公开(公告)号：US07968463B2

公开(公告)日：2011-06-28

申请号：US12227714

申请日：2007-05-21

申请人： Takashi Nakagawa ,  Toru Tatsumi ,  Makiko Oshida ,  Nobuyuki Ikarashi ,  Kensuke Takahashi ,  Kenzo Manabe

发明人： Takashi Nakagawa ,  Toru Tatsumi ,  Makiko Oshida ,  Nobuyuki Ikarashi ,  Kensuke Takahashi ,  Kenzo Manabe

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L21/28097 ,  H01L29/665

摘要： A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.

摘要翻译： 金属化合物层的形成方法包括在室内制备具有硅，锗或硅锗的半导体材料露出的表面的基板，形成金属化合物层，包括：供给原料气体 含有用于与所述室形成具有所述半导体材料的金属化合物的金属; 将基板加热到原料气体被热解的温度; 以及通过金属与半导体材料的反应形成金属化合物层，使得金属层不沉积在基板上。 半导体器件的制造方法采用这种金属化合物层的形成方法。

公开(公告)号：US20100084713A1

公开(公告)日：2010-04-08

申请号：US12311428

申请日：2007-09-27

申请人： Takashi Nakagawa ,  Toru Tatsumi ,  Kenzo Manabe ,  Kensuke Takahashi ,  Makiko Oshida

发明人： Takashi Nakagawa ,  Toru Tatsumi ,  Kenzo Manabe ,  Kensuke Takahashi ,  Makiko Oshida

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823835 ,  H01L21/28079 ,  H01L21/823842 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/7833

摘要： A second mask is provided so as to cover a second gate pattern and a first gate pattern is heated to a temperature at which a material gas containing a first metal thermally decomposes, polysilicon constituting the first gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the first gate pattern is turned into a first gate electrode constituted by a silicide of the first metal. After the second mask is removed, a first mask is provided so as to cover the first electrode and the second gate pattern is heated to a temperature at which the material gas thermally decomposes, polysilicon constituting the second gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the second gate pattern is turned into a second gate electrode constituted by the silicide of the first metal. Then, the first mask is removed. With such a manufacturing method, a silicide layer is formed without adding an annealing process.

摘要翻译： 提供第二掩模以覆盖第二栅极图案，并且将第一栅极图案加热到含有第一金属的材料气体热分解的温度，构成第一栅极图案的多晶硅与第一金属进行硅化反应 第一金属层不沉积的条件，因此第一栅极图案变成由第一金属的硅化物构成的第一栅电极。 在去除第二掩模之后，提供第一掩模以覆盖第一电极，并且将第二栅极图案加热到材料气体热分解的温度，构成第二栅极图案的多晶硅与第一金属反应， 在第一金属层不沉积的条件下进行硅化，因此第二栅极图案变成由第一金属的硅化物构成的第二栅电极。 然后，删除第一个掩模。 通过这样的制造方法，不添加退火处理而形成硅化物层。

公开(公告)号：US20090170252A1

公开(公告)日：2009-07-02

申请号：US12227714

申请日：2007-05-21

申请人： Takashi Nakagawa ,  Toru Tatsumi ,  Makiko Oshida ,  Nobuyuki Ikarashi ,  Kensuke Takahashi ,  Kenzo Manabe

发明人： Takashi Nakagawa ,  Toru Tatsumi ,  Makiko Oshida ,  Nobuyuki Ikarashi ,  Kensuke Takahashi ,  Kenzo Manabe

IPC分类号： H01L21/8234 ,  B05C11/00 ,  H01L21/285

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L21/28097 ,  H01L29/665

摘要： A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.

摘要翻译： 金属化合物层的形成方法包括在室内制备具有硅，锗或硅锗的半导体材料露出的表面的基板，形成金属化合物层，包括：供给原料气体 含有用于与所述室形成具有所述半导体材料的金属化合物的金属; 将基板加热到原料气体被热解的温度; 以及通过金属与半导体材料的反应形成金属化合物层，使得金属层不沉积在基板上。 半导体器件的制造方法采用这种金属化合物层的形成方法。

公开(公告)号：US20070138580A1

公开(公告)日：2007-06-21

申请号：US10575785

申请日：2005-06-21

申请人： Kensuke Takahashi ,  Kenzo Manabe ,  Nobuyuki Ikarashi ,  Toru Tatsumi

发明人： Kensuke Takahashi ,  Kenzo Manabe ,  Nobuyuki Ikarashi ,  Toru Tatsumi

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L29/4975 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/66545

摘要： There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi1-X (0 0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X≦0.5) in a n-type MOSFET.

