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    Method of manufacturing semiconductor device
    5.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07883960B2

    公开(公告)日：2011-02-08

    申请号：US12409979

    申请日：2009-03-24

    申请人： Masatoshi Fukuda ,  Akiyoshi Hatada ,  Katsuaki Ookoshi ,  Kenichi Okabe ,  Tomonari Yamamoto

    发明人： Masatoshi Fukuda ,  Akiyoshi Hatada ,  Katsuaki Ookoshi ,  Kenichi Okabe ,  Tomonari Yamamoto

    IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L21/8242 ,  H01L21/336

    CPC分类号： H01L27/0629

    摘要： A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成导电层，选择性地去除用于形成电阻元件和栅电极的导电层，在剩余导电层的侧壁上形成侧壁间隔物，形成第一绝缘膜， 在具有侧壁间隔物的半导体衬底上的氮气，通过第一绝缘膜在半导体衬底中注入离子，在通过第一绝缘膜植入离子到半导体衬底中之后，在第一绝缘膜上形成含有氮的第二绝缘膜，并且选择性地 去除第一和第二绝缘膜，使得第一和第二绝缘膜的至少一部分保留在半导体衬底上并在导电层上方。

    Semiconductor device and manufacturing method thereof
    7.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07838401B2

    公开(公告)日：2010-11-23

    申请号：US12550727

    申请日：2009-08-31

    申请人： Hiroyuki Ohta ,  Kenichi Okabe

    发明人： Hiroyuki Ohta ,  Kenichi Okabe

    IPC分类号： H01L21/265

    CPC分类号： H01L21/26506 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers surrounding the source/drain impurity diffusion regions. Each of the carbon layers is provided at an associated of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in direction away from the gate electrode and to surround as profile the associated source/drain impurity diffusion region.

    摘要翻译： 半导体器件包括布置在半导体衬底中的场效应晶体管，该晶体管具有栅电极，源/漏杂质扩散区和围绕源极/漏极杂质扩散区的碳层。 每个碳层设置在源极/漏极杂质扩散区域的相关联处，并且被定位成从远离栅电极的方向偏离源极/漏极延伸部的前边缘，并且作为轮廓围绕相关源 /漏杂质扩散区域。

    Injection nozzle
    10.
    发明授权
    Injection nozzle 失效
    喷嘴

    公开(公告)号：US5803371A

    公开(公告)日：1998-09-08

    申请号：US744459

    申请日：1996-11-07

    申请人： Tamotsu Sugiyama ,  Haruhide Tanaka ,  Kenichi Okabe ,  Takayuki Ishihara ,  Yasuhiro Kishi ,  Toyofumi Kanamaru

    发明人： Tamotsu Sugiyama ,  Haruhide Tanaka ,  Kenichi Okabe ,  Takayuki Ishihara ,  Yasuhiro Kishi ,  Toyofumi Kanamaru

    IPC分类号： B05B1/00 ,  B05B1/14 ,  B05B15/02

    CPC分类号： B05B1/00 ,  B05B1/005 ,  B05B1/14 ,  B05B15/0241

    摘要： An injection nozzle for blowing air or injecting solvents reduces noise level and facilitates cleaning of injection passages. The injection nozzle includes a nozzle body provided with an opening and an inlet passage communicating with the opening. A plurality of grooves are provided on top and bottom sides of the nozzle body respectively. The nozzle body is also provided with upper and lower cover members, which can be selectively opened or closed. When the cover members are closed, an expansion chamber is defined by the opening and injection passages are defined by the grooves. The fluid to be injected from the inlet passage is expanded once in the expansion chamber and is then distributed through the injection passages for injection. Such expansion and contraction produces an effect of reducing noise level at the time of injection. Furthermore, the insides of the expansion chamber and the injection passages can be cleaned with ease by opening the cover members.

    摘要翻译： 用于吹入空气或注射溶剂的注射喷嘴降低了噪音水平，便于清洗注射通道。 注射喷嘴包括设置有开口的喷嘴体和与开口连通的入口通道。 多个凹槽分别设置在喷嘴体的顶侧和底侧上。 喷嘴体还设置有可以选择性地打开或关闭的上盖和下盖构件。 当盖构件关闭时，膨胀室由开口限定，并且注入通道由凹槽限定。 从入口通道喷射的流体在膨胀室中膨胀一次，然后通过注射通道分配用于注射。 这种膨胀和收缩产生降低注射时的噪音水平的效果。 此外，通过打开盖构件，可以容易地清洁膨胀室和喷射通道的内部。