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公开(公告)号：US20110053044A1
公开(公告)日：2011-03-03
申请号：US12871266
申请日：2010-08-30
申请人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
发明人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
CPC分类号： H01M8/04701 , G01N27/4074 , H01B1/122 , H01M8/04089 , H01M8/1016 , H01M8/12 , H01M2300/0068 , H01M2300/0094 , Y02P70/56
摘要： A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.
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公开(公告)号：US20110305963A1
公开(公告)日：2011-12-15
申请号：US13218246
申请日：2011-08-25
申请人： Yuji ZENITANI , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
发明人： Yuji ZENITANI , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
IPC分类号： H01M8/04
CPC分类号： H01M8/04701 , G01N27/4074 , H01B1/122 , H01M8/04089 , H01M8/1016 , H01M8/12 , H01M2300/0068 , H01M2300/0094 , Y02P70/56
摘要： A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.
摘要翻译： 提供了在不低于100℃的温度范围内显示有利的质子传导性的质子传导结构及其制造方法。 将含有Sn，Zr，Ti或Si的焦磷酸盐与磷酸混合后，将混合物保持在不低于80℃且不超过150℃的温度下，然后保持在不温度 小于200℃且不超过400℃以制造质子传导结构。 本发明的质子传导结构具有由焦磷酸锡制成的芯和在芯的表面上形成的涂层，所述涂层含有Sn和O，并且相对于砂轮的Sn具有配位数O 比6。
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公开(公告)号：US08029941B2
公开(公告)日：2011-10-04
申请号：US12871266
申请日：2010-08-30
申请人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
发明人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
CPC分类号： H01M8/04701 , G01N27/4074 , H01B1/122 , H01M8/04089 , H01M8/1016 , H01M8/12 , H01M2300/0068 , H01M2300/0094 , Y02P70/56
摘要： A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of greater than 6.
摘要翻译： 提供了在不低于100℃的温度范围内显示有利的质子传导性的质子传导结构及其制造方法。 将含有Sn，Zr，Ti或Si的焦磷酸盐与磷酸混合后，将混合物保持在不低于80℃且不超过150℃的温度下，然后保持在不温度 小于200℃且不超过400℃以制造质子传导结构。 本发明的质子传导结构具有由焦磷酸锡制成的芯和在芯的表面上形成的涂层，所述涂层含有Sn和O，并且具有相对于Sn的配位数O 比6。
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公开(公告)号：US08518595B2
公开(公告)日：2013-08-27
申请号：US13617793
申请日：2012-09-14
申请人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
发明人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
CPC分类号： H01M8/04701 , G01N27/4074 , H01B1/122 , H01M8/04089 , H01M8/1016 , H01M8/12 , H01M2300/0068 , H01M2300/0094 , Y02P70/56
摘要： A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.
摘要翻译： 提供了在不低于100℃的温度范围内显示有利的质子传导性的质子传导结构及其制造方法。 将含有Sn，Zr，Ti或Si的焦磷酸盐与磷酸混合后，将混合物保持在不低于80℃且不超过150℃的温度下，然后保持在不温度 小于200℃且不超过400℃以制造质子传导结构。 本发明的质子传导结构具有由焦磷酸锡制成的芯和在芯的表面上形成的涂层，所述涂层含有Sn和O，并且相对于砂轮的Sn具有配位数O 比6。
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公开(公告)号：US20130071766A1
公开(公告)日：2013-03-21
申请号：US13617793
申请日：2012-09-14
申请人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
发明人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
CPC分类号： H01M8/04701 , G01N27/4074 , H01B1/122 , H01M8/04089 , H01M8/1016 , H01M8/12 , H01M2300/0068 , H01M2300/0094 , Y02P70/56
摘要： A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.
摘要翻译： 提供了在不低于100℃的温度范围内显示有利的质子传导性的质子传导结构及其制造方法。 将含有Sn，Zr，Ti或Si的焦磷酸盐与磷酸混合后，将混合物保持在不低于80℃且不超过150℃的温度下，然后保持在不温度 小于200℃且不超过400℃以制造质子传导结构。 本发明的质子传导结构具有由焦磷酸锡制成的芯和在芯的表面上形成的涂层，所述涂层含有Sn和O，并且相对于砂轮的Sn具有配位数O 比6。
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公开(公告)号：US08298718B2
公开(公告)日：2012-10-30
申请号：US13218246
申请日：2011-08-25
申请人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
发明人： Yuji Zenitani , Takashi Otsuka , Tomoko Suzuki , Tomoyuki Komori
CPC分类号： H01M8/04701 , G01N27/4074 , H01B1/122 , H01M8/04089 , H01M8/1016 , H01M8/12 , H01M2300/0068 , H01M2300/0094 , Y02P70/56
摘要： A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.
摘要翻译： 提供了在不低于100℃的温度范围内显示有利的质子传导性的质子传导结构及其制造方法。 将含有Sn，Zr，Ti或Si的焦磷酸盐与磷酸混合后，将混合物保持在不低于80℃且不超过150℃的温度下，然后保持在不温度 小于200℃且不超过400℃以制造质子传导结构。 本发明的质子传导结构具有由焦磷酸锡制成的芯和在芯的表面上形成的涂层，所述涂层含有Sn和O，并且相对于砂轮的Sn具有配位数O 比6。
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公开(公告)号：US08497087B2
公开(公告)日：2013-07-30
申请号：US11275900
申请日：2006-02-02
申请人： Nobuharu Tsujimoto , Tomoko Suzuki , Hisao Ito
发明人： Nobuharu Tsujimoto , Tomoko Suzuki , Hisao Ito
CPC分类号： C07K14/245 , C12P13/04 , C12P13/08 , C12P13/222
摘要： A method for producing a target substance by utilizing a microorganism by culturing the microorganism in a medium to produce and accumulate the target substance in the medium and collecting the target substance from the culture is described. The microorganism is a mutant recombinant strain in which maltose assimilation is controlled by reducing or eliminating the interaction between IIAGlc protein of the glucose PTS and a protein involved in non-PTS uptake of maltose.
