公开(公告)号：US20150270172A1

公开(公告)日：2015-09-24

申请号：US14733619

申请日：2015-06-08

申请人： International Business Machines Corporation

发明人： Sampath D. Purushotaman ,  Roy R. Yu

IPC分类号： H01L21/768 ,  H01L29/06 ,  H01L23/00 ,  H01L21/304 ,  H01L25/00 ,  H01L21/306 ,  H01L27/06 ,  H01L21/762 ,  H01L25/065 ,  H01L21/84 ,  H01L23/544

CPC分类号： H01L21/76897 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/5226 ,  H01L23/544 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/89 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/0649 ,  H01L2221/68372 ,  H01L2223/54426 ,  H01L2224/03 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/11002 ,  H01L2224/1148 ,  H01L2224/11616 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/17181 ,  H01L2224/8013 ,  H01L2224/81005 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/8109 ,  H01L2224/81093 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81209 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A process and resultant article of manufacture made by such process comprises forming through vias needed to connect a bottom device layer in a bottom silicon wafer to the one in the top device layer in a top silicon wafer comprising a silicon-on-insulator (SOI) wafer. Through vias are disposed in such a way that they extend from the middle of the line (MOL) interconnect of the top wafer to the buried oxide (BOX) layer of the SOI wafer with appropriate insulation provided to isolate them from the SOI device layer.

摘要翻译： 通过这种方法制造的工艺和最终的制品包括将包含硅绝缘体（SOI）的顶部硅晶片中的将底部硅晶片中的底部器件层连接到顶部器件层中的底部器件层所需的通孔形成， 晶圆。 通孔以这样的方式设置，使得它们从顶部晶片的线（MOL）互连的中间延伸到SOI晶片的掩埋氧化物（BOX）层，其中提供了适当的绝缘以将它们与SOI器件层隔离开。

公开(公告)号：US20120118939A1

公开(公告)日：2012-05-17

申请号：US13295581

申请日：2011-11-14

申请人： Keiyo KUSANAGI ,  Koichi HATAKEYAMA ,  Mitsuhisa WATANABE ,  Yusuke NAKANOYA ,  Hidenori MATSUSHITA ,  Toru MEURA ,  Kenzou MAEJIMA ,  Hiroki NIKAIDO ,  Mina NIKAIDO

发明人： Keiyo KUSANAGI ,  Koichi HATAKEYAMA ,  Mitsuhisa WATANABE ,  Yusuke NAKANOYA ,  Hidenori MATSUSHITA ,  Toru MEURA ,  Kenzou MAEJIMA ,  Hiroki NIKAIDO ,  Mina NIKAIDO

IPC分类号： B23K1/008 ,  B23K31/02

CPC分类号： B23K1/0016 ,  H01L24/13 ,  H01L24/29 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81209 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83862 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/15787 ,  H01L2924/181 ,  H05K3/3436 ,  H05K3/3489 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2203/068 ,  H05K2203/1189 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2924/00

摘要： The process for manufacturing the semiconductor device and the apparatus, which achieve stable production of semiconductor devices with improved connection reliability, is presented. First terminals of circuit boards 1 are arranged to face the corresponding bumps of semiconductor chips 2, respectively, and the resin layer 3 is disposed between the respective first terminals and the respective bumps to form laminates, and the laminates are simultaneously compressed from a direction of lamination, while heating a plurality of laminates. In such case, the diaphragm 54 disposed in a heating furnace 51 is abutted against a plurality of laminates or a member 531 to elastically deform the members while a plurality of laminates is heated in the heating furnace 51, so that laminates are simultaneously compressed from a direction of lamination, while heating thereof in a vacuum.

摘要翻译： 本发明提供了制造半导体器件的方法以及实现稳定生产具有改进的连接可靠性的半导体器件的装置。 电路板1的第一端子被分别布置成与半导体芯片2的相应凸块相对，并且树脂层3设置在相应的第一端子和相应的凸块之间以形成层压体，并且层叠体同时从 同时加热多个层压板。 在这种情况下，设置在加热炉51中的隔膜54抵靠多个层压体或构件531，以在加热炉51中加热多个层压体的同时使构件弹性变形，使得层压体同时从 层叠方向，同时在真空中加热。

公开(公告)号：US20010015010A1

公开(公告)日：2001-08-23

申请号：US09777062

申请日：2001-02-05

申请人： Matsushita Electric Industrial Co., Ltd.

