Compound superconducting wire and method of manufacturing the same
    7.
    发明授权
    Compound superconducting wire and method of manufacturing the same 失效
    复合超导线及其制造方法

    公开(公告)号:US4990411A

    公开(公告)日:1991-02-05

    申请号:US363720

    申请日:1989-06-09

    摘要: A composite member is prepared which comprises a core which will have a compound superconducting layer when heat-treated, and a stock for forming a stabilizing member made of copper and surrounding the core. The composite member is heat-treated in an oxidizing atmosphere, thus forming a copper-oxide thin layer on the surface of the stock. Thereafter, the composite member is heat-treated in a non-oxidizing atmosphere or in an atmosphere having an oxygen partial pressure which is too low to allow the forming of copper oxide. As a result, a compound superconducting wire is made which comprises a member including a compound superconductor, a diffusion-preventing layer made of oxide and surrounding the member, and a stabilizing member made of copper and surrounding the layer.

    摘要翻译: 制备复合构件,其包括在热处理时将具有化合物超导层的芯,以及用于形成由铜制成并围绕芯的稳定构件的原料。 复合构件在氧化气氛中进行热处理,从而在坯料表面形成氧化铜薄层。 此后,在非氧化性气氛或氧分压太低的气氛中对复合构件进行热处理,不能形成氧化铜。 结果,制成复合超导线,其包括包括复合超导体的构件,由氧化物构成的包围该构件的防扩散层,以及围绕该层的铜制稳定构件。

    Method for production of semiconductor device
    8.
    发明授权
    Method for production of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US06306756B1

    公开(公告)日:2001-10-23

    申请号:US09580922

    申请日:2000-05-26

    IPC分类号: H01L214763

    CPC分类号: H01L21/76882

    摘要: A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film and causing never melting to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches. The formation of the interconnection is also accomplished by forming a conductive film on the surface of a semiconducting substrate having trenches formed therein, exerting thereon uniaxial stress from above the semiconducting substrate, heat treating the formed conductive film thereby flowing the conductive film, to fill the trenches, and polishing the surface of the semiconducting substrate.

    摘要翻译: 公开了一种制造半导体器件的方法,该半导体器件具有形成在半导体衬底中的电极线,其包括制备半导体衬底,该半导体衬底具有在预定形成电极线的区域中预先形成的沟槽和/或接触孔,形成导电膜 主要是在半导体基板的表面上选自Cu,Ag和Au中的至少一个元件,在至少供给氧化气体的同时对叠加的Cu膜进行热处理,从而使Cu膜流动,从而不会熔化以填充 沟槽和/或接触孔,并且通过抛光导电膜的掉落在电极线的区域外部并且完成电极线的部分去除。 在热处理期间,除了氧化气体之外还提供还原气体以引起局部氧化还原反应,并使导电膜流通和/或流动,从而完成沟槽中导电膜的实施例。 互连的形成还可以通过在其上形成有沟槽的半导体衬底的表面上形成导电膜,在半导体衬底上方施加单轴应力,热处理形成的导电膜从而使导电膜流动,从而填充 沟槽,并抛光半导体衬底的表面。

    Method for production of semiconductor device
    9.
    发明授权
    Method for production of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号:US6090701A

    公开(公告)日:2000-07-18

    申请号:US521088

    申请日:1995-06-20

    IPC分类号: H01L21/768 H01L21/4763

    CPC分类号: H01L21/76882

    摘要: A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches.

    摘要翻译: 公开了一种制造半导体器件的方法,该半导体器件具有形成在半导体衬底中的电极线,其包括制备半导体衬底,该半导体衬底具有在预定形成电极线的区域中预先形成的沟槽和/或接触孔,形成导电膜 主要是在半导体基板的表面上选自Cu,Ag和Au中的至少一个元件,在至少供给氧化气体的同时对叠加的Cu膜进行热处理,从而使Cu膜流过以填充沟槽和/或 接触孔,并且通过抛光导电膜的掉在电极线的区域外部并且完成电极线的部分去除。 在热处理期间,除了氧化气体之外还提供还原气体以引起局部氧化还原反应,并使导电膜流通和/或流动,从而完成沟槽中导电膜的实施例。