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    Semiconductor device with DRAM cell and method of manufacturing the same
    1.
    发明授权
    Semiconductor device with DRAM cell and method of manufacturing the same 失效
    具有DRAM单元的半导体器件及其制造方法

    公开(公告)号：US07265020B2

    公开(公告)日：2007-09-04

    申请号：US11235210

    申请日：2005-09-27

    申请人： Takeo Furuhata ,  Takahito Nakajima

    发明人： Takeo Furuhata ,  Takahito Nakajima

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/10867 ,  H01L27/1087

    摘要： A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, isotropically forming a trench surface insulating film on an inner surface of the trench, the trench surface insulating film including a deep part functioning as a capacitor insulating film, forming a surface layer side insulating film on the inner surface of the trench so that the surface layer side insulating film is continuously rendered thinner from the surface side of the substrate toward the deep side of the trench, and forming an electrode layer inside the surface layer side insulating film and the trench surface insulating film both formed on the inner surface of the trench.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽的内表面上各向同性地形成沟槽表面绝缘膜，沟槽表面绝缘膜包括用作电容器绝缘膜的深部，形成表面 在沟槽的内表面上形成层侧绝缘膜，使得表面层侧绝缘膜从衬底的表面侧朝向沟槽的深侧连续变薄，并且在表面层侧绝缘膜内部形成电极层 并且沟槽表面绝缘膜都形成在沟槽的内表面上。

    Semiconductor device with DRAM cell and method of manufacturing the same
    2.
    发明申请
    Semiconductor device with DRAM cell and method of manufacturing the same 失效
    具有DRAM单元的半导体器件及其制造方法

    公开(公告)号：US20060068544A1

    公开(公告)日：2006-03-30

    申请号：US11235210

    申请日：2005-09-27

    申请人： Takeo Furuhata ,  Takahito Nakajima

    发明人： Takeo Furuhata ,  Takahito Nakajima

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/10867 ,  H01L27/1087

    摘要： A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, isotropically forming a trench surface insulating film on an inner surface of the trench, the trench surface insulating film including a deep part functioning as a capacitor insulating film, forming a surface layer side insulating film on the inner surface of the trench so that the surface layer side insulating film is continuously rendered thinner from the surface side of the substrate toward the deep side of the trench, and forming an electrode layer inside the surface layer side insulating film and the trench surface insulating film both formed on the inner surface of the trench.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽的内表面上各向同性地形成沟槽表面绝缘膜，沟槽表面绝缘膜包括用作电容器绝缘膜的深部，形成表面 在沟槽的内表面上形成层侧绝缘膜，使得表面层侧绝缘膜从衬底的表面侧朝向沟槽的深侧连续变薄，并且在表面层侧绝缘膜内部形成电极层 并且沟槽表面绝缘膜都形成在沟槽的内表面上。

    SEMICONDUCTOR DEVICE WITH DRAM CELL AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE WITH DRAM CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    具有DRAM单元的半导体器件及其制造方法

    公开(公告)号：US20080014697A1

    公开(公告)日：2008-01-17

    申请号：US11778322

    申请日：2007-07-16

    申请人： Takeo FURUHATA ,  Takahito Nakajima

    发明人： Takeo FURUHATA ,  Takahito Nakajima

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/10867 ,  H01L27/1087

    摘要： A semiconductor device including a semiconductor substrate a trench forming in the substrate, an insulating film forming on an inner surface of the trench so as to be rendered thicker from a substrate surface side thereof toward a trench deep side thereof, and an electrode layer forming inside the insulating film forming inside the trench so as to extend from a trench deep part side toward the surface side of the substrate. The substrate surface side of the insulating film functions as a collar insulating film retaining an insulation performance between the electrode layer and the semiconductor substrate, and the trench deep side of the insulating film functions as a capacitor insulating film composing a capacitor of a DRAM cell.

