公开(公告)号：US20120181632A1

公开(公告)日：2012-07-19

申请号：US13353089

申请日：2012-01-18

申请人： Heiji WATANABE ,  Kazuhiko Endo ,  Kenzo Manabe

发明人： Heiji WATANABE ,  Kazuhiko Endo ,  Kenzo Manabe

IPC分类号： H01L29/772

CPC分类号： H01L21/28202 ,  H01L21/28167 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A method of manufacturing a semiconductor device including introducing nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided.

摘要翻译： 一种在硅衬底上依次具有栅极绝缘膜和栅电极的半导体器件; 其中所述栅极绝缘膜包括含氮的高介电常数绝缘膜，其具有将氮引入金属氧化物或金属硅酸盐中的结构; 含氮高介电常数绝缘膜中的氮浓度在膜厚方向上具有分布; 在与硅衬底相距一定距离的区域存在氮含量高介电常数绝缘膜中的氮浓度在膜厚方向上达到最大的位置。 还提供一种制造半导体器件的方法，该半导体器件包括通过用含氮等离子体照射由金属氧化物或金属硅酸盐制成的高介电常数绝缘膜来引入氮。

公开(公告)号：US07968463B2

公开(公告)日：2011-06-28

申请号：US12227714

申请日：2007-05-21

申请人： Takashi Nakagawa ,  Toru Tatsumi ,  Makiko Oshida ,  Nobuyuki Ikarashi ,  Kensuke Takahashi ,  Kenzo Manabe

发明人： Takashi Nakagawa ,  Toru Tatsumi ,  Makiko Oshida ,  Nobuyuki Ikarashi ,  Kensuke Takahashi ,  Kenzo Manabe

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L21/28097 ,  H01L29/665

摘要： A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.

摘要翻译： 金属化合物层的形成方法包括在室内制备具有硅，锗或硅锗的半导体材料露出的表面的基板，形成金属化合物层，包括：供给原料气体 含有用于与所述室形成具有所述半导体材料的金属化合物的金属; 将基板加热到原料气体被热解的温度; 以及通过金属与半导体材料的反应形成金属化合物层，使得金属层不沉积在基板上。 半导体器件的制造方法采用这种金属化合物层的形成方法。

公开(公告)号：US20100084713A1

公开(公告)日：2010-04-08

申请号：US12311428

申请日：2007-09-27

申请人： Takashi Nakagawa ,  Toru Tatsumi ,  Kenzo Manabe ,  Kensuke Takahashi ,  Makiko Oshida

发明人： Takashi Nakagawa ,  Toru Tatsumi ,  Kenzo Manabe ,  Kensuke Takahashi ,  Makiko Oshida

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823835 ,  H01L21/28079 ,  H01L21/823842 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/7833

摘要： A second mask is provided so as to cover a second gate pattern and a first gate pattern is heated to a temperature at which a material gas containing a first metal thermally decomposes, polysilicon constituting the first gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the first gate pattern is turned into a first gate electrode constituted by a silicide of the first metal. After the second mask is removed, a first mask is provided so as to cover the first electrode and the second gate pattern is heated to a temperature at which the material gas thermally decomposes, polysilicon constituting the second gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the second gate pattern is turned into a second gate electrode constituted by the silicide of the first metal. Then, the first mask is removed. With such a manufacturing method, a silicide layer is formed without adding an annealing process.

摘要翻译： 提供第二掩模以覆盖第二栅极图案，并且将第一栅极图案加热到含有第一金属的材料气体热分解的温度，构成第一栅极图案的多晶硅与第一金属进行硅化反应 第一金属层不沉积的条件，因此第一栅极图案变成由第一金属的硅化物构成的第一栅电极。 在去除第二掩模之后，提供第一掩模以覆盖第一电极，并且将第二栅极图案加热到材料气体热分解的温度，构成第二栅极图案的多晶硅与第一金属反应， 在第一金属层不沉积的条件下进行硅化，因此第二栅极图案变成由第一金属的硅化物构成的第二栅电极。 然后，删除第一个掩模。 通过这样的制造方法，不添加退火处理而形成硅化物层。

公开(公告)号：US20050017319A1

公开(公告)日：2005-01-27

申请号：US10489522

申请日：2003-03-27

申请人： Kenzo Manabe ,  Kazuhiko Endo

发明人： Kenzo Manabe ,  Kazuhiko Endo

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/336 ,  H01L29/51 ,  H01L21/469

CPC分类号： H01L21/02244 ,  H01L21/02178 ,  H01L21/02247 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545

摘要： A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 μm-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.

