公开(公告)号：US4675667A

公开(公告)日：1987-06-23

申请号：US649297

申请日：1984-09-11

申请人： Takashi Nakamura ,  Katsunori Hatanaka ,  Satoshi Omata ,  Yoshiyuki Osada

发明人： Takashi Nakamura ,  Katsunori Hatanaka ,  Satoshi Omata ,  Yoshiyuki Osada

IPC分类号： G02F1/133 ,  G09G3/20 ,  G09G3/36

CPC分类号： G09G3/3655 ,  G09G2310/066 ,  G09G3/2011 ,  G09G3/3614

摘要： In a method for driving a liquid-crystal display panel of the type in which each of display picture elements arranged in a matrix array is provided with a switching transistor; a common electrode is formed on a first base plate disposed in opposed relationship with a second base plate with display picture element electrodes thereon, a liquid crystal being sandwiched between the first and second base plates; and the liquid crystal is driven by an alternating electric field of two voltage levels given by switching the potential of the common electrode between two potential levels during each display cycle, the potential of the common electrode is either linearly or non-linearly decreased during a display period at the lower voltage level of the two voltage levels and the potential of the common electrode is also either linearly or non-linearly increased during a display period at the higher voltage level.

摘要翻译： 在驱动液晶显示面板的方法中，其中排列成矩阵阵列的每个显示图象元件设置有开关晶体管; 公共电极形成在与其上具有显示图像元素电极的第二基板相对置设置的第一基板上，液晶夹在第一和第二基板之间; 并且通过在每个显示周期期间将公共电极的电位切换到两个电位电平之间的两个电压电平的交变电场驱动液晶，在显示期间公共电极的电位线性地或非线性地减小 在两个电压电平的较低电压电平的周期和公共电极的电位在较高电压电平的显示周期期间也是线性或非线性增加的。

公开(公告)号：US4884079A

公开(公告)日：1989-11-28

申请号：US300698

申请日：1989-01-19

申请人： Hiroshi Inoue ,  Satoshi Omata ,  Yoshiyuki Osada ,  Yutaka Inoue ,  Tadashi Yamakawa ,  Hiroshi Satomura

发明人： Hiroshi Inoue ,  Satoshi Omata ,  Yoshiyuki Osada ,  Yutaka Inoue ,  Tadashi Yamakawa ,  Hiroshi Satomura

IPC分类号： G02F1/1368 ,  G06K15/12

CPC分类号： G06K15/1238 ,  G02F1/1368

摘要： An image forming apparatus comprising an exposure light source, a printer head which comprises a group of micro-shutters each controlling the transmission or interruption of light from the exposure light source, and an image bearing so disposed to be irradiated with light signals transmitted through the printer head. The group of micro-shutters are arranged in a matrix comprising a plurality of rows and a plurality of columns. The group of micro-shutters are formed by a substrate having thereon a plurality of segment electrodes each forming a shutter and connected to a drain of a thin film transistor, another substrate having thereon a common electrode, and a liquid crystal interposed between the substrates. The image forming apparatus further comprises means for applying a scanning signal to the gate of the thin film transistor and applying an electric signal corresponding to image information in synchronism with the scanning signal.

摘要翻译： 一种图像形成装置，包括曝光光源，一个打印头，它包括一组控制来自曝光光源的光的传输或中断的微快门，以及一个图像承载件，被设置成照射通过 打印机头。 微型快门组被布置成包括多行和多列的矩阵。 微型快门组由其上具有多个分段电极的基板形成，每个分段电极形成快门并连接到薄膜晶体管的漏极，其上具有公共电极的另一个基板和插入在基板之间的液晶。 图像形成装置还包括用于将扫描信号施加到薄膜晶体管的栅极并且与扫描信号同步地施加与图像信息相对应的电信号的装置。

公开(公告)号：US4881066A

公开(公告)日：1989-11-14

申请号：US220898

申请日：1988-06-20

申请人： Hideo Kanno ,  Shinichi Yamashita ,  Satoshi Omata ,  Masahiko Enari ,  Mitsutoshi Kuno ,  Yoshiyuki Osada

发明人： Hideo Kanno ,  Shinichi Yamashita ,  Satoshi Omata ,  Masahiko Enari ,  Mitsutoshi Kuno ,  Yoshiyuki Osada

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09F9/35 ,  G09G3/20 ,  G09G3/36

CPC分类号： G09G3/3688 ,  G09G2310/0297 ,  G09G3/2011

摘要： An active matrix type display panel comprising a first base plate, a second base plate, and a liquid crystal disposed therebetween. The first base plate has thin film transistors formed thereon in the form of a matrix. The second base plate has a counter electrode formed thereon. The source of the thin film transistor are connected to information signal input electrodes which form counter electrodes of capacitive elements for sampling-and-holding information signals.

摘要翻译： 一种有源矩阵型显示面板，包括第一基板，第二基板和设置在其间的液晶。 第一基板具有以矩阵形式形成在其上的薄膜晶体管。 第二基板在其上形成有对电极。 薄膜晶体管的源极连接到形成用于采样和保持信息信号的电容元件的对电极的信息信号输入电极。

公开(公告)号：US4766477A

公开(公告)日：1988-08-23

申请号：US885336

申请日：1986-07-11

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yoshiyuki Osada ,  Satoshi Omata ,  Yutaka Hirai ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yoshiyuki Osada ,  Satoshi Omata ,  Yutaka Hirai ,  Takashi Nakagiri

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/203 ,  H01L21/205 ,  H01L27/12 ,  H01L29/04 ,  H01L29/167 ,  H01L29/78 ,  H01L29/786 ,  H01L31/0368

CPC分类号： H01L31/03682 ,  H01L29/04 ,  H01L29/167 ,  H01L29/78 ,  H01L29/78675 ,  Y02E10/546 ,  Y10S148/122

摘要： A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.

