公开(公告)号：US06234769B1

公开(公告)日：2001-05-22

申请号：US09111762

申请日：1998-07-08

申请人： Takeshi Sakai ,  Masafumi Nakashima ,  Takeshi Wakisaka ,  Hiroshi Kishita ,  Mikio Matsuda ,  Hiroshi Ogawa ,  Hiroyasu Kato

发明人： Takeshi Sakai ,  Masafumi Nakashima ,  Takeshi Wakisaka ,  Hiroshi Kishita ,  Mikio Matsuda ,  Hiroshi Ogawa ,  Hiroyasu Kato

IPC分类号： F04B1700

CPC分类号： F04C29/0085 ,  F04B27/0895 ,  F04B35/002 ,  F04B35/04 ,  F04C18/0207 ,  F04C2240/45

摘要： In a hybrid type compressor, a one-way clutch is provided between a magnet rotor and a rotor shaft for allowing rotational driving force generated by an electric motor unit to be transmitted only from a rotor to a shaft. Thus, the rotational driving force generated by a vehicle engine is not transmitted from the rotor shaft to the magnet rotor. That is, an inertia moment of a rotational system with respect to a vehicle engine is made small, thereby reducing the impact vibration when the clutch mechanism engages.

摘要翻译： 在混合式压缩机中，在磁转子和转子轴之间设有单向离合器，用于允许由电动机单元产生的旋转驱动力仅从转子传递到轴。 因此，由车辆发动机产生的旋转驱动力不从转子轴传递到磁体转子。 也就是说，旋转系统相对于车辆发动机的惯性矩变小，从而减小了当离合器机构接合时的冲击振动。

公开(公告)号：US6106253A

公开(公告)日：2000-08-22

申请号：US089642

申请日：1998-06-03

申请人： Takeshi Sakai ,  Takeshi Wakisaka

发明人： Takeshi Sakai ,  Takeshi Wakisaka

IPC分类号： F04C29/04 ,  F04C18/02 ,  F04C29/00 ,  F01C1/02

CPC分类号： F04C29/0007 ,  F04C18/0215

摘要： In a scroll type compressor to be applied to a gas-injection type refrigerating cycle, an injection port is formed in a pressure receiving surface of a front housing, and a communication port is formed in a pressure transmitting surface of a movable scroll member. A spacer is provided between the pressure receiving surface and the pressure transmitting surface, and is fixed to the pressure receiving surface. The spacer has a penetration hole at a position corresponding to the injection port formed in the pressure receiving surface.

摘要翻译： 在应用于气体注入式制冷循环的涡旋式压缩机中，在前壳体的受压面形成有喷射口，在可动涡旋部件的压力传递面上形成有连通口。 在压力接收表面和压力传递表面之间设置间隔件，并且被固定到压力接收表面。 间隔件在对应于形成在压力接收表面中的注入口的位置处具有穿透孔。

公开(公告)号：US20140015541A1

公开(公告)日：2014-01-16

申请号：US14008302

申请日：2012-03-14

申请人： Takeshi Sakai ,  Masahito Mure

发明人： Takeshi Sakai ,  Masahito Mure

IPC分类号： G01R31/00

CPC分类号： G01R31/001 ,  G01R29/0871 ,  G01R29/0885 ,  G01R29/10

摘要： In the electric field measuring device, a DC bias circuit applying a DC bias voltage to an optical intensity modulator is disposed in an area, and a DC bias control portion controlling a DC bias voltage is disposed outside the area. An electrical signal of a DC bias voltage which is output from the DC bias control portion is converted into an optical signal by an electrical-optical converter (E/O) so as to be introduced into the area via an optical fiber, and the optical signal is converted into an electrical signal by an optical-electrical converter (O/E) disposed in the area such that the electrical signal is input to the DC bias circuit.

摘要翻译： 在电场测量装置中，在一个区域中设置将DC偏置电压施加到光强度调制器的DC偏置电路，并且将控制DC偏置电压的DC偏置控制部分设置在该区域的外部。 从DC偏置控制部输出的直流偏置电压的电信号通过电光转换器（E / O）被转换为光信号，以经由光纤被引入到该区域中，并且光学 信号通过设置在该区域中的光电转换器（O / E）转换成电信号，使得电信号被输入到DC偏置电路。

公开(公告)号：US20120080683A1

公开(公告)日：2012-04-05

申请号：US13242283

申请日：2011-09-23

申请人： Takeshi NODA ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

发明人： Takeshi NODA ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

IPC分类号： H01L27/15 ,  H01L29/786

CPC分类号： H01L29/66765 ,  G02F1/136209 ,  H01L29/78633

摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

摘要翻译： 提供薄膜晶体管，显示装置和液晶显示装置。 薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为 与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠 照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