摘要翻译： 半导体器件具有MIS（金属绝缘膜 - 半导体）结构，并且在半导体上使用主要含有Al，O和N原子的膜。 或者，半导体器件具有MIS结构，并且在源极和漏极之间的沟道区域上设置主要包含Al，O和N原子的膜作为栅极绝缘膜。 满足0.05毫米栅长半导体晶体管的栅极绝缘膜所需的特性。 特别地，膜中不包含固定电荷，并且杂质扩散减少。

公开(公告)号：US20130280872A1

公开(公告)日：2013-10-24

申请号：US13914956

申请日：2013-06-11

申请人： Kenzo MANABE

发明人： Kenzo MANABE

IPC分类号： H01L21/8238

CPC分类号： H01L21/823835 ,  H01L21/28185 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/7833

摘要： A semiconductor device has a substrate; and an N-channel MIS transistor and a P-channel MIS transistor provided on the same substrate; each of the N-channel MIS transistor and the P-channel MIS transistor having a Hf-containing, high-k gate insulating film, and a gate electrode provided over the high-k gate insulating film, the N-channel MIS transistor having a silicon oxide film or a silicon oxynitride film, which contains a first work function adjusting element, provided between the substrate and the high-k gate insulating film, and, the P-channel MIS transistor having a silicon oxide film or a silicon oxynitride film, which contains the first work function adjusting element same as that contained in the N-channel MIS transistor, provided between the high-k gate insulating film and the gate electrode.

摘要翻译： 半导体器件具有基板; 以及设置在同一衬底上的N沟道MIS晶体管和P沟道MIS晶体管; N沟道MIS晶体管和P沟道MIS晶体管中的每一个具有包含Hf的高k栅极绝缘膜和设置在高k栅极绝缘膜上的栅电极，N沟道MIS晶体管具有 含有设置在基板和高k栅极绝缘膜之间的第一功函数调节元件的氧化硅膜或氧氮化硅膜，以及具有氧化硅膜或氮氧化硅膜的P沟道MIS晶体管， 其包括设置在高k栅极绝缘膜和栅电极之间的与N沟道MIS晶体管相同的第一功函数调节元件。

公开(公告)号：US07786537B2

公开(公告)日：2010-08-31

申请号：US12093192

申请日：2006-10-24

申请人： Kenzo Manabe

发明人： Kenzo Manabe

IPC分类号： H01L31/062 ,  H01L21/8238

CPC分类号： H01L21/823835 ,  H01L21/28052 ,  H01L21/823842 ,  H01L29/4933 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device includes a silicon substrate; a P channel type field effect transistor including a first gate insulating film on the substrate, a first gate electrode on the first gate insulating film and a first source/drain region; and an N channel type field effect transistor including a second gate insulating film on the substrate, a second gate electrode on the second gate insulating film and a second source/drain region. The entire first gate electrode is made of a metal silicide, and at least in an upper portion including the upper surface of the second gate electrode, a silicide region of the same kind as the metal (M) is provided. The metal concentration in the silicide region is lower than that in the silicide of the first gate electrode. In an upper portion including the upper surface of the second gate electrode, there is a barrier layer region containing a metal diffusion suppressing element at a concentration higher than that in the lower portion.

摘要翻译： 半导体器件包括硅衬底; P沟道型场效应晶体管，其包括在所述基板上的第一栅极绝缘膜，所述第一栅极绝缘膜上的第一栅极电极和第一源极/漏极区域; 以及N沟道型场效应晶体管，其在基板上具有第二栅极绝缘膜，在第二栅极绝缘膜上具有第二栅极电极和第二源极/漏极区域。 整个第一栅电极由金属硅化物制成，并且至少在包括第二栅电极的上表面的上部中，提供与金属（M）相同类型的硅化物区域。 硅化物区域中的金属浓度低于第一栅电极的硅化物中的金属浓度。 在包括第二栅电极的上表面的上部中，存在含有浓度高于下部的浓度的金属扩散抑制元件的阻挡层区域。

公开(公告)号：US20090114993A1

公开(公告)日：2009-05-07

申请号：US12093192

申请日：2006-10-24

申请人： Kenzo Manabe

发明人： Kenzo Manabe

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823835 ,  H01L21/28052 ,  H01L21/823842 ,  H01L29/4933 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device includes a silicon substrate; a P channel type field effect transistor including a first gate insulating film on the substrate, a first gate electrode on the first gate insulating film and a first source/drain region; and an N channel type field effect transistor including a second gate insulating film on the substrate, a second gate electrode on the second gate insulating film and a second source/drain region. The entire first gate electrode is made of a metal silicide, and at least in an upper portion including the upper surface of the second gate electrode, a silicide region of the same kind as the metal (M) is provided. The metal concentration in the silicide region is lower than that in the silicide of the first gate electrode. In an upper portion including the upper surface of the second gate electrode, there is a barrier layer region containing a metal diffusion suppressing element at a concentration higher than that in the lower portion.