摘要翻译： 半导体器件主要包括含有选自由碳，硫，氮和氧组成的组中的至少一个原子的多晶硅膜的半导体层。

公开(公告)号：US4816819A

公开(公告)日：1989-03-28

申请号：US799498

申请日：1985-11-19

申请人： Masahiko Enari ,  Shinichi Yamashita ,  Satoshi Omata ,  Mitsutoshi Kuno ,  Hiroshi Inoue ,  Yoshiyuki Osada

发明人： Masahiko Enari ,  Shinichi Yamashita ,  Satoshi Omata ,  Mitsutoshi Kuno ,  Hiroshi Inoue ,  Yoshiyuki Osada

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1345 ,  G02F1/1368 ,  G09G3/36

CPC分类号： G09G3/3677 ,  G09G3/3611 ,  G09G3/3666

摘要： A display panel having N scanning lines to which scan signal are inputted and M data lines to which information signals are inputted, includes transistor groups each connecting in common plural (n) scanning lines among N scanning lines, and a selector for selecting one of N/n scanning line blocks divided by the transistor groups.

摘要翻译： 具有输入扫描信号的N条扫描线和输入信息信号的M条数据线的显示面板包括在N条扫描线中的多条（n条）扫描线共同连接的晶体管组，以及选择N / n个扫描线块由晶体管组分割。

公开(公告)号：US4719501A

公开(公告)日：1988-01-12

申请号：US815113

申请日：1985-12-26

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

IPC分类号： H01L21/285 ,  H01L29/04 ,  H01L29/786 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/18

CPC分类号： H01L21/28537 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/78684 ,  H01L29/8126 ,  H01L29/872 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/108 ,  H01L31/18 ,  Y02E10/546

摘要： A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.

摘要翻译： 半导体元件主要由含有0.01-3原子％的多晶Si薄膜层构成，并且当用预定的蚀刻剂进行蚀刻时，还具有基本上不大于800的最大表面凹凸和/或蚀刻速率的特定范围。

公开(公告)号：US4814842A

公开(公告)日：1989-03-21

申请号：US201259

申请日：1988-05-25

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Satoshi Omata ,  Yoshiyuki Osada ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Satoshi Omata ,  Yoshiyuki Osada ,  Takashi Nakagiri

IPC分类号： H01L21/205 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/78 ,  H01L29/78675 ,  H01L29/78684

摘要： A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

摘要翻译： 薄膜晶体管包括衬底，包括设置在所述衬底上的含有3原子％以下的氢的多晶硅的半导体层，设置在所述半导体层的表面部分中的源极区域和漏极区域，设置在所述衬底上的绝缘层 所述半导体层位于这两个区域之间的部分，设置在所述绝缘层上的栅电极，与源区形成电接触的源电极和与漏区形成电接触的漏极，所述栅之间的重叠部分 通过栅极电极和源极区域之间的绝缘层以及位于所述栅极电极和漏极区域之下的绝缘层的所述栅极电极之间的电极开始宽度为2000或更小。

公开(公告)号：US4982251A

公开(公告)日：1991-01-01

申请号：US511952

申请日：1990-04-17

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  H01L21/205 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/78675

摘要： A semiconductor element comprises its main part constituted of a polycrystalline silicon semiconductor layer containing 0.01 to 1 atomic % of fluorine atoms.

摘要翻译： 半导体元件的主要部分由含有0.01〜1原子％的氟原子的多晶硅半导体层构成。

公开(公告)号：US4921722A

公开(公告)日：1990-05-01

申请号：US786700

申请日：1985-10-11

申请人： Yoshiyuki Osada ,  Hisanori Tsuda ,  Masafumi Sano ,  Satoshi Omata ,  Katsuji Takasu ,  Yutaka Hirai

发明人： Yoshiyuki Osada ,  Hisanori Tsuda ,  Masafumi Sano ,  Satoshi Omata ,  Katsuji Takasu ,  Yutaka Hirai

IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/452 ,  H01L21/205 ,  H01L21/263

CPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.

摘要翻译： 通过形成通式SinHm的氢化硅化合物的气氛形成沉积膜的方法，其中n为1以上的整数，m为2以上的整数，在容纳基板的室内形成 通过激发所述化合物进行分解或聚合，在所述基板上含有硅的沉积膜包括将气态自由基聚合引发剂引入所述​​室并利用光能，由此激发所述化合物以进行其分解或聚合。

公开(公告)号：US4905072A

公开(公告)日：1990-02-27

申请号：US188677

申请日：1988-04-29

申请人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

发明人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

IPC分类号： H01L21/306 ,  H01L29/04

CPC分类号： H01L29/04 ,  H01L21/30604 ,  H01L2924/0002

摘要： A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).

摘要翻译： 半导体器件包括含有不超过3原子％氢原子并且表面不均匀度最大不超过800的多晶硅薄膜的半导体层。 它也可能具有20安培/秒的蚀刻速率。 当用HF，HNO 3和冰醋酸（1:3:6）的混合物蚀刻时。