公开(公告)号：US08111263B2

公开(公告)日：2012-02-07

申请号：US12405966

申请日：2009-03-17

申请人： Katsunobu Kimura ,  Takaaki Matono ,  Haruki Takata ,  Takeshi Sakai ,  Wataru Kato

发明人： Katsunobu Kimura ,  Takaaki Matono ,  Haruki Takata ,  Takeshi Sakai ,  Wataru Kato

IPC分类号： G09G5/02

CPC分类号： H04N9/73 ,  G09G5/02 ,  G09G2320/0666

摘要： A video display device that allows the color temperature of the signals in white color attributes having high luminance and low chroma saturation to be corrected with high precision is provided with a color temperature correction method so as to visually obtain a desirable white color on display. In some embodiments, the signal processing circuit can include an A/D converter to convert video signals into digitalized signals, a matrix circuit to convert the digitalized signals into luminance signals and at least two color difference signals, a hue conversion circuit to obtain hue signals from the color difference signals, a hue correction circuit to correct hue signals, a chroma saturation conversion circuit to obtain chroma saturation signals from color difference signals, a chroma saturation correction circuit to correct chroma saturation signals and a color temperature correction circuit to perform the color temperature correction on the respective hue and chroma saturation signals.

摘要翻译： 使用色温校正方法，可以在显示器上目视获得所期望的白色，使具有高亮度和低色度饱和度的白色属性信号的色温被高精度地校正的视频显示装置。 在一些实施例中，信号处理电路可以包括将视频信号转换为数字化信号的A / D转换器，用于将数字化信号转换为亮度信号和至少两个色差信号的矩阵电路，色调转换电路以获得色调信号 从色差信号中校正色调信号的色调校正电路，色度饱和度转换电路，从色差信号获得色度饱和度信号，色度饱和度校正电路校正色饱和度信号，色温校正电路执行色彩 对各个色调和色度饱和度信号进行温度校正。

公开(公告)号：US20110227559A1

公开(公告)日：2011-09-22

申请号：US12998762

申请日：2009-11-27

申请人： Norikazu Miyazaki ,  Takeshi Sakai

发明人： Norikazu Miyazaki ,  Takeshi Sakai

IPC分类号： G01R31/00

CPC分类号： G01R29/0885 ,  G01R29/0871 ,  G01R33/032

摘要： The electric field measuring device measures an electric field intensity of an electromagnetic wave generated from equipment under test 8 in an area for detecting an electromagnetic wave. An antenna 1 and an optical intensity modulator having a Mach-Zehnder type optical waveguide are inside the area and an output signal of the antenna is supplied to a modulation electrode of the optical intensity modulator. A light source unit, a light receiving unit, and a DC bias control unit controlling a DC bias voltage supplied to the optical intensity modulator are outside the area. An optical wave is guided to the optical intensity modulator from the light source unit, and is guided to the light receiving unit from the optical intensity modulator via an optical fiber 4. The DC bias voltage is supplied to the optical intensity modulator from the DC bias control unit via a power supply line 4.

摘要翻译： 电场测量装置测量用于检测电磁波的区域中由被测设备8产生的电磁波的电场强度。 天线1和具有马赫 - 曾德尔型光波导的光强度调制器在该区域内，天线的输出信号被提供给光强度调制器的调制电极。 控制提供给光强度调制器的DC偏置电压的光源单元，光接收单元和DC偏置控制单元在该区域之外。 光波从光源单元被引导到光强度调制器，并通过光纤4从光强度调制器被引导到光接收单元.DC偏压由DC偏压提供给光强度调制器 控制单元经由电源线4。

公开(公告)号：US07795524B2

公开(公告)日：2010-09-14

申请号：US12057905

申请日：2008-03-28

申请人： Miki Arai ,  Satoshi Usa ,  Takeshi Sakai

发明人： Miki Arai ,  Satoshi Usa ,  Takeshi Sakai

IPC分类号： G10H7/00

CPC分类号： G09B15/002 ,  G10H1/22 ,  G10H1/40 ,  G10H2210/076 ,  G10H2210/091 ,  G10H2220/221

摘要： A musical performance processing apparatus that provides better assistance for student's practice. The apparatus includes a main unit in which music data including performance information of right- and left hand parts is stored, and a performance terminal having a keyboard divided into two key ranges by a split point. Each key range is set as a tapping or normal performance key range. The main unit generates a musical tone when input with performance information generated by depression of a key in the normal performance key range, and automatically reproduces performance information of designated part of music data for the number of beats corresponding to key depression, when input with performance information generated by depression of a key in the tapping performance key range. Sounding is stopped, if there is a deviation between a tempo of teacher's tapping performance and timing of student's performance.