    摘要翻译： 一种半导体器件，包括在衬底中形成的沟槽的半导体衬底，在沟槽的内表面上形成的绝缘膜，以使其从衬底表面侧朝向沟槽深度侧变厚，以及形成在内部的电极层 所述绝缘膜形成在所述沟槽内部，以便从所述衬底的沟槽深部分侧向所述表面侧延伸。 绝缘膜的基板表面侧用作保持电极层和半导体基板之间的绝缘性能的轴环绝缘膜，并且绝缘膜的沟槽深侧用作构成DRAM单元的电容器的电容器绝缘膜。

    Semiconductor device and method of manufacturing the same
    5.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20060258115A1

    公开(公告)日：2006-11-16

    申请号：US11405539

    申请日：2006-04-18

    申请人： Takahito Nakajima ,  Masahito Shinohe

    发明人： Takahito Nakajima ,  Masahito Shinohe

    IPC分类号： H01L21/76

    CPC分类号： H01L27/1087

    摘要： A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, forming a film containing impurities on an inner surface of a lower part of the trench, forming a silicon nitride film so that an upper sidewall of the trench is covered by the silicon nitride film, and diffusing the impurities outside the trench by heat treatment.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽的下部的内表面上形成含有杂质的膜，形成氮化硅膜，使得沟槽的上侧壁被 氮化硅膜，并通过热处理将杂质扩散到沟槽外。

    MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICES
    7.
    发明申请
    MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICES 失效
    半导体器件的制造方法

    公开(公告)号：US20090215241A1

    公开(公告)日：2009-08-27

    申请号：US12392584

    申请日：2009-02-25

    申请人： Katsuhiro SATO ,  Takahito Nakajima

    发明人： Katsuhiro SATO ,  Takahito Nakajima

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224

    摘要： A polysilazane perhydride solution, prepared by dispesing polysilazane perhydride in a solvent containing carbon, is applied on a semiconductor substrate (1), thereby forming a coated film (6), which is heated, volatilizing solvent therein, thereby forming a polysilazane film (7), which is chemical-treated, so the polysilazane film (7) is changed to a silicon dioxide film (8).

    摘要翻译： 将通过在含碳溶剂中分散聚硅氮烷酸酐制备的聚硅氮烷过硼酸溶液施加到半导体衬底（1）上，从而形成涂覆膜（6），其中加热溶剂，从而形成聚硅氮烷膜（7 ），其被化学处理，因此将聚硅氮烷膜（7）改变为二氧化硅膜（8）。

    Method for cleaning semiconductor wafers
    9.
    发明授权
    Method for cleaning semiconductor wafers 失效
    清洗半导体晶圆的方法

    公开(公告)号：US5810940A

    公开(公告)日：1998-09-22

    申请号：US710400

    申请日：1996-09-17

    申请人： Yuji Fukazawa ,  Takahito Nakajima ,  Kazuhiko Takase

    发明人： Yuji Fukazawa ,  Takahito Nakajima ,  Kazuhiko Takase

    IPC分类号： H01L21/304 ,  H01L21/306 ,  C03C23/00

    CPC分类号： H01L21/02052 ,  Y10S134/902

    摘要： For cleaning a semiconductor wafer without exposing it to the atmosphere, after the semiconductor wafer is placed in a cleaning vessel which is filled with deionized water through a first control valve, a first cleaning fluid is supplied to the cleaning vessel through a second control valve so that the deionized water overflows. A second cleaning fluid is then supplied to the vessel through a third control valve such that the first cleaning fluid overflows to produce a mixed fluid containing the first cleaning fluid, thereby cleaning the semiconductor wafer therein.

    摘要翻译： 为了清洁半导体晶片而不将其暴露于大气中，在将半导体晶片放置在通过第一控制阀填充有去离子水的清洁容器中之后，第一清洁流体通过第二控制阀供应到清洁容器，因此 去离子水溢出。 然后通过第三控制阀将第二清洁流体供应到容器，使得第一清洗流体溢出以产生包含第一清洗流体的混合流体，从而清洁其中的半导体晶片。