layers has a thickness different from the other hole injection layers. The hole transport layers of the R, G, and B colors are equivalent in thickness. The organic light-emitting layers of the R, G, and B colors are equivalent in thickness.