公开(公告)号：US5767009A

公开(公告)日：1998-06-16

申请号：US798471

申请日：1997-02-10

申请人： Takayuki Yoshida ,  Takashi Otsuka ,  Hiroaki Fujimoto ,  Tadaaki Mimura ,  Ichiro Yamane ,  Takio Yamashita ,  Toshio Matsuki ,  Yoshiaki Kasuga

发明人： Takayuki Yoshida ,  Takashi Otsuka ,  Hiroaki Fujimoto ,  Tadaaki Mimura ,  Ichiro Yamane ,  Takio Yamashita ,  Toshio Matsuki ,  Yoshiaki Kasuga

IPC分类号： H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/18 ,  H01L21/44

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/552 ,  H01L24/29 ,  H01L25/18 ,  H01L2224/1147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107

摘要： The present invention reduces crosstalk noise, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip (1) having a first electrode pad (2) and a first wiring layer (9), and a second semiconductor chip (5) having a second electrode pad (6) and a second wiring layer (10). A bump (4) is provided for electrically coupling the first electrode pad (2) and the second electrode pad (6). An insulation layer 8 is disposed between confronting surfaces of the first semiconductor chip (1) and the second semiconductor chip (5). An electro-conductive layer (7) is disposed between the confronting surfaces of the first semiconductor chip and the second semiconductor chip.

摘要翻译： 本发明减少串扰噪声，其是由于在第一半导体芯片的各个布线层的每一个中运行的信号与以小间隙堆叠在一起的第二半导体芯片之间的干扰而发生的。 半导体器件包括具有第一电极焊盘（2）和第一布线层（9）的第一半导体芯片（1）和具有第二电极焊盘（6）和第二布线层 10）。 提供凸起（4）用于电耦合第一电极焊盘（2）和第二电极焊盘（6）。 绝缘层8设置在第一半导体芯片（1）和第二半导体芯片（5）的相对表面之间。 导电层（7）设置在第一半导体芯片和第二半导体芯片的相对表面之间。

公开(公告)号：US5821625A

公开(公告)日：1998-10-13

申请号：US636651

申请日：1996-04-23

申请人： Takayuki Yoshida ,  Takashi Otsuka ,  Hiroaki Fujimoto ,  Tadaaki Mimura ,  Ichiro Yamane ,  Takio Yamashita ,  Toshio Matsuki ,  Yoshiaki Kasuga

发明人： Takayuki Yoshida ,  Takashi Otsuka ,  Hiroaki Fujimoto ,  Tadaaki Mimura ,  Ichiro Yamane ,  Takio Yamashita ,  Toshio Matsuki ,  Yoshiaki Kasuga

IPC分类号： H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/18 ,  H01L23/02 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/552 ,  H01L24/29 ,  H01L25/18 ,  H01L2224/1147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107

摘要： The present invention reduces crosstalk, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip 1 having a first electrode pad 2 and a first wiring layer 9 in the main surface, and a second semiconductor chip 5 having a second electrode pad 6 and a second wiring layer 10 in the main surface confronting the first semiconductor chip. A bump 4 is provided for electrically coupling the first electrode pad 2 and the second electrode pad 6 together. An insulation layer 8 is disposed between the main surfaces of first semiconductor chip 1 and second semiconductor chip 5. An electro-conductive layer 7 is disposed between the main confronting surfaces of the first semiconductor chip and the second semiconductor chip.

