公开(公告)号：US20180163323A1

公开(公告)日：2018-06-14

申请号：US15891764

申请日：2018-02-08

申请人： Takashi Satoh ,  Naoya Miyoshi ,  Junichi Wada ,  Masahiro Hayashi ,  Seiji Sarayama ,  Haruo Sunakawa ,  Yujirou Ishihara ,  Akira Usui

发明人： Takashi Satoh ,  Naoya Miyoshi ,  Junichi Wada ,  Masahiro Hayashi ,  Seiji Sarayama ,  Haruo Sunakawa ,  Yujirou Ishihara ,  Akira Usui

IPC分类号： C30B29/40 ,  C30B19/04 ,  C30B19/06 ,  C30B19/10 ,  C30B17/00 ,  C30B35/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B9/12 ,  C30B17/00 ,  C30B19/02 ,  C30B19/04 ,  C30B19/06 ,  C30B19/106 ,  C30B29/406 ,  C30B35/007

摘要： A method for producing a group 13 nitride single crystal includes dissolving and crystal growing. The dissolving includes dissolving nitrogen in a mixed melt in a reaction vessel that contains the mixed melt, a seed crystal, and a surrounding member. The mixed melt contains an alkali metal and a group 13 metal. The seed crystal is a seed crystal that is placed in the mixed melt and includes a group 13 nitride crystal in which a principal face is a c-plane. The surrounding member is arranged so as to surround the entire area of a side face of the seed crystal. The crystal growing includes growing a group 13 nitride crystal on the seed crystal.

公开(公告)号：US10100426B2

公开(公告)日：2018-10-16

申请号：US15124794

申请日：2014-11-27

申请人： Takashi Satoh ,  Seiji Sarayama ,  Masahiro Hayashi ,  Naoya Miyoshi ,  Chiharu Kimura ,  Junichi Wada

发明人： Takashi Satoh ,  Seiji Sarayama ,  Masahiro Hayashi ,  Naoya Miyoshi ,  Chiharu Kimura ,  Junichi Wada

IPC分类号： C30B9/10 ,  C30B29/40 ,  C30B9/12 ,  C30B35/00

摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.

公开(公告)号：US20140077218A1

公开(公告)日：2014-03-20

申请号：US14023702

申请日：2013-09-11

申请人： Masahiro Hayashi ,  Takashi Satoh ,  Chiharu Kimura ,  Naoya Miyoshi ,  Akishige Murakami ,  Shinsuke Miyake ,  Junichi Wada ,  Seiji Sarayama

发明人： Masahiro Hayashi ,  Takashi Satoh ,  Chiharu Kimura ,  Naoya Miyoshi ,  Akishige Murakami ,  Shinsuke Miyake ,  Junichi Wada ,  Seiji Sarayama

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B9/12 ,  C30B29/403

摘要： A group 13 nitride crystal having a hexagonal crystal structure contains at least a nitrogen atom and at least one metal atom selected from a group consisting of B, Al, Ga, In and Tl. Dislocation density of basal plane dislocations in a cross section parallel to a c-axis is 104 cm−2 or more.

摘要翻译： 具有六方晶系结构的13族氮化物晶体至少含有氮原子和至少一种选自B，Al，Ga，In和Tl的金属原子。 平行于c轴的截面中的基面位错的位错密度为104cm -2以上。

公开(公告)号：US09404196B2

公开(公告)日：2016-08-02

申请号：US13592555

申请日：2012-08-23

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B9/10 ,  C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/406

摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

摘要翻译： 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度“L”为9.7mm以上，c面中的长度“L”与晶体直径“d”的比率L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

公开(公告)号：US09732435B2

公开(公告)日：2017-08-15

申请号：US13609077

申请日：2012-09-10

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B29/40 ,  C30B7/10 ,  C30B9/00 ,  C30B29/60

CPC分类号： C30B7/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/607

摘要： A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

公开(公告)号：US09123863B2

公开(公告)日：2015-09-01

申请号：US13603678

申请日：2012-09-05

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： H01L33/32 ,  H01L29/04 ,  H01L33/00 ,  H01L29/20 ,  H01L33/38 ,  H01L33/18 ,  H01L33/24

CPC分类号： H01L33/32 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/18 ,  H01L33/24

摘要： A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.

摘要翻译： 13族氮化物晶体具有六方晶系结构，并且至少含有氮原子和至少一种选自B，Al，Ga，In和Tl的金属原子。 13族氮化物晶体包括位于与c轴交叉的横截面的内侧的第一区域和围绕第一区域的外周的至少一部分的第二区域，该第二区域的厚度大于最大直径 并且具有比第一区域的载流子密度高的载流子密度。

公开(公告)号：US20140261157A1

公开(公告)日：2014-09-18

申请号：US14196131

申请日：2014-03-04

申请人： Takashi Satoh ,  Seiji Sarayama ,  Masahiro Hayashi ,  Naoya Miyoshi

发明人： Takashi Satoh ,  Seiji Sarayama ,  Masahiro Hayashi ,  Naoya Miyoshi

IPC分类号： C30B9/12

CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1024

摘要： A method for producing a group 13 nitride crystal, comprises a crystal growth step of reacting nitrogen and a mixed melt containing at least a group 13 metal and at least one of an alkali metal and an alkaline earth metal, in the mixed melt, to grow a nitride crystal on a seed crystal, wherein at least one of the mixed melt and the seed crystal is rotated in the crystal growth step, a relative speed between the mixed melt and the seed crystal in the crystal growth step is repeatedly fluctuated in accordance with one or a plurality of types of predetermined patterns, and a maximum value of the relative speed indicated by the pattern is 0.01 m/s or more.

摘要翻译： 13族氮化物晶体的制造方法包括在混合熔体中使氮与含有至少13族金属和至少一种碱金属和碱土金属的混合熔体反应生长的晶体生长步骤，以生长 在晶种中的氮化物晶体，其中在晶体生长步骤中混合熔体和晶种中的至少一个旋转，晶体生长步骤中的混合熔体和晶种之间的相对速度根据 一种或多种类型的预定图案，并且由图案表示的相对速度的最大值为0.01m / s以上。

公开(公告)号：US20130065010A1

公开(公告)日：2013-03-14

申请号：US13612352

申请日：2012-09-12

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B9/12 ,  C09K11/63 ,  C01B21/06 ,  B32B9/04 ,  B32B3/02

CPC分类号： C30B9/12 ,  C30B29/406 ,  Y10T428/239 ,  Y10T428/26

摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

公开(公告)号：US09863058B2

公开(公告)日：2018-01-09

申请号：US14708583

申请日：2015-05-11

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B29/38 ,  C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/406 ,  Y10T428/239 ,  Y10T428/26

摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

公开(公告)号：US20150247257A1

公开(公告)日：2015-09-03

申请号：US14708583

申请日：2015-05-11

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/406 ,  Y10T428/239 ,  Y10T428/26

摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

摘要翻译： 具有六方晶系结构的氮化镓晶体包括位于与六方晶体结构的c轴交叉的截面的内侧的第一区域，以及包围第一区域的外周的至少一部分的第二区域 横截面。 具有电子束或紫外光激发的第一区域和第二区域中的每一个的发射光谱具有包括氮化镓的带边发射和位于比第一峰的更长波长区域的第二峰的第一峰。 第一峰的峰值强度小于第一区域中的第二峰值的峰值强度，并且第一峰值的峰值强度大于第二区域中的第二峰值的峰值强度。