摘要翻译： 提供一种半导体器件，其能够解决CMOS晶体管中的阈值控制的问题，伴随着具有高介电常数的栅极绝缘膜和金属栅极电极的组合，并且显着提高性能而不劣化器件的可靠性 。 半导体器件包括由具有高介电常数的材料构成的栅极绝缘膜和栅电极。 与栅极绝缘膜接触的栅电极的一部分具有以MxSi 1-X（0 0.5），并且在n型MOSFET中等于或小于0.5（X <= 0.5）。

公开(公告)号：US07592674B2

公开(公告)日：2009-09-22

申请号：US10575785

申请日：2005-06-21

申请人： Kensuke Takahashi ,  Kenzo Manabe ,  Nobuyuki Ikarashi ,  Toru Tatsumi

发明人： Kensuke Takahashi ,  Kenzo Manabe ,  Nobuyuki Ikarashi ,  Toru Tatsumi

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L21/8238

CPC分类号： H01L29/4975 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/66545

摘要： There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi1-X (0 0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X≦0.5) in a n-type MOSFET.

摘要翻译： 提供一种半导体器件，其能够解决CMOS晶体管中的阈值控制的问题，伴随着具有高介电常数的栅极绝缘膜和金属栅极电极的组合，并且显着提高性能而不劣化器件的可靠性 。 半导体器件包括由具有高介电常数的材料构成的栅极绝缘膜和栅电极。 与栅极绝缘膜接触的栅电极的一部分具有由MxSi1-X（0 0.5），并且在n型MOSFET中等于或小于0.5（X <= 0.5）。

公开(公告)号：US20100176363A1

公开(公告)日：2010-07-15

申请号：US12602933

申请日：2008-04-16

申请人： Kensuke Takahashi ,  Takashi Nakagawa

发明人： Kensuke Takahashi ,  Takashi Nakagawa

IPC分类号： H01L45/00

CPC分类号： H01L45/146 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1666

摘要： A variable resistance element includes: a first electrode; a variable resistance material layer formed on the first electrode; and a second electrode formed on this variable resistance material layer. The variable resistance material layer is made of an uncrystallized material including a transition metal oxide, which is an oxide of a transition metal M1, the transition metal oxide containing an oxide of a nontransition metal element M2.

摘要翻译： 可变电阻元件包括：第一电极; 形成在所述第一电极上的可变电阻材料层; 以及形成在该可变电阻材料层上的第二电极。 可变电阻材料层由包含过渡金属氧化物的未结晶材料制成，过渡金属氧化物是过渡金属M1的氧化物，过渡金属氧化物含有非过渡金属元素M2的氧化物。

公开(公告)号：US20090045469A1

公开(公告)日：2009-02-19

申请号：US12084619

申请日：2006-10-18

申请人： Kensuke Takahashi

发明人： Kensuke Takahashi

IPC分类号： H01L27/092 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/823835 ,  H01L21/28097 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A semiconductor device including a silicon substrate; a gate insulating film on the silicon substrate; a gate electrode on the gate insulating film; and source/drain regions formed in the substrate on both sides of the gate electrode, wherein the gate electrode includes a first silicide layered region formed of a silicide of a metal M1; and a second silicide layered region on the first silicide layered region, the second silicide layered region being formed of a silicide of the same metal as the metal M1 and being lower in resistivity than the first silicide layered region.

