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公开(公告)号：US07062178B1
公开(公告)日：2006-06-13
申请号：US09857634
申请日：2000-10-05
CPC分类号： G01J3/36 , G01J3/2803 , G02B6/29307 , G02B6/2931 , H01L27/1446 , H01L31/105 , H04B10/07953
摘要： A light demultiplexer in which a signal and a noise in each channel may be distinctly separated is provided. The light demultiplexer comprises a light-receiving element array for receiving light beams demultiplexed every wavelength from a wavelength multiplexed light beam and arranged in a straight line. The light-receiving element array includes a plurality of light-receiving elements for monitoring signals, and a plurality of light-receiving elements for monitoring noises. The light-receiving elements for monitoring signals and the light-receiving elements for monitoring noise are alternately arrayed in a straight line the direction thereof is the same as that of the arrangement of the demultiplexed light beams.
摘要翻译： 提供其中每个通道中的信号和噪声可以被明显分离的光解复用器。 光解复用器包括光接收元件阵列，用于接收从波长复用光束每波长解复用的光束并且被布置成直线。 光接收元件阵列包括用于监视信号的多个光接收元件和用于监视噪声的多个光接收元件。 用于监视信号的光接收元件和用于监测噪声的光接收元件交替地排列成直线，其方向与解复用的光束的布置方向相同。
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公开(公告)号：US06828541B2
公开(公告)日：2004-12-07
申请号：US10088268
申请日：2002-09-23
IPC分类号： H01L2700
CPC分类号： H01L27/14643 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014
摘要： A light-receiving element array is provided in which the degradation of characteristic thereof due to the crosstalk may be prevented. An n-InP layer, an i-InGaAs layer, and an n-InP layer are stacked on an n-InP substrate. Zn is diffused into the topmost n-InP layer to form a p-type diffused region, resulting in a pin-photodiode. A passivation layer is deposited on the structure to a thickness such that a nonreflective condition is satisfied. On the passivation film, a light-shielding film is provided so as to cover the area between light-receiving elements.
摘要翻译： 提供了一种光接收元件阵列，其中可以防止由串扰引起的特性劣化。 在n-InP衬底上堆叠n-InP层，i-InGaAs层和n-InP层。 Zn扩散到最上面的n-InP层中以形成p型扩散区域，得到pin光电二极管。 钝化层沉积在结构上以使得满足非反射条件的厚度。 在钝化膜上设置遮光膜以覆盖光接收元件之间的区域。
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3.发明授权Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure 失效外延生长复合半导体膜和化合物半导体多层结构公开(公告)号：US06815792B2
公开(公告)日：2004-11-09
申请号：US10401215
申请日：2003-03-27
申请人： Hisao Nagata , Yasunori Arima , Nobuyuki Komaba
发明人： Hisao Nagata , Yasunori Arima , Nobuyuki Komaba
IPC分类号： H01L2714
CPC分类号： H01L31/105 , H01L31/184 , H01L31/1844 , Y02E10/544
摘要： The present invention provides an epitaxially grown compound semiconductor film having a low density of crystal defects which are generated during the course of crystal growth of a compound semiconductor. The present invention also provides a compound semiconductor multi-layer structure including an n-type InP substrate, an n-type InP buffer layer, an undoped InGaAs light-absorbing layer, and an n-type InP cap layer, the layers being successively grown on the substrate through MOCVD. In the InGaAs layer, the compositional ratio of In/Ga is cyclically varied in a thickness direction (cyclic intervals: 80 nm) so as to fall within a range of ±2% with respect to a predetermined compositional ratio that establishes lattice matching between InGaAs and InP; specifically, within a range between 0.54/0.46 (i.e., In0.54Ga0.46As) and 0.52/0.48 (i.e., In0.52Ga0.48As)
摘要翻译： 本发明提供了在化合物半导体的晶体生长过程中产生的具有低密度晶体缺陷的外延生长化合物半导体膜。 本发明还提供了包括n型InP衬底，n型InP缓冲层，未掺杂的InGaAs光吸收层和n型InP覆盖层的化合物半导体多层结构，这些层依次生长 通过MOCVD在衬底上。 在InGaAs层中，In / Ga的组成比在厚度方向（循环间隔：80nm）中循环变化，以相对于在InGaAs之间建立晶格匹配的规定组成比落在±2％的范围内 和InP; 具体地，在0.54 / 0.46（即In0.54Ga0.4As）和0.52 / 0.48（即In0.52Ga0.48As）之间的范围内，
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公开(公告)号：US20050121782A1
公开(公告)日：2005-06-09
申请号：US11002428
申请日：2004-12-03
CPC分类号： H01L21/6835 , B01L3/5085 , B01L3/5088 , B01L2200/12 , B01L2300/0829 , B01L2300/165 , C12M23/12 , H01L2924/3025
摘要： Concave parts arranged with a predetermined pattern on the surface of a plate substrate is formed. Wettability of the concave part surface is made to differ from that of the surface of a flat part between the concave parts. Particularly, in the case of an aqueous liquid, by forming water repellency film on the flat part, liquid can be stably retained on the concave part and prevented from spilling over to the adjacent concave part.