摘要翻译： 本发明减少串扰，其是由于在第一半导体芯片的各个布线层的每一个中运行的信号与以小间隙堆叠在表面之间的第二半导体芯片之间的干扰而发生的。 该半导体器件包括在主表面上具有第一电极焊盘2和第一布线层9的第一半导体芯片1和第二半导体芯片5，第二半导体芯片5在主表面中具有第二电极焊盘6和第二布线层10 第一个半导体芯片。 凸块4被设置用于将第一电极焊盘2和第二电极焊盘6电耦合在一起。 绝缘层8设置在第一半导体芯片1和第二半导体芯片5的主表面之间。导电层7设置在第一半导体芯片和第二半导体芯片的主要相对表面之间。

公开(公告)号：US20120052409A1

公开(公告)日：2012-03-01

申请号：US13219303

申请日：2011-08-26

申请人： Tomoyuki KOMORI ,  Takashi Otsuka ,  Atsushi Omote

发明人： Tomoyuki KOMORI ,  Takashi Otsuka ,  Atsushi Omote

IPC分类号： H01M8/04 ,  H01M8/10

CPC分类号： H01M4/9016 ,  H01M8/0293 ,  H01M8/086 ,  H01M8/1016

摘要： A fuel cell capable of operating under a high temperature environment and under a low humidity environment and a method for generating an electric power with use of the fuel cell. The fuel cell comprises an electrolyte membrane, an anode electrode, and an cathode electrode. In each of the anode electrode and the cathode electrode, a catalyst is held on a catalyst support, and an electrolyte covers the catalyst and the catalyst support. The cathode electrolyte is composed of SnO2, NH3, H2O, and H3PO4. A molar ratio X represented by X═NH3/SnO2 is not less than 0.2 and not more than 5, and a molar ratio Y represented by Y═P/Sn is not less than 1.6 and not more than 3.

摘要翻译： 一种能够在高温环境下和低湿度环境下工作的燃料电池和使用该燃料电池产生电力的方法。 燃料电池包括电解质膜，阳极电极和阴极电极。 在阳极电极和阴极电极中，催化剂保持在催化剂载体上，并且电解质覆盖催化剂和催化剂载体。 阴极电解质由SnO2，NH3，H2O和H3PO4组成。 由X = NH 3 / SnO 2表示的摩尔比X不小于0.2且不大于5，由Y = P / Sn表示的摩尔比Y不小于1.6且不大于3。

公开(公告)号：US20110053044A1

公开(公告)日：2011-03-03

申请号：US12871266

申请日：2010-08-30

申请人： Yuji Zenitani ,  Takashi Otsuka ,  Tomoko Suzuki ,  Tomoyuki Komori

发明人： Yuji Zenitani ,  Takashi Otsuka ,  Tomoko Suzuki ,  Tomoyuki Komori

IPC分类号： H01M8/10 ,  H01M8/02

CPC分类号： H01M8/04701 ,  G01N27/4074 ,  H01B1/122 ,  H01M8/04089 ,  H01M8/1016 ,  H01M8/12 ,  H01M2300/0068 ,  H01M2300/0094 ,  Y02P70/56

摘要： A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

公开(公告)号：US20080238561A1

公开(公告)日：2008-10-02

申请号：US12058231

申请日：2008-03-28

申请人： Takashi Otsuka ,  Hisato Takeuchi

发明人： Takashi Otsuka ,  Hisato Takeuchi

IPC分类号： H03B5/32 ,  H03B5/36

CPC分类号： H03B5/364

摘要： For a piezoelectric oscillator according to the present invention, an oscillator circuit includes: a piezoelectric vibrator; an NMOS transistor and a PMOS transistor that constitute an amplifier connected in parallel to the piezoelectric vibrator; and load capacitors connected in parallel to the piezoelectric vibrator. The gate terminals of the NMOS transistor and the PMOS transistor, which are constituents of the amplifier, are connected by a DC cut capacitor, and the gate terminal of the NMOS transistor and the output terminal of the amplifier are connected by a feedback resistor. An arbitrary bias voltage, to be applied to the gate terminal of the PMOS transistor via a high-frequency elimination resistor, is generated by a circuit provided by a diode-connected, second PMOS transistor.