发明人： Masahide Tsukamoto

IPC分类号： H05K003/36 ,  B23P019/00 ,  H05K003/02

CPC分类号： H01L24/75 ,  H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75315 ,  H01L2224/7598 ,  H01L2224/81209 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/284 ,  H05K3/303 ,  H05K2203/0278 ,  H05K2203/085 ,  Y02P70/613 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/53174 ,  Y10T29/53178 ,  Y10T29/53183 ,  Y10T29/53191 ,  H01L2924/00 ,  H01L2224/05599

摘要： Bump components mounted on a circuit board on a supporting substrate is covered with a flexible separation wall. A pressure difference is provided between the inner and outer sides of the separation wall and thus the bump components are pressed against the circuit board. When heating is carried out in this state, the bump components and the circuit board are connected with a conductive adhesive or solder. During the heating, the circuit board is not deformed. Therefore, a bump-component mounted body can be manufactured with high yield.

摘要翻译： 安装在支撑基板上的电路板上的凸起部件被柔性分隔壁覆盖。 在分隔壁的内侧和外侧之间设置压力差，因此凸块部件被压靠在电路板上。 当在这种状态下进行加热时，凸起部件和电路板与导电粘合剂或焊料连接。 在加热过程中，电路板不会变形。 因此，可以以高产率制造凸块部件安装体。

公开(公告)号：US09613928B2

公开(公告)日：2017-04-04

申请号：US14904670

申请日：2014-07-16

申请人： Agency for Science, Technology and Research

发明人： Sunil Wickramanayaka

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/00 ,  H01L21/56 ,  H01L25/00

CPC分类号： H01L24/83 ,  H01L21/563 ,  H01L24/743 ,  H01L24/75 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/13009 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/27515 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/7501 ,  H01L2224/75102 ,  H01L2224/7511 ,  H01L2224/75184 ,  H01L2224/75264 ,  H01L2224/753 ,  H01L2224/7598 ,  H01L2224/81002 ,  H01L2224/81093 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/81209 ,  H01L2224/81903 ,  H01L2224/81907 ,  H01L2224/83002 ,  H01L2224/8309 ,  H01L2224/83093 ,  H01L2224/83097 ,  H01L2224/8312 ,  H01L2224/83193 ,  H01L2224/83209 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/83911 ,  H01L2224/9205 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00014

摘要： An apparatus and a method for chip-to-wafer integration is provided. The apparatus includes a coating module, a bonding module and a cleaning module. The method includes the steps of placing at least one chip on a wafer to form an integrated product, forming a film on the integrated product, such that the integrated product is substantially fluid-tight, and exerting a predetermined positive pressure on the film during permanent bonding of the at least one chip to the wafer. The method further includes the step of removing the film from the integrated product after permanent bonding of the at least one chip to the wafer.

公开(公告)号：US20150118784A1

公开(公告)日：2015-04-30

申请号：US14093728

申请日：2013-12-02

申请人： Raytheon Company

发明人： Kenneth Allen Gerber ,  Jonathan Getty ,  Aaron M. Ramirez ,  Scott S. Miller

IPC分类号： H01L31/0203 ,  H01L27/144 ,  H01L23/00

CPC分类号： H01L31/0203 ,  H01L24/26 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L27/144 ,  H01L27/14634 ,  H01L27/1465 ,  H01L27/1469 ,  H01L2224/16145 ,  H01L2224/75101 ,  H01L2224/81193 ,  H01L2224/81209 ,  H01L2224/8182 ,  H01L2924/351

摘要： A method for bonding a first semiconductor body having a plurality of electromagnetic radiation detectors to a second semiconductor body having read out integrated circuits for the detectors. The method includes: aligning electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits; tacking the aligned electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits to form an intermediate stage structure; packaging the intermediate stage structure into a vacuum sealed electrostatic shielding container having flexible walls; inserting the package with the intermediate stage structure therein into an isostatic pressure chamber; and applying the isostatic pressure to the intermediate stage structure through walls of the container. The container includes a stand-off to space walls of the container from edges of the first semiconductor body.