摘要翻译： 半导体器件包括硅衬底; P沟道型场效应晶体管，其包括在所述基板上的第一栅极绝缘膜，所述第一栅极绝缘膜上的第一栅极电极和第一源极/漏极区域; 以及N沟道型场效应晶体管，其在基板上具有第二栅极绝缘膜，在第二栅极绝缘膜上具有第二栅极电极和第二源极/漏极区域。 整个第一栅电极由金属硅化物制成，并且至少在包括第二栅电极的上表面的上部中，提供与金属（M）相同类型的硅化物区域。 硅化物区域中的金属浓度低于第一栅电极的硅化物中的金属浓度。 在包括第二栅电极的上表面的上部中，存在含有浓度高于下部的浓度的金属扩散抑制元件的阻挡层区域。

公开(公告)号：US07385265B2

公开(公告)日：2008-06-10

申请号：US10489522

申请日：2003-03-27

申请人： Kenzo Manabe ,  Kazuhiko Endo

发明人： Kenzo Manabe ,  Kazuhiko Endo

IPC分类号： H01L29/94

CPC分类号： H01L21/02244 ,  H01L21/02178 ,  H01L21/02247 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545

摘要： A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 μm-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.

摘要翻译： 半导体器件具有MIS（金属绝缘膜 - 半导体）结构，并且在半导体上使用主要含有Al，O和N原子的膜。 或者，半导体器件具有MIS结构，并且在源极和漏极之间的沟道区域上设置主要包含Al，O和N原子的膜作为栅极绝缘膜。 满足0.05毫米栅长半导体晶体管的栅极绝缘膜所需的特性。 特别地，膜中不包含固定电荷，并且杂质扩散减少。

公开(公告)号：US20070138580A1

公开(公告)日：2007-06-21

申请号：US10575785

申请日：2005-06-21

申请人： Kensuke Takahashi ,  Kenzo Manabe ,  Nobuyuki Ikarashi ,  Toru Tatsumi

发明人： Kensuke Takahashi ,  Kenzo Manabe ,  Nobuyuki Ikarashi ,  Toru Tatsumi

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L29/4975 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/66545

摘要： There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi1-X (0 0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X≦0.5) in a n-type MOSFET.

摘要翻译： 提供一种半导体器件，其能够解决CMOS晶体管中的阈值控制的问题，伴随着具有高介电常数的栅极绝缘膜和金属栅极电极的组合，并且显着提高性能而不劣化器件的可靠性 。 半导体器件包括由具有高介电常数的材料构成的栅极绝缘膜和栅电极。 与栅极绝缘膜接触的栅电极的一部分具有以MxSi 1-X（0 0.5），并且在n型MOSFET中等于或小于0.5（X <= 0.5）。

公开(公告)号：US07208787B2

公开(公告)日：2007-04-24

申请号：US10242725

申请日：2002-09-13

申请人： Kenzo Manabe

发明人： Kenzo Manabe

IPC分类号： H01L29/76

CPC分类号： H01L21/02194 ,  C23C14/083 ,  C23C14/5806 ,  C23C14/586 ,  C23C16/405 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3185 ,  H01L28/40 ,  H01L28/56 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66537 ,  H01L29/66545

摘要： A semiconductor device is prepared using an insulating film consisting of a tantalum-tungsten oxide crystal film, a tantalum-molybdenum oxide crystal film, or a laminated film where a silicon oxide, silicon oxynitride or silicon nitride film is laminated on the crystal film. The tantalum-tungsten oxide film is deposited on a substrate under an atmosphere of a mixture of the first material gas comprising tantalum, the second material gas comprising tungsten and an oxidizing agent. For improving a dielectric constant of the tantalum-tungsten or tantalum-molybdenum oxide crystal film, on a Ru substrate with (001) orientation is deposited a oxide crystal film, which is then heated in N2O plasma and subject to rapid thermal nitriding.

摘要翻译： 使用由钽 - 氧化钨晶体膜，钽 - 钼氧化物晶体膜或层叠膜构成的绝缘膜制备半导体器件，其中氧化硅，氮氧化硅或氮化硅膜层压在晶体膜上。 在包含钽的第一材料气体，包含钨的第二材料气体和氧化剂的混合气体的气氛下，将钽 - 氧化钨膜沉积在衬底上。 为了提高钽钨或钽 - 钼氧化物晶体膜的介电常数，在具有（001）取向的Ru衬底上沉积氧化物晶体膜，然后在N 2 O 2等离子体中加热 并经受快速热氮化处理。