摘要翻译： 对于根据本发明的压电振荡器，振荡器电路包括：压电振动器; 构成与压电振子并联连接的放大器的NMOS晶体管和PMOS晶体管; 并将负载电容并联连接到压电振动器。 作为放大器的组成部分的NMOS晶体管和PMOS晶体管的栅极端子由直流切断电容器连接，NMOS晶体管的栅极端子和放大器的输出端子通过反馈电阻器连接。 通过由二极管连接的第二PMOS晶体管提供的电路产生经由高频消除电阻施加到PMOS晶体管的栅极端子的任意偏置电压。

公开(公告)号：US07313980B2

公开(公告)日：2008-01-01

申请号：US11248609

申请日：2005-10-13

申请人： Takashi Otsuka ,  Yukitsugu Hirota ,  Kensuke Osamura ,  Masaharu Nagano ,  Shinya Kobayashi

发明人： Takashi Otsuka ,  Yukitsugu Hirota ,  Kensuke Osamura ,  Masaharu Nagano ,  Shinya Kobayashi

IPC分类号： F16H59/00 ,  F16H61/00 ,  F16H63/00 ,  B60K17/04 ,  B60K17/12

CPC分类号： F16H59/10 ,  F16H61/12 ,  F16H61/2807 ,  F16H2061/301 ,  F16H2061/323 ,  F16H2061/326 ,  Y10T74/19251 ,  Y10T74/2003 ,  Y10T74/20085

摘要： An operating position select device has a select lever unit, a mode shift unit to shift operation modes of the automatic transmission, and an assist actuator controlled by a control unit. A first connecting member of the select lever and a second connecting member of the mode shift unit are relatively movable to a limit amount to each other and integrally movable beyond the limit amount with each other. The positions of the members are detected by an operating position sensor and an assist position sensor, respectively. The actuator is driven so that a difference between an operating position and an assist position may be reduced, but prohibited from driving when the difference is kept out of a permissible range for a predetermined period during rest of the actuator.

摘要翻译： 操作位置选择装置具有选择杆单元，用于移动自动变速器的操作模式的模式换档单元和由控制单元控制的辅助致动器。 选择杆的第一连接构件和模式换档单元的第二连接构件相对于彼此相对移动到极限量并且能够彼此超过极限量一体地移动。 构件的位置分别由操作位置传感器和辅助位置传感器检测。 致动器被驱动，使得可以减小操作位置和辅助位置之间的差异，但是当在致动器的休息期间将差超过允许范围达预定时间段时禁止驱动。

公开(公告)号：US20050066759A1

公开(公告)日：2005-03-31

申请号：US10950628

申请日：2004-09-28

申请人： Yukitsugu Hirota ,  Takashi Otsuka

发明人： Yukitsugu Hirota ,  Takashi Otsuka

IPC分类号： B60K20/00 ,  B60K20/02 ,  F16H59/00 ,  F16H59/10 ,  F16H61/24 ,  F16H61/28

CPC分类号： F16H61/32 ,  F16H59/105 ,  F16H2061/323 ,  F16H2061/326 ,  Y10T74/20018 ,  Y10T74/2003

摘要： An operating position select device for an automatic transmission has a select lever unit having a select lever, a mode shift unit mounted on the automatic transmission to shift operation modes of the automatic transmission, a first and second control cables and others for mechanically connecting the select lever and the mode shift unit, and an actuator for outputting assist torque to shift the mode shift unit. An operating angle sensor detects an operating angle of the select lever and an assist angle sensor detects an assist angle of the assist actuator. A control unit computes a non-coupling amount of the control cables and others to determine a compensation amount and controls drive current supplied to the assist actuator based on the operating angle, the assist angle, and the compensation amount.