摘要翻译： 一种用于将具有多个电磁辐射检测器的第一半导体本体结合到具有用于检测器的已读出集成电路的第二半导体本体的方法。 该方法包括：将多个电磁辐射检测器的电触点对准读出的集成电路的电触点; 通过读出的集成电路的电接触来对多个电磁辐射检测器的对齐的电触点进行定位，以形成中间级结构; 将中间阶段结构包装成具有柔性壁的真空密封静电屏蔽容器; 将其中间级结构的包装插入等静压压力室中; 以及通过容器的壁将等静压施加到中间阶段结构。 容器包括从第一半导体本体的边缘到容器的空间壁的间隔壁。

公开(公告)号：US20140013595A1

公开(公告)日：2014-01-16

申请号：US13939635

申请日：2013-07-11

申请人： Infineon Technologies AG

发明人： Tao Hong

IPC分类号： H01L23/00

CPC分类号： H01L24/89 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/27418 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/7511 ,  H01L2224/75251 ,  H01L2224/75315 ,  H01L2224/7532 ,  H01L2224/81005 ,  H01L2224/81209 ,  H01L2224/83054 ,  H01L2224/83055 ,  H01L2224/83093 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83222 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/8381 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2924/1203 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  Y10T29/49117 ,  Y10T156/10 ,  H01L2924/00

摘要： A pressure chamber has first and second housing elements and first and second chamber regions. The pressure chamber is loaded with a first part, a second part, a connecting means and a sealing means. The connecting means is arranged in the first chamber region. The loaded pressure chamber is placed into a receiving region. The first housing element is pressed against the second housing element so that the pressure chamber is clamped with the aid of a working cylinder between the working cylinder and a holding frame. In the clamped state, a second gas pressure, which is higher than a first gas pressure in the first chamber region, is generated in the second chamber region. In this way, the first part, the second part and the connecting means are pressed against one another within the pressure chamber.

摘要翻译： 压力室具有第一和第二壳体元件以及第一和第二腔室区域。 压力室装有第一部分，第二部分，连接装置和密封装置。 连接装置设置在第一室区域中。 负载的压力室被放置在接收区域中。 第一壳体元件被压靠在第二壳体元件上，使得压力室借助于在工作缸和保持框架之间的工作缸被夹紧。 在夹紧状态下，在第二室区域中产生高于第一室区域中的第一气体压力的第二气体压力。 以这种方式，第一部分，第二部分和连接装置在压力室内彼此压靠。

公开(公告)号：US08563396B2

公开(公告)日：2013-10-22

申请号：US13016994

申请日：2011-01-29

申请人： Sampath Purushothaman ,  Roy R. Yu

发明人： Sampath Purushothaman ,  Roy R. Yu

IPC分类号： H01L21/60

CPC分类号： H01L21/76897 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/5226 ,  H01L23/544 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/89 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/0649 ,  H01L2221/68372 ,  H01L2223/54426 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/11002 ,  H01L2224/1148 ,  H01L2224/11616 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/17181 ,  H01L2224/8013 ,  H01L2224/81005 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/8109 ,  H01L2224/81093 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81209 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A process and resultant article of manufacture made by such process comprises forming through vias needed to connect a bottom device layer in a bottom silicon wafer to the one in the top device layer in a top silicon wafer comprising a silicon-on-insulator (SOI) wafer. Through vias are disposed in such a way that they extend from the middle of the line (MOL) interconnect of the top wafer to the buried oxide (BOX) layer of the SOI wafer with appropriate insulation provided to isolate them from the SOI device layer.

摘要翻译： 通过这种方法制造的工艺和最终的制品包括将包含硅绝缘体（SOI）的顶部硅晶片中的将底部硅晶片中的底部器件层连接到顶部器件层中的底部器件层所需的通孔形成， 晶圆。 通孔以这样的方式设置，使得它们从顶部晶片的线（MOL）互连的中间延伸到SOI晶片的掩埋氧化物（BOX）层，其中提供了适当的绝缘以将它们与SOI器件层隔离开。

公开(公告)号：US20120199988A1

公开(公告)日：2012-08-09

申请号：US13501005

申请日：2010-10-13

申请人： Toru Meura ,  Hiroki Nikaido ,  Kenzou Maejima ,  Yoji Ishimura ,  Kenji Yoshida

发明人： Toru Meura ,  Hiroki Nikaido ,  Kenzou Maejima ,  Yoji Ishimura ,  Kenji Yoshida

IPC分类号： H01L23/52 ,  H01L21/50

CPC分类号： H01L24/81 ,  C08L63/00 ,  C09D163/00 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/13023 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29191 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/7511 ,  H01L2224/75283 ,  H01L2224/7531 ,  H01L2224/7598 ,  H01L2224/81193 ,  H01L2224/81209 ,  H01L2224/8121 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/83209 ,  H01L2224/83801 ,  H01L2224/83855 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05552

摘要： Disclosed is a method of manufacturing an electronic device, that includes obtaining a stack of the first electronic component and the second electronic component, while placing a resin layer which contains a flux-active compound and a thermosetting resin, between the first terminals and the second terminals; bonding the first terminals and the second terminals with solder, by heating the stack at a temperature not lower than the melting point of solder layers on the first terminals, while pressurizing the stack using a fluid; and curing the resin layer. The duration from the point of time immediately after the start of heating of the stack, up to the point of time when the temperature of the stack reaches the melting point of the solder layers, is set to 5 seconds or longer, and 15 minutes or shorter.

