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251 条记录 (耗时 0.036 秒)

    Lead-free copper alloy for casting with excellent mechanical properties
    6.
    发明授权
    Lead-free copper alloy for casting with excellent mechanical properties 有权
    无铅铜合金，具有优良的机械性能

    公开(公告)号：US08470101B2

    公开(公告)日：2013-06-25

    申请号：US13319388

    申请日：2010-05-17

    申请人： Takeshi Kobayashi ,  Toru Maruyama ,  Ryozo Matsubayashi ,  Hiroyuki Abe ,  Masakazu Teramura

    发明人： Takeshi Kobayashi ,  Toru Maruyama ,  Ryozo Matsubayashi ,  Hiroyuki Abe ,  Masakazu Teramura

    IPC分类号： C22C9/04 ,  C22C9/10

    CPC分类号： C22C9/02 ,  C22C1/10 ,  C22C9/04 ,  C22C32/0089

    摘要： Disclosed is a lead-free copper alloy for casting which contains 0.1-0.7% of S, 8% or less (excluding 0%) of Sn, and 6% or less (excluding 0%) of Zn, and in which a sulfide is dispersed and the average spheroidization ratio of the sulfide is 0.7 or greater. Due to this constitution, said lead-free copper alloy for casting has excellent mechanical properties such as strength, high pressure resistance and good machinability and, therefore, is useful as a starting material for faucet metal fittings, water faucet and so on, even though the alloy contains no lead which causes deterioration of water.

    摘要翻译： 公开了一种用于铸造的无铅铜合金，其含有Sn的0.1〜0.7％，Sn的8％以下（不含0％）和6％以下（不含0％）的Zn，其中硫化物 分散，硫化物的平均球化率为0.7以上。 由于这种结构，所述无铅铸造用铜合金具有优异的机械性能，例如强度，耐高压性和良好的机械加工性，因此作为水龙头金属配件，水龙头等的起始材料是有用的，即使 该合金不含有引起水分劣化的铅。

    Mechanical pencil
    7.
    发明授权
    Mechanical pencil 失效
    自动铅笔

    公开(公告)号：US08337107B2

    公开(公告)日：2012-12-25

    申请号：US12866943

    申请日：2008-12-18

    申请人： Norio Ohsawa ,  Takeo Fukumoto ,  Yoshitoshi Osano ,  Takeshi Kobayashi ,  Hirotake Izawa ,  Kyo Nakayama

    发明人： Norio Ohsawa ,  Takeo Fukumoto ,  Yoshitoshi Osano ,  Takeshi Kobayashi ,  Hirotake Izawa ,  Kyo Nakayama

    IPC分类号： B43K21/22

    CPC分类号： B43K21/003 ,  B43K21/16 ,  B43K21/22

    摘要： A writing lead (10) is grasped and released by reciprocation of a chuck (3) provided in a body cylinder (1) so as to inch the writing lead forward and a rotational drive mechanism is provided for rotationally driving a rotor (5) in one direction in conjunction with retreat operation by the writing pressure applied to the writing lead and forward movement by releasing the writing pressure. A pipe support member (8) for supporting a pipe end (7) is accommodated in a base (1A) which constitutes a front end portion of the body cylinder, and a retreat drive mechanism is provided for gradually retreating the pipe support member into the body cylinder in conjunction with rotational drive operation of the rotor. With the above-mentioned structure, a pipe-slide type mechanical pencil can maintain an amount of projection of the writing lead from the pipe end within a certain range.