摘要翻译： 用于自动变速器的操作位置选择装置具有选择杆单元，其具有选择杆，安装在自动变速器上的换档单元以移动自动变速器的操作模式，第一和第二控制线等，用于机械地连接选择 杠杆和模式换档单元，以及用于输出辅助转矩以移动模式换档单元的致动器。 操作角度传感器检测选择杆的操作角度，辅助角度传感器检测辅助致动器的辅助角度。 控制单元计算控制电缆等的非耦合量，以确定补偿量，并根据操作角度，辅助角度和补偿量来控制提供给辅助致动器的驱动电流。

公开(公告)号：US5316271A

公开(公告)日：1994-05-31

申请号：US768989

申请日：1991-11-06

申请人： Takashi Otsuka ,  Kenji Yamamoto ,  Mototsugu Osada ,  Tadao Taniguchi ,  Yoshifumi Shigeta

发明人： Takashi Otsuka ,  Kenji Yamamoto ,  Mototsugu Osada ,  Tadao Taniguchi ,  Yoshifumi Shigeta

IPC分类号： B22D41/14

CPC分类号： B22D41/14

摘要： The present invention relates to a discharge regulator of molten metal, which can be disposed approximately vertically at the bottom portion of a molten metal vessel, characterized in that the regulator consists of a rotary nozzle, a nozzle carrying brick and a sleeve or of a rotary nozzle and a nozzle carrying brick, two or more recessed notches or openings are provided in at least either one of said nozzle carrying brick and said sleeve, the surface of said nozzle opening of the rotary nozzle, which pierces through at least one nozzle hole, is supported slidably to and in close contact with the inner peripheral surface of said nozzle carrying brick or said sleeve, and said rotary nozzle is equipped with a rotary mechanism mounted in such a manner that the upper portion of said rotary nozzle is brought into contact with the molten metal.

摘要翻译： PCT No.PCT / JP89 / 00550 Sec。 371日期1991年11月6日 102（e）日期1991年11月6日PCT提交1989年6月1日PCT公布。 出版物WO91 / 16275 日本1991年10月31日。本发明涉及熔融金属的排放调节器，其可以大致垂直地设置在熔融金属容器的底部，其特征在于调节器由旋转喷嘴，喷嘴承载砖 并且在所述喷嘴承载砖和所述套筒中的至少一个中设置有套筒或旋转喷嘴和承载砖的喷嘴，两个或更多个凹口或开口，所述喷嘴承载砖和所述套筒的所述喷嘴开口的表面， 通过至少一个喷嘴孔被可滑动地支撑并与所述喷嘴承载砖或所述套筒的内周表面紧密接触，并且所述旋转喷嘴配备有旋转机构，所述旋转机构安装成使得所述 旋转喷嘴与熔融金属接触。

公开(公告)号：USD341110S

公开(公告)日：1993-11-09

申请号：US752239

申请日：1991-08-28

申请人： Toshiaki Kobayashi ,  Takashi Otsuka

设计人： Toshiaki Kobayashi ,  Takashi Otsuka

公开(公告)号：US08518595B2

公开(公告)日：2013-08-27

申请号：US13617793

申请日：2012-09-14

申请人： Yuji Zenitani ,  Takashi Otsuka ,  Tomoko Suzuki ,  Tomoyuki Komori

发明人： Yuji Zenitani ,  Takashi Otsuka ,  Tomoko Suzuki ,  Tomoyuki Komori

IPC分类号： H01M8/10 ,  H01M8/00

CPC分类号： H01M8/04701 ,  G01N27/4074 ,  H01B1/122 ,  H01M8/04089 ,  H01M8/1016 ,  H01M8/12 ,  H01M2300/0068 ,  H01M2300/0094 ,  Y02P70/56

摘要： A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

摘要翻译： 提供了在不低于100℃的温度范围内显示有利的质子传导性的质子传导结构及其制造方法。 将含有Sn，Zr，Ti或Si的焦磷酸盐与磷酸混合后，将混合物保持在不低于80℃且不超过150℃的温度下，然后保持在不温度 小于200℃且不超过400℃以制造质子传导结构。 本发明的质子传导结构具有由焦磷酸锡制成的芯和在芯的表面上形成的涂层，所述涂层含有Sn和O，并且相对于砂轮的Sn具有配位数O 比6。