摘要翻译： 公开了一种制造电子器件的方法，包括：在第一端子和第二端子之间放置包含助焊剂活性化合物和热固性树脂的树脂层，获得第一电子部件和第二电子部件的堆叠 终端; 通过在不低于第一端子处的焊料层的熔点的温度下加热堆叠，同时使用流体对堆叠进行加压，将焊料接合在第一端子和第二端子上; 并固化树脂层。 从堆叠的开始加热之后的时间点直到堆叠的温度达到焊料层的熔点的时间长度设定为5秒以上15分钟或 较短

公开(公告)号：US20120061820A1

公开(公告)日：2012-03-15

申请号：US13319531

申请日：2010-07-09

申请人： Kenzou Maejima ,  Satoru Katsurayama ,  Toru Meura

发明人： Kenzou Maejima ,  Satoru Katsurayama ,  Toru Meura

IPC分类号： H01L23/52 ,  B23K1/20 ,  B23K31/02

CPC分类号： C09D163/00 ,  H01L21/563 ,  H01L24/13 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81091 ,  H01L2224/81093 ,  H01L2224/81097 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81204 ,  H01L2224/81209 ,  H01L2224/81211 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8349 ,  H01L2224/83862 ,  H01L2224/92125 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/3512

摘要： Provided is a method for manufacturing an electronic component by using a solder joining method for bonding a first electronic component having a metal electrode with a second electronic component having a solder electrode, the method comprising; (i) forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of said first electronic component and said second electronic component; (ii) positioning said metal electrode of said first electronic component and said solder electrode of said second electronic component to face each other, heating said positioned electrodes and applying pressure, and thereby bringing said metal electrode and said solder electrode into contact; (iii) heating electronic components while applying pressure thereby fusion bonding said solder to said metal electrode; and (iv) heating said resin layer.

摘要翻译： 本发明提供一种电子部件的制造方法，其特征在于，使用焊料接合方法，该焊接方法用于将具有金属电极的第一电子部件与具有焊料电极的第二电子部件接合。 （i）在所述第一电子部件和所述第二电子部件的至少一个焊接面上形成含有热硬化性树脂的树脂层; （ii）将所述第一电子部件的所述金属电极和所述第二电子部件的所述焊料电极相对配置，加热所述定位电极并施加压力，从而使所述金属电极和所述焊料电极接触; （iii）在施加压力的同时加热电子部件，从而将所述焊料熔合到所述金属电极上; 和（iv）加热所述树脂层。

公开(公告)号：US20070284409A1

公开(公告)日：2007-12-13

申请号：US11844293

申请日：2007-08-23

申请人： Mauro Kobrinsky ,  Shriram Ramanathan ,  Scott List

发明人： Mauro Kobrinsky ,  Shriram Ramanathan ,  Scott List

IPC分类号： H01L21/67

CPC分类号： H01L21/67092 ,  H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/17 ,  H01L24/75 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/05186 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/0603 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/13022 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2224/17 ,  H01L2224/75 ,  H01L2224/7511 ,  H01L2224/75252 ,  H01L2224/75314 ,  H01L2224/75315 ,  H01L2224/75317 ,  H01L2224/81011 ,  H01L2224/81012 ,  H01L2224/81013 ,  H01L2224/81121 ,  H01L2224/81209 ,  H01L2224/81801 ,  H01L2224/81895 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/3511

摘要： The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.

摘要翻译： 本发明公开了一种方法，包括：提供两个晶片; 在两个晶片上形成凸起的接触; 对准两个晶片; 汇集联络人; 局部偏转两片晶片; 并且接合凸起的触点。 本发明还公开了一种接合晶片结构，其包括：第一晶片，所述第一晶片被局部偏转，所述第一晶片包括第一凸起接触; 和第二晶片，所述第二晶片局部偏转，所述第二晶片包括第二凸起接触件，其中所述第二凸起接触件接合到所述第一凸起接触件。