    摘要翻译： 一个写入引线（10）通过设置在主体滚筒（1）中的卡盘（3）的往复运动而被夹紧和释放，以便使书写引线向前平齐，并且提供一个旋转驱动机构用于旋转地驱动转子 通过施加到书写笔的书写压力和撤销操作的一个方向，通过释放书写压力来向前移动。 用于支撑管端（7）的管支撑构件（8）容纳在构成主体筒体的前端部的基部（1A）中，并且设置有后退驱动机构，用于逐渐将管支撑构件缩回到 结合转子的旋转驱动操作。 利用上述结构，管滑动型自动铅笔可以将写入线从管端的突出量保持在一定范围内。

    Method for producing dihydroxybenzene derivative
    8.
    发明授权
    Method for producing dihydroxybenzene derivative 有权
    二羟基苯衍生物的制备方法

    公开(公告)号：US08222446B2

    公开(公告)日：2012-07-17

    申请号：US12918852

    申请日：2008-03-19

    申请人： Akinori Nagatomo ,  Kouki Oogaki ,  Takeshi Kobayashi

    发明人： Akinori Nagatomo ,  Kouki Oogaki ,  Takeshi Kobayashi

    IPC分类号： C07C69/675

    CPC分类号： C07C67/03 ,  C07C67/14 ,  C07C69/44 ,  C07C69/50

    摘要： A method of producing a compound represented by the following general formula (3): [wherein R is a bivalent aliphatic group having a carbon number of 1-16 or a bivalent aromatic group], which comprises a step (i) of reacting a compound represented by the following general formula (1): with a carboxylic acid halide represented by the following general formula (2): [wherein R is a bivalent aliphatic group having a carbon number of 1-16 or a bivalent aromatic group and X is a halogen atom] in the presence of a basic compound to form an ester, and a step (ii) of conducting a heat treatment after the step (i) to decompose an oligomer in the ester.

    摘要翻译： 一种制备由以下通式（3）表示的化合物的方法：[其中R是碳数为1-16的二价脂族基或二价芳族基]，其包括步骤（i）使化合物 由以下通式（1）表示：用下述通式（2）表示的羧酰卤：[其中R是碳数为1-16的二价脂族基或二价芳基，X为 卤素原子]在碱性化合物存在下反应形成酯，和步骤（ii）在步骤（i）之后进行热处理以分解酯中的低聚物。

    Vertical heat treatment boat and heat treatment method for semiconductor wafer
    10.
    发明授权
    Vertical heat treatment boat and heat treatment method for semiconductor wafer 有权
    半导体晶圆立式热处理船和热处理方法

    公开(公告)号：US08003918B2

    公开(公告)日：2011-08-23

    申请号：US12449629

    申请日：2008-02-28

    申请人： Takeshi Kobayashi

    发明人： Takeshi Kobayashi

    IPC分类号： F27D11/00 ,  A21B2/00

    CPC分类号： H01L21/67309

    摘要： The present invention provides a vertical heat treatment boat that has at least four or more support portions per processing target substrate to be supported, the support portions horizontally supporting the processing target substrate, support auxiliary members on which the processing target substrate is mounted being detachably attached to the four or more support portions, respectively, wherein flatness obtained from all surfaces of the respective support auxiliary members on which the processing target substrate is mounted is adjusted by adjusting thicknesses of the support auxiliary members or interposing spacers between the support portions and the support auxiliary members in accordance with respective shapes of the four or more support portions. As a result, it is provided the vertical heat treatment boat and a heat treatment method for a semiconductor wafer that can readily improve flatness in support of the processing target substrate and effectively prevent occurrence of slip dislocation when performing a heat treatment to the processing target substrate such as a semiconductor wafer by using a vertical heat treatment furnace.

    摘要翻译： 本发明提供一种垂直热处理舟，每个加工对象基板的支撑部至少具有四个以上的支撑部，支撑部水平地支撑处理对象基板，支撑辅助部件，其上安装有处理对象基板，可拆卸地安装 分别与四个或更多个支撑部分相对应，其中通过调节在支撑部分和支撑件之间的支撑辅助构件或插入间隔件的厚度来调节从其上安装有处理目标基板的各个支撑辅助构件的所有表面获得的平坦度 辅助构件根据四个或更多个支撑部分的相应形状。 结果，提供了一种用于半导体晶片的垂直热处理舟和热处理方法，其能够容易地提高对处理对象基板的支撑的平坦性，并且能够有效地防止在对处理对象基板进行热处理时发生滑移位错 例如通过使用立式热处理炉的半导体晶片。