摘要翻译： 形成在板基板的表面上以规定图案排列的凹部。 使凹部表面的润湿性与凹部之间的平坦部的表面的润湿性不同。 特别地，在水性液体的情况下，通过在平坦部分上形成防水膜，可以将液体稳定地保持在凹部上并防止溢出到相邻的凹部。
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公开(公告)号：US20090213461A1
公开(公告)日：2009-08-27
申请号：US12403399
申请日：2009-03-13
申请人： Naoko Hikichi , Kenichi Nakama , Yasunori Arima
发明人： Naoko Hikichi , Kenichi Nakama , Yasunori Arima
IPC分类号： G02B5/18
CPC分类号： G02B5/1871 , G02B27/1086
摘要： An optical module according to the invention can achieve an optical system using a transmission-type diffraction grating for bending the optical path of incident light with a specific wavelength by about 90°. A substrate of the transmission-type diffraction grating is mounted at an angle in a range of +5° with respect to the design incident angle α of the incident light. The optical system can be applied to a light multiplexing/demultiplexing module.
摘要翻译： 根据本发明的光学模块可以实现使用透射型衍射光栅的光学系统，用于将特定波长的入射光的光路弯曲约90°。 透射型衍射光栅的基板相对于入射光的设计入射角α以+ 5°的范围的角度安装。 光学系统可以应用于光复用/解复用模块。
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公开(公告)号：US07538945B2
公开(公告)日：2009-05-26
申请号：US11318588
申请日：2005-12-28
申请人： Naoko Hikichi , Kenichi Nakama , Yasunori Arima
发明人： Naoko Hikichi , Kenichi Nakama , Yasunori Arima
IPC分类号： G02B5/18
CPC分类号： G02B5/1871 , G02B27/1086
摘要： An optical module can achieve an optical system using a transmission-type diffraction grating for bending the optical path of incident light with a specific wavelength by about 90°. A substrate of the transmission-type diffraction grating is mounted at an angle in a range of ±5° with respect to the design incident angle α of the incident light. The optical system can be applied to a light multiplexing/demultiplexing module.
摘要翻译： 光学模块可以实现使用透射型衍射光栅的光学系统，用于将特定波长的入射光的光路弯曲约90°。 透射型衍射光栅的基板相对于入射光的设计入射角α以±5°的范围的角度安装。 光学系统可以应用于光复用/解复用模块。
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公开(公告)号：US20060153023A1
公开(公告)日：2006-07-13
申请号：US11318588
申请日：2005-12-28
申请人： Naoko Hikichi , Kenichi Nakama , Yasunori Arima
发明人： Naoko Hikichi , Kenichi Nakama , Yasunori Arima
IPC分类号： G11B7/00
CPC分类号： G02B5/1871 , G02B27/1086
摘要： An optical module according to the invention can achieve an optical system using a transmission-type diffraction grating for bending the optical path of incident light with a specific wavelength by about 90°. A substrate of the transmission-type diffraction grating is mounted at an angle in a range of ±5° with respect to the design incident angle α of the incident light. The optical system can be applied to a light multiplexing/demultiplexing module.
摘要翻译： 根据本发明的光学模块可以实现使用透射型衍射光栅的光学系统，用于将特定波长的入射光的光路弯曲约90°。 透射型衍射光栅的基板相对于入射光的设计入射角α以±5°的范围的角度安装。 光学系统可以应用于光复用/解复用模块。
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公开(公告)号：US20060170915A1
公开(公告)日：2006-08-03
申请号：US11341857
申请日：2006-01-30
申请人： Koichiro Nakamura , Koji Fujita , Koki Tanamura , Yasunori Arima
发明人： Koichiro Nakamura , Koji Fujita , Koki Tanamura , Yasunori Arima
IPC分类号： G01N1/10
CPC分类号： G01N21/55 , B01L3/5085 , B01L2200/12 , B01L2300/0654 , B01L2300/0819 , B01L2300/161 , G01N21/03 , G01N21/21 , G01N21/253 , G01N2021/0325 , G01N2021/0346 , G01N2021/0378 , G01N2035/00158
摘要： A masking pattern is performed on a substrate by using materials that are weakly adhered to the substrate, and then the masked substrate is etched. Since the mask is weakly adhered to the substrate, the mask is peeled off from the surface of the substrate, so that a gap is generated between the mask and the substrate, and then anisotropic etching is performed. According to this method, it is possible to easily manufacture an optical measurement substrate having recesses whose sectional shape can be approximated to a curve having inflection points. Therefore, optical characteristics of a minute amount of substances can be evaluated efficiently without the loss of incident and reflected light even when measuring light is incident at an angle of less than 45 degrees.
摘要翻译： 通过使用弱粘附于衬底的材料在衬底上进行掩模图案，然后蚀刻掩模衬底。 由于掩模弱粘附到基板上，所以掩模从基板的表面剥离，从而在掩模和基板之间产生间隙，然后进行各向异性蚀刻。 根据该方法，可以容易地制造具有可以近似为具有拐点的曲线的具有凹部的光学测量基板。 因此，即使当以小于45度的角度入射测量光时，也能够有效地评价微量物质的光学特性，而不会引起入射和反射光的损失。
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