摘要翻译： 一种演奏处理装置，为学生的实践提供更好的帮助。 该装置包括主单元，其中存储包括右手部件的性能信息的音乐数据，以及具有通过分割点分成两个键范围的键盘的演奏终端。 每个键范围都设置为敲击或正常的演奏键范围。 主要单元在通过在正常演奏键区域中按下键而产生的演奏信息进行输入时产生乐音，并且当以演奏输入时，自动再现与键按压对应的节拍次数的指定音乐数据部分的演奏信息 通过在按键性能关键范围内按下键来产生的信息。 如果教师的敲击表演速度与学生表演的时间有偏差，则声音停止。

公开(公告)号：US20090224247A1

公开(公告)日：2009-09-10

申请号：US12379874

申请日：2009-03-03

申请人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

发明人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

IPC分类号： H01L33/00

CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251

摘要： In a bottom-gate-type thin film transistor used in a liquid crystal display device in which a poly-Si layer and an a-Si layer are stacked, a quantity of an ON current which flows in the thin film transistor can be increased. A poly-Si layer and an a-Si layer are stacked on a gate electrode as an active layer by way of a gate insulation film therebetween in order of the poly-Si layer and the a-Si layer. An n+Si layer and a source/drain layer are formed on the a-Si layer thus forming a thin film transistor. A forward current which flows in the thin film transistor mainly flows in the poly-Si layer. To decrease contact resistance against the forward current between the poly-Si layer and the n+Si layer, an edge portion of the a-Si layer and an edge portion of the poly-Si layer assume a concavo-convex shape thus particularly increasing a contact area between the poly-Si layer and the n+Si layer whereby the contact resistance against the forward current can be decreased leading to the increase of a quantity of an ON current.

摘要翻译： 在层叠多晶硅层和a-Si层的液晶显示装置中使用的底栅型薄膜晶体管中，可以增加流入薄膜晶体管的导通电流量。 按照多晶硅层和a-Si层的顺序，通过栅绝缘膜将多晶Si层和a-Si层层叠在作为有源层的栅电极上。 在a-Si层上形成n + Si层和源/漏层，从而形成薄膜晶体管。 在薄膜晶体管中流动的正向电流主要在多晶硅层中流动。 为了降低与多晶硅层和n + Si层之间的正向电流的接触电阻，a-Si层的边缘部分和多晶硅层的边缘部分呈现凹凸形状，因此特别增加了 多晶硅层和n + Si层之间的接触面积，由此可以减小与正向电流的接触电阻，导致导通电流的增加。

公开(公告)号：US20080151629A1

公开(公告)日：2008-06-26

申请号：US12020393

申请日：2008-01-25

申请人： Fumitoshi ITO ,  Yoshiyuki Kawashima ,  Takeshi Sakai ,  Yasushi Ishii ,  Yasuhiro Kanamaru ,  Takashi Hashimoto ,  Makoto Mizuno ,  Kousuke Okuyama ,  Yukiko Manabe

发明人： Fumitoshi ITO ,  Yoshiyuki Kawashima ,  Takeshi Sakai ,  Yasushi Ishii ,  Yasuhiro Kanamaru ,  Takashi Hashimoto ,  Makoto Mizuno ,  Kousuke Okuyama ,  Yukiko Manabe

IPC分类号： G11C11/40 ,  H01L29/788

CPC分类号： H01L27/11568 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/115 ,  H01L29/42344 ,  H01L29/66833 ,  H01L29/792

摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.

摘要翻译： 改善了具有非易失性存储元件的半导体器件的积分度和重写次数。 与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是 用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

公开(公告)号：US07371631B2

公开(公告)日：2008-05-13

申请号：US11168639

申请日：2005-06-29

申请人： Takeshi Sakai ,  Yasushi Ishii ,  Tsutomu Okazaki ,  Masaru Nakamichi ,  Toshikazu Matsui ,  Kyoya Nitta ,  Satoru Machida ,  Munekatsu Nakagawa ,  Yuichi Tsukada

发明人： Takeshi Sakai ,  Yasushi Ishii ,  Tsutomu Okazaki ,  Masaru Nakamichi ,  Toshikazu Matsui ,  Kyoya Nitta ,  Satoru Machida ,  Munekatsu Nakagawa ,  Yuichi Tsukada

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L21/823842 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823864 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11573

摘要： For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

摘要翻译： 为了增强具有MONOS型晶体管的非易失性半导体存储器件的高性能，非易失性半导体存储器件被提供有具有改进性能的MONOS型晶体管，其中MONOS非易失性存储器的存储单元包括控制 晶体管和存储晶体管。 控制晶体管的控制栅极包括n型多晶硅膜，并且形成在包括氧化硅膜的栅极绝缘膜上。 存储晶体管的存储栅极包括n型多晶硅膜，并设置在控制栅极的一个侧壁上。 存储器栅极包括具有低于控制栅极的薄层电阻的掺杂多晶硅膜，其包括通过将杂质离子注入未掺杂的硅膜形成的多晶硅膜。