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41 条记录 (耗时 0.042 秒)

    Time-multiplexed highway line designating system
    1.
    发明授权
    Time-multiplexed highway line designating system 失效
    多路复用公路线路指定系统

    公开(公告)号：US5299187A

    公开(公告)日：1994-03-29

    申请号：US948044

    申请日：1992-09-21

    申请人： Takashi Tabu ,  Kenichi Okabe ,  Masaki Kira

    发明人： Takashi Tabu ,  Kenichi Okabe ,  Masaki Kira

    IPC分类号： H04J3/00 ,  H04J3/08 ,  H04Q11/04 ,  H04Q11/00

    CPC分类号： H04Q11/04

    摘要： A time-multiplexed highway line designating system used in a time divisional electronic switching unit comprises line interface units each being provided corresponding to each line, a storing unit provided in the interface unit for storing time slot information specific to each line processed in a time divisional manner, and a timing generating circuit provided in the interface unit for generating from the time slot information a timing for the line.

    摘要翻译： 在时分电子切换单元中使用的时分多路复用公路线路指定系统包括对应于每条线路提供的线路接口单元，存储单元，设置在接口单元中，用于存储特定于时分处理的每条线路的时隙信息 以及定时生成电路，其设置在所述接口单元中，用于从所述时隙信息生成所述线路的定时。

    Method of manufacturing semiconductor device
    2.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07883960B2

    公开(公告)日：2011-02-08

    申请号：US12409979

    申请日：2009-03-24

    申请人： Masatoshi Fukuda ,  Akiyoshi Hatada ,  Katsuaki Ookoshi ,  Kenichi Okabe ,  Tomonari Yamamoto

    发明人： Masatoshi Fukuda ,  Akiyoshi Hatada ,  Katsuaki Ookoshi ,  Kenichi Okabe ,  Tomonari Yamamoto

    IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L21/8242 ,  H01L21/336

    CPC分类号： H01L27/0629

    摘要： A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成导电层，选择性地去除用于形成电阻元件和栅电极的导电层，在剩余导电层的侧壁上形成侧壁间隔物，形成第一绝缘膜， 在具有侧壁间隔物的半导体衬底上的氮气，通过第一绝缘膜在半导体衬底中注入离子，在通过第一绝缘膜植入离子到半导体衬底中之后，在第一绝缘膜上形成含有氮的第二绝缘膜，并且选择性地 去除第一和第二绝缘膜，使得第一和第二绝缘膜的至少一部分保留在半导体衬底上并在导电层上方。

    Semiconductor device and manufacturing method thereof
    6.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07838401B2

    公开(公告)日：2010-11-23

    申请号：US12550727

    申请日：2009-08-31

    申请人： Hiroyuki Ohta ,  Kenichi Okabe

    发明人： Hiroyuki Ohta ,  Kenichi Okabe

    IPC分类号： H01L21/265

    CPC分类号： H01L21/26506 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers surrounding the source/drain impurity diffusion regions. Each of the carbon layers is provided at an associated of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in direction away from the gate electrode and to surround as profile the associated source/drain impurity diffusion region.

    摘要翻译： 半导体器件包括布置在半导体衬底中的场效应晶体管，该晶体管具有栅电极，源/漏杂质扩散区和围绕源极/漏极杂质扩散区的碳层。 每个碳层设置在源极/漏极杂质扩散区域的相关联处，并且被定位成从远离栅电极的方向偏离源极/漏极延伸部的前边缘，并且作为轮廓围绕相关源 /漏杂质扩散区域。