摘要翻译： 一种包括硅衬底的半导体器件; 硅基板上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 以及形成在栅电极两侧的基板中的源/漏区，其中栅电极包括由金属M1的硅化物形成的第一硅化物层; 以及在所述第一硅化物层状区域上的第二硅化物层叠区域，所述第二硅化物层叠区域由与所述金属M1相同的金属的硅化物形成，并且电阻率低于所述第一硅化物层叠区域。

公开(公告)号：US20050047711A1

公开(公告)日：2005-03-03

申请号：US10911626

申请日：2004-08-05

申请人： Satoshi Ide ,  Kazuyuki Mori ,  Kensuke Takahashi ,  Toru Matsuyama

发明人： Satoshi Ide ,  Kazuyuki Mori ,  Kensuke Takahashi ,  Toru Matsuyama

IPC分类号： G02B26/08 ,  G02B6/35 ,  H04Q11/00 ,  G02B6/26

CPC分类号： G02B6/3588 ,  G02B6/3518 ,  G02B6/3556 ,  G02B6/357 ,  G02B6/3584 ,  H04Q11/0005 ,  H04Q2011/003 ,  H04Q2011/0039

摘要： In an optical switch controller, in order that residual vibration at movement control of a movable body such as a tilt mirror can be reduced and controlled with high accuracy, a processing unit outputs a driving signal for controlling the angle of the tilt mirror, the driving signal is D/A converted by a D/A converter and then is changed to a high-voltage signal by a high-voltage amplifier to be supplied to the tilt mirror, the electrostatic capacity of the tilt mirror changes corresponding to angle change of the tilt mirror, a mirror-angle detecting unit detects the electrostatic capacity and feeds back it as a correction value to a processing unit, and the processing unit corrects the driving signal using a correction value obtained when the angle of the tilt mirror is actually changed.

摘要翻译： 在光开关控制器中，为了能够以高精度减少和控制诸如倾斜镜的可移动体的移动控制的残余振动，处理单元输出用于控制倾斜镜的角度的驱动信号，驱动 信号由D / A转换器进行D / A转换，然后被高压放大器改变为高电压信号以提供给倾斜镜，倾斜镜的静电电容相应于 镜面检测单元检测静电电容并将其作为校正值反馈到处理单元，并且处理单元使用在实际改变倾斜镜的角度时获得的校正值来校正驱动信号。

公开(公告)号：US20110006278A1

公开(公告)日：2011-01-13

申请号：US12864565

申请日：2009-01-26

申请人： Kensuke Takahashi

发明人： Kensuke Takahashi

IPC分类号： H01L45/00 ,  H01L21/16

CPC分类号： H01L27/101 ,  C23C16/406 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

摘要： A variable resistance non-volatile memory device of the laminated structure of an upper electrode a variable resistance material a lower electrode includes an insulating film formed for being contacted with the variable resistance material and a reset electrode formed for being contacted with the insulating film without being contacted with the upper electrode or the lower electrode. The device is reset by applying a voltage to the reset electrode. A low resistance value for the set state and a high resistance value for the reset state may be obtained as the current during the reset operation of the device is reduced. A low reset current and a high resistance ratio between the resistance value for the set state and that for the reset state are simultaneously achieved.

摘要翻译： 上电极，可变电阻材料，下电极的层叠结构的可变电阻非易失性存储器件包括形成为与可变电阻材料接触的绝缘膜和形成为与绝缘膜接触的复位电极，而不是 与上电极或下电极接触。 通过向复位电极施加电压来复位器件。 当器件的复位操作期间的电流减小时，可以获得设定状态的低电阻值和复位状态的高电阻值。 同时实现设定状态的电阻值与复位状态的电阻值之间的低复位电流和高电阻比。

公开(公告)号：US4436023A

公开(公告)日：1984-03-13

申请号：US361983

申请日：1982-03-25

申请人： Kensuke Takahashi

发明人： Kensuke Takahashi

IPC分类号： A47J36/38 ,  A47J37/06

CPC分类号： A47J36/38 ,  A47J37/06 ,  Y10S55/36

摘要： An apparatus for cooking food and extracting smoke is disclosed comprising a grill for use with a heat source, the grill having an upwardly convex cooking surface with ventilation holes formed therein and a peripheral groove for collecting food juices, and further comprising a hood for collecting smoke supported above a grill on a cooking table and duct work leading from within the hood, through the table and away to external exhaust. The apparatus is suited for restaurant dining room use.

摘要翻译： 公开了一种用于烹饪食物和提取烟雾的设备，其包括用于与热源一起使用的格栅，所述格栅具有向上凸起的烹饪表面，其中形成有通风孔，以及用于收集食用果汁的周边槽，还包括用于收集烟雾的罩 支撑在烹饪台上的格栅上方，并且从发动机罩内引导的管道工作，通过工作台和外部排气。 该设备适用于餐厅用餐室。