摘要翻译： 描述了通过在培养基中培养微生物来生产和积累目标物质并从培养物中收集目标物质的微生物生产目标物质的方法。 该微生物是通过减少或消除葡萄糖PTS的IIAGlc蛋白与参与非PTS摄取麦芽糖的蛋白质之间的相互作用来控制麦芽糖同化的突变重组菌株。
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8.发明授权Bacteria containing aspartate-semialdehyde dehydrogenase, phosphoenolpyruvate carboxylase, and transhydrogenase to produce L-lysine in escherichia, and methods of using same 有权含有天冬氨酸 - 半醛脱氢酶，磷酸烯醇丙酮酸羧化酶和转氢酶在埃希氏菌中产生L-赖氨酸的细菌及其使用方法公开(公告)号：US07723081B1
公开(公告)日：2010-05-25
申请号：US10149450
申请日：2000-01-21
申请人： Kazuo Nakanishi , Yoshimi Kikuchi , Junichiro Kojima , Tomoko Suzuki , Yasushi Nishimura , Hiroyuki Kojima
发明人： Kazuo Nakanishi , Yoshimi Kikuchi , Junichiro Kojima , Tomoko Suzuki , Yasushi Nishimura , Hiroyuki Kojima
IPC分类号： C12P13/08
摘要： An Escherichia bacterium (1) which harbors dihydrodipicolinate synthase of which feedback inhibition by L-lysine is desensitized and aspartokinase of which feedback inhibition by L-lysine is desensitized, (2) in which intracellular activity of dihydrodipicolinate reductase is enhanced, and (3) in which a diaminopimelate dehydrogenase gene is introduced or intracellular activities of tetrahydrodipicolinate succinylase and succinyl diaminopimelate deacylase are enhanced, wherein intracellular activity of aspartate-semialdehyde dehydrogenase or phosphoenolpyruvate carboxylase is enhanced, is cultured in a suitable medium to produce and accumulate L-lysine in culture, and the L-lysine is collected from the culture.
摘要翻译： 具有L-赖氨酸的反馈抑制脱敏的二氢吡啶并吡啶合酶的大肠杆菌细菌（1），L-赖氨酸的反馈抑制的天冬氨酸脱敏，（2）二氢吡啶二羧酸还原酶的细胞内活性增强，（3） 其中引入二氨基庚二酸脱氢酶基因或增加四氢二吡啶甲酰基琥珀酰基酶和琥珀酰二氨基庚二酸脱酰基酶的细胞内活性，其中天冬氨酸半醛脱氢酶或磷酸烯醇丙酮酸羧化酶的细胞内活性增强，在合适的培养基中培养以在培养物中产生和积累L-赖氨酸 ，并从培养物中收集L-赖氨酸。
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9.发明授权Method for removing organic material in oilfield produced water and a removal device therefor 有权油田生产用水中除去有机物的方法及其除去装置公开(公告)号：US07662295B2
公开(公告)日：2010-02-16
申请号：US11718524
申请日：2005-11-01
申请人： Toshiaki Arato , Hidehiro Iizuka , Akira Mochizuki , Tomoko Suzuki , Akio Honji , Shigesaburo Komatsu , Hisashi Isogami , Hiroshi Sasaki
发明人： Toshiaki Arato , Hidehiro Iizuka , Akira Mochizuki , Tomoko Suzuki , Akio Honji , Shigesaburo Komatsu , Hisashi Isogami , Hiroshi Sasaki
IPC分类号： C02F3/00
CPC分类号： C02F1/281 , B01J20/18 , B01J20/20 , B01J20/28004 , B01J20/3408 , B01J20/3416 , B01J20/3458 , B01J20/3483 , C02F1/4672 , C02F1/488 , C02F2101/32 , C02F2103/365 , C02F2209/08
摘要： A method and an apparatus for removing dissolved organic substances from an oily water obtained as a by-product from an oilfield, characterized in that an oily water obtained as a by-product from an oilfield by separating a crude oil from a crude oil/brine mixture is brought into contact with an adsorbent to adsorptively remove organic substances dissolved in the water containing oil suspended therein and that the adsorbent is regenerated.
摘要翻译： 一种从油田中作为副产物得到的油性水中除去溶解的有机物质的方法和装置，其特征在于，通过从原油/盐水中分离出原油而从油田获得的油状水 使混合物与吸附剂接触以吸附去除溶解在悬浮在其中的含有水的水中的有机物质，并且吸附剂被再生。
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公开(公告)号：US20050014667A1
公开(公告)日：2005-01-20
申请号：US10826319
申请日：2004-04-19
申请人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
发明人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
IPC分类号： C11D7/08 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/50 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/768 , C11D1/00
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/263 , C11D7/28 , C11D7/3218 , C11D7/3263 , C11D7/5013 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76814
摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.
摘要翻译： 